Investigation of Chirped Well Structures for Broad-Spectrum AlGaInP-Based Light Emitting Diodes

2019 ◽  
Vol 19 (4) ◽  
pp. 2219-2223
Author(s):  
Hwa Sub Oh ◽  
Jong-Min Park ◽  
Sung Hoon Jung ◽  
Dong Wook Lee ◽  
Kang Seok Lee ◽  
...  
HortScience ◽  
2000 ◽  
Vol 35 (3) ◽  
pp. 425D-425
Author(s):  
Gregory D. Goins ◽  
Neil C. Yorio ◽  
Lynn V. Lewis

Various electric lamp sources have been proposed for growing plants in controlled environments. Although it is desirable for any light source to provide as much photosynthetically active radiation (PAR) as possible, light spectral quality is critical in regard to plant development and morphology. Light-emitting diodes (LEDs) and microwave lamps are promising light sources that have appealing features for applications in controlled environments. Light-emitting diodes can illuminate a narrow spectrum of light, which corresponds with absorption regions of chlorophyll. The sulfur-microwave lamp uses microwave energy to excite sulfur and argon, which produces a bright, continuous broad-spectrum white light. Compared to conventional broad-spectrum sources, the microwave lamp has higher electrical efficiency, and produces limited ultraviolet and infrared radiation. Experiments were conducted with spinach to test the feasibility of using LEDs and microwave lamps for spinach production in controlled environments. Growth and development comparisons were made during 28-day growth cycles with spinach grown under LED (at various red wavelengths), microwave, cool-white fluorescent, or high-pressure sodium lamps. Plant harvests were conducted at 14, 21, and 28 days after planting. At each harvest under all broad-spectrum light sources, spinach leaf growth and photosynthetic responses were similar. Major differences were observed in terms of specific leaf area and weight between spinach plants grown under 700 and 725 nm LEDs as compared to plants grown under shorter red wavelengths.


2021 ◽  
Vol 21 (7) ◽  
pp. 3824-3828
Author(s):  
Hwa Sub Oh ◽  
Jong-Min Park ◽  
Seong Hoon Jeong ◽  
Jun-Beom Park ◽  
Tak Jeong ◽  
...  

We studied broad-spectrum light emitting diodes appropriate for special lighting applications in terms of their optical behaviors and device performances according to the chirped multi-quantum well structures. As the well thickness from 1 st to 3rd well was changed from 6 nm to 15 nm and repeated three times, the electroluminescent spectrum was broadened by 65% and the light output power was increased by 8% in comparison to light emitting diodes having conventional multi-quantum well structures. In the case of the chirped multi-quantum well structures having sequentially decreasing the well thickness from 15 nm to 6 nm and repeating three times, the optical output power was decreased by 5% due to the carrier leakage out of the active region.


2000 ◽  
Vol 660 ◽  
Author(s):  
Thomas M. Brown ◽  
Ian S. Millard ◽  
David J. Lacey ◽  
Jeremy H. Burroughes ◽  
Richard H. Friend ◽  
...  

ABSTRACTThe semiconducting-polymer/injecting-electrode heterojunction plays a crucial part in the operation of organic solid state devices. In polymer light-emitting diodes (LEDs), a common fundamental structure employed is Indium-Tin-Oxide/Polymer/Al. However, in order to fabricate efficient devices, alterations to this basic structure have to be carried out. The insertion of thin layers, between the electrodes and the emitting polymer, has been shown to greatly enhance LED performance, although the physical mechanisms underlying this effect remain unclear. Here, we use electro-absorption measurements of the built-in potential to monitor shifts in the barrier height at the electrode/polymer interface. We demonstrate that the main advantage brought about by inter-layers, such as poly(ethylenedioxythiophene)/poly(styrene sulphonic acid) (PEDOT:PSS) at the anode and Ca, LiF and CsF at the cathode, is a marked reduction of the barrier to carrier injection. The electro- absorption results also correlate with the electroluminescent characteristics of the LEDs.


2003 ◽  
Vol 764 ◽  
Author(s):  
X. A. Cao ◽  
S. F. LeBoeuf ◽  
J. L. Garrett ◽  
A. Ebong ◽  
L. B. Rowland ◽  
...  

Absract:Temperature-dependent electroluminescence (EL) of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with peak emission energies ranging from 2.3 eV (green) to 3.3 eV (UV) has been studied over a wide temperature range (5-300 K). As the temperature is decreased from 300 K to 150 K, the EL intensity increases in all devices due to reduced nonradiative recombination and improved carrier confinement. However, LED operation at lower temperatures (150-5 K) is a strong function of In ratio in the active layer. For the green LEDs, emission intensity increases monotonically in the whole temperature range, while for the blue and UV LEDs, a remarkable decrease of the light output was observed, accompanied by a large redshift of the peak energy. The discrepancy can be attributed to various amounts of localization states caused by In composition fluctuation in the QW active regions. Based on a rate equation analysis, we find that the densities of the localized states in the green LEDs are more than two orders of magnitude higher than that in the UV LED. The large number of localized states in the green LEDs are crucial to maintain high-efficiency carrier capture at low temperatures.


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