Large-Area, Transparent, and Flexible Infrared Photodetector Fabricated Using P-N Junctions Formed by N-Doping Chemical Vapor Deposition Grown Graphene

A two-step, low-temperature thermal chemical vapor deposition (CVD) process, which uses camphor for synthesizing continuous graphene layer on Cu substrate is reported. The growth process was performed at lower temperature (800 °C) using camphor as the source of carbon. A threezone CVD system was used for controlled heating of precursor, in order to obtain uniform graphene layer. As-grown samples were characterized by X-ray diffraction (XRD), Raman spectroscopy and transmission electron microscopy (TEM). The results show the presence of 4–5 layers of graphene. As-grown graphene transferred onto a glass substrate through a polymer-free wet-etching process, demonstrated transmittance ~91% in visible spectra. This process of synthesizing large area, 4–5 layer graphene at reduced temperature represents an energy-efficient method of producing graphene for possible applications in opto-electronic industry.

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Molecular n-doping of chemical vapor deposition grown graphene

Journal of Materials Chemistry ◽

10.1039/c2jm32716c ◽

2012 ◽

Vol 22 (30) ◽

pp. 15168 ◽

Cited By ~ 45

Author(s):

Arun Kumar Singh ◽

Muhammad Waqas Iqbal ◽

Vivek Kumar Singh ◽

Muhammad Zahir Iqbal ◽

Jae Hong Lee ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

N Doping ◽

Grown Graphene

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Wetting behaviors and applications of metal-catalyzed CVD grown graphene

Journal of Materials Chemistry A ◽

10.1039/c8ta08325h ◽

2018 ◽

Vol 6 (45) ◽

pp. 22437-22464 ◽

Cited By ~ 10

Author(s):

Afzal Khan ◽

Mohammad Rezwan Habib ◽

Rishi Ranjan Kumar ◽

Sk Masiul Islam ◽

V. Arivazhagan ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Large Area ◽

High Quality ◽

Graphene Films ◽

Cvd Growth ◽

Grown Graphene ◽

Metal Catalyzed ◽

Wetting Behaviors

Metal-catalyzed chemical vapor deposition (CVD) growth of graphene is one of the most important techniques to produce high quality and large area graphene films.

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Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium

Nanoscale Research Letters ◽

10.1186/s11671-021-03505-2 ◽

2021 ◽

Vol 16 (1) ◽

Author(s):

Zhenzhen Tian ◽

Xiaoming Yuan ◽

Ziran Zhang ◽

Wuao Jia ◽

Jian Zhou ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Driving Force ◽

Chemical Vapor ◽

Chemical Vapor Deposition Method ◽

Nanowire Growth ◽

Calphad Approach ◽

Deposition Method ◽

Large Area ◽

Growth Phenomenon

AbstractGrowth of high-quality III–V nanowires at a low cost for optoelectronic and electronic applications is a long-term pursuit of research. Still, controlled synthesis of III–V nanowires using chemical vapor deposition method is challenge and lack theory guidance. Here, we show the growth of InP and GaP nanowires in a large area with a high density using a vacuum chemical vapor deposition method. It is revealed that high growth temperature is required to avoid oxide formation and increase the crystal purity of InP nanowires. Introduction of a small amount of Ga into the reactor leads to the formation of GaP nanowires instead of ternary InGaP nanowires. Thermodynamic calculation within the calculation of phase diagrams (CALPHAD) approach is applied to explain this novel growth phenomenon. Composition and driving force calculations of the solidification process demonstrate that only 1 at.% of Ga in the catalyst is enough to tune the nanowire formation from InP to GaP, since GaP nucleation shows a much larger driving force. The combined thermodynamic studies together with III–V nanowire growth studies provide an excellent example to guide the nanowire growth.

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