Influence of an Annealing Temperature in a Vacuum Atmosphere on the Physical Properties of Indium Tin Oxide Nanorod Films

2020 ◽  
Vol 20 (8) ◽  
pp. 5006-5013
Author(s):  
Peerasil Charoenyuenyao ◽  
Nathaporn Promros ◽  
Rawiwan Chaleawpong ◽  
Pitoon Noymaliwan ◽  
Nattakorn Borwornpornmetee ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Annealing Temperature ◽  
Electron Beam Evaporation ◽  
Glancing Angle Deposition ◽  
Root Mean Square Roughness ◽  
X Ray Diffraction ◽  
Glancing Angle ◽  
Vacuum Atmosphere ◽  
Angle Deposition

In the present study, indium tin oxide (ITO) nanorod films were produced by usage of ion-assisted electron-beam evaporation with a glancing angle deposition technique. The as-produced ITO nanorod films were annealed in the temperature range of 100–500 °C for two hours in a vacuum atmosphere. The as-produced ITO nanorod films exhibited (222) and (611) preferred orientations from the X-ray diffraction pattern. After vacuum annealing at 500 °C, the ITO nanorod films demonstrated many preferred orientations and the improvement of film crystallinity. The sheet resistance of the as-produced ITO nanorod films was 11.92 Ω/ and was found to be 13.63 Ω/ by annealing at 500 °C. The as-produced and annealed ITO nanorod films had a rod diameter of around 80 nm and transmittance in a visible zone of around 90%. The root mean square roughness of the as-produced ITO nanorod film’s surface was 5.49 nm, which increased to 13.77 nm at an annealing temperature of 500 °C. The contact angle of the as-produced ITO nanorod films was 110.9° and increased to 116.5° after annealing at 500 °C.

Growth of Nanostructure TiO2 Films by Glancing Angle Deposition

2016 ◽  
Vol 675-676 ◽  
pp. 289-292 ◽  
Author(s):  
Theerayuth Plirdpring ◽  
Mati Horprathum ◽  
Pitak Eiamchai ◽  
Benjarong Samransuksamer ◽  
Chanunthorn Chananonnawathorn ◽  
...  
Keyword(s):  
Room Temperature ◽  
Rotation Speed ◽  
Electron Beam Evaporation ◽  
Glancing Angle Deposition ◽  
X Ray Diffraction ◽  
Sem Images ◽  
X Ray ◽  
Vapor Flux ◽  
Glancing Angle ◽  
Angle Deposition

Nanostructure TiO2 films were prepared by electron beam evaporation with glancing angle deposition technique at room temperature. The morphology, crystal structure and optical properties at various substrate rotation speeds (0-10 rpm) were investigated by field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD) and UV-vis spectrophotometer. The cross-section FE-SEM images illustrate that the nanostructures consist of different morphology: slanted columnar, spiral and vertical align nanorods at 0, 0.01 and 10 rpm-rotation speed, respectively. In particular, the rotation speed-controlled incoming vapor flux was found to play crucial role in the growth of nanostructure TiO2 films.

Indium tin oxide nanowhisker morphology control by vapour–liquid–solid glancing angle deposition

2012 ◽  
Vol 23 (10) ◽  
pp. 105608 ◽  
Author(s):  
A L Beaudry ◽  
R T Tucker ◽  
J M LaForge ◽  
M T Taschuk ◽  
M J Brett
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Morphology Control ◽  
Glancing Angle Deposition ◽  
Glancing Angle ◽  
Angle Deposition

Effect of Annealing on Morphology and Photoluminescence of WO3 Nanowires Deposited by Glancing Angle Deposition Techniques

2020 ◽  
Vol 20 (5) ◽  
pp. 3274-3282 ◽  
Author(s):  
Rajshree Rajkumari ◽  
Naorem Khelchand Singh
Keyword(s):  
Annealing Temperature ◽  
Blue Emission ◽  
Glancing Angle Deposition ◽  
Localized States ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
X Ray Diffraction ◽  
Glancing Angle ◽  
Vertically Aligned ◽  
Angle Deposition

In this article, vertically aligned WO3 nanowires were synthesized by employing the glancing angle deposition technique. The significant improvement in the crystallinity and surface morphology of the synthesized WO3 nanowires were observed for 500 °C annealed samples and beyond that temperature it starts degrading. The X-ray diffraction confirmed the different phase transition after annealing. Increase in crystallite size from 68.93 nm to 77.41 nm was observed with the increase in annealing temperature from 300 °C to 500 °C. Upon 250 nm excitation, a broad blue emission aroused by near band edge emission is observed. Also, other emission peaks were observed due to the localized states of oxygen vacancies in the conduction band of WO3. Fourier transform infrared result shows the bonding of WO3 nanowires and intensity were greatly enhanced as the annealing temperature increases up to 500 °C. These enhancements in the properties could be applicable for the development of WO3 based nanodevices.

Nanostructured indium tin oxide for application in optoelectronic devices

2007 ◽  
Vol 1056 ◽  
Author(s):  
S. P. Fernando ◽  
K. D. Harris ◽  
N. J. Gerein ◽  
M. J. Brett
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Vapour Deposition ◽  
Glancing Angle Deposition ◽  
Physical Vapour Deposition ◽  
Nanostructured Films ◽  
Glancing Angle ◽  
Planar Film ◽  
Electrical Resistivities ◽  
Angle Deposition

ABSTRACTThe electrical resistivities of nanostructured films of indium tin oxide were measured. The films were prepared using glancing angle deposition, a physical vapour deposition technique. This technique was used to prepare nanostructured indium tin oxide thin films of various morphologies. Films consisting of vertical posts were electrically characterized using a probing station. Compared to a normally evaporated planar film, the nanostructured films were found to exhibit resistivities approximately two orders of magnitude greater. Development of the measurement technique is ongoing, and several ideas for improvement are described.

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