Cadmium Sulfide (CdS) Thin Films with Improved Morphology for Humidity Sensing by Chemical Bath Deposition at Lower pH

2021 ◽  
Vol 21 (12) ◽  
pp. 6035-6040
Author(s):  
Sucheta Sengupta ◽  
Avshish Kumar ◽  
V. K. Jain
Keyword(s):  
Thin Films ◽  
Cadmium Sulfide ◽  
Chemical Bath Deposition ◽  
Humidity Sensor ◽  
Complexing Agent ◽  
Cubic Phase ◽  
Detailed Characterization ◽  
Cds Thin Films ◽  
Prospective Application ◽  
Film Form

Cadmium sulfide (CdS), an II–VI group semiconductor material, is one of the most investigated semiconductors in thin film form. In this work, we synthesized CdS thin films with improved film morphology in the presence of ethylene diamine (EA) as the complexing agent by chemical bath deposition (CD) at lower pH. Detailed characterization reveals the presence of cubic phase CdS with a band gap of 2.39 eV with the resultant morphology significantly influenced by the composition of the growth solution. The resultant CdS films finds prospective application as a humidity sensor with a high sensor response of 2.61 corresponding to 80% relative humidity.

scholarly journals Cadmium Sulfide Thin Films Deposited onto MWCNT/Polysulfone Substrates by Chemical Bath Deposition

2016 ◽  
Vol 2016 ◽  
pp. 1-10 ◽  
Author(s):  
M. Moreno ◽  
G. M. Alonzo-Medina ◽  
A. I. Oliva ◽  
A. I. Oliva-Avilés
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Cadmium Sulfide ◽  
Chemical Bath Deposition ◽  
Multiwall Carbon Nanotubes ◽  
Low Concentrations ◽  
Average Grain Size ◽  
Cds Thin Films ◽  
Current Electric Field

Cadmium sulfide (CdS) thin films were deposited by chemical bath deposition (CBD) onto polymeric composites with electric field-aligned multiwall carbon nanotubes (MWCNTs). MWCNT/polysulfone composites were prepared by dispersing low concentrations of MWCNTs within dissolved polysulfone (PSF). An alternating current electric field was “in situ” applied to align the MWCNTs within the dissolved polymer along the field direction until the solvent was evaporated. 80 μm thick solid MWCNT/PSF composites with an electrical conductivity 13 orders of magnitude higher than the conductivity of the neat PSF were obtained. The MWCNT/PSF composites were subsequently used as flexible substrates for the deposition of CdS thin films by CBD. Transparent and adherent CdS thin films with an average thickness of 475 nm were obtained. The values of the energy band gap, average grain size, rms roughness, crystalline structure, and preferential orientation of the CdS films deposited onto the polymeric substrate were very similar to the corresponding values of the CdS deposited onto glass (conventional substrate). These results show that the MWCNT/PSF composites with electric field-tailored MWCNTs represent a suitable option to be used as flexible conducting substrate for CdS thin films, which represents an important step towards the developing of flexible systems for photovoltaic applications.

Highly selective and sensitive CdS thin film sensors for detection of NO2 gas

RSC Advances ◽  
2014 ◽  
Vol 4 (84) ◽  
pp. 44547-44554 ◽  
Author(s):  
S. T. Navale ◽  
A. T. Mane ◽  
M. A. Chougule ◽  
N. M. Shinde ◽  
JunHo Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Cadmium Sulfide ◽  
Chemical Bath Deposition ◽  
Chemical Bath Deposition Method ◽  
Deposition Method ◽  
Thin Film Sensors ◽  
Cds Thin Film ◽  
Cds Thin Films

We demonstrate the preparation of cadmium sulfide (CdS) thin films via a facile chemical bath deposition method.

Growth of CdS thin films on indium coated glass substrates via chemical bath deposition and subsequent air annealing

2014 ◽  
Vol 320 ◽  
pp. 309-314 ◽  
Author(s):  
Biswajit Ghosh ◽  
Kamlesh Kumar ◽  
Balwant Kr Singh ◽  
Pushan Banerjee ◽  
Subrata Das
Keyword(s):  
Thin Films ◽  
Chemical Bath Deposition ◽  
Coated Glass ◽  
Glass Substrates ◽  
Cds Thin Films

Optimal conditions of pH, composition, and temperature in synthesis of CdS thin films by chemical bath deposition technique

MRS Advances ◽  
2021 ◽  
Author(s):  
Y. Jiménez-Flores ◽  
J. Lefranc-Cabrera ◽  
P. D. Gómez-Barrales ◽  
J. A. Perez-Orozco ◽  
C. G. Flores-Hernández ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Bath Deposition ◽  
Optimal Conditions ◽  
Deposition Technique ◽  
Chemical Bath Deposition Technique ◽  
Cds Thin Films

scholarly journals Chemical Bath Deposition of Cd1−xZnxS as Buffer Layer in CIGS Solar Cell

2021 ◽  
Author(s):  
Yuming Xue ◽  
Xinyu Wang ◽  
Liming Zhang ◽  
Shipeng Zhang ◽  
Lang Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Buffer Layer ◽  
Chemical Bath Deposition ◽  
Deposition Rate ◽  
Lattice Mismatch ◽  
Solution Concentration ◽  
State Density ◽  
Cubic Phase ◽  
Cigs Solar Cell

Cd1-xZnxS thin films were deposited on glass substrates by chemical bath deposition (CBD). The effect of ZnSO4 solution concentration on the properties of the thin films was analyzed. The concentration of ZnSO4 solution affects the deposition rate of Cd1-xZnxS thin films. When the deposition rate is low, Cd1-xZnxS cubic crystal phase is formed. The surface morphology of hexagonal Cd1-xZnxS thin films is denser than that of cubic phase, the lattice mismatch rate of cubic phase Cd1-xZnxS thin films and CIGS is lower, only 0.56%, the interfacial state density is lower. SCAPS software was used to simulate the performance of the buffer layer, and the conversion efficiency of the cubic phase Cd1-xZnxS buffer layer in CIGS Solar Cell was up to 23.50%. Based on the EDS results, the function relationship between the contents of Zn2+ and Cd2+ in the films and the band gap content was deduced.

CHEMICAL BATH DEPOSITION: A PROMISING TECHNOLOGY TO BUILD LOW COST SOLAR CELLS

2001 ◽  
Vol 15 (17n19) ◽  
pp. 605-608 ◽  
Author(s):  
A. NUÑEZ ◽  
P. K. NAIR ◽  
M. T. S. NAIR
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Chemical Bath Deposition ◽  
Low Cost ◽  
Promising Technology ◽  
Cds Thin Films ◽  
P Type ◽  
Spectral Factor

Following the model of DeVos and Pauwels (1981), we calculated the spectral factor of efficiencies (η1) for n +-p or n +-i-p heterojunctions that can be formed by different thin absorber materials (p-type or intrinsic(i)) with n +-type CdS thin films produced by conversion of chemically deposited CdS thin films by doping with Cl or In as reported before. The materials with η1 comparable to that of CuInSe 2 (Eg, 1.01 eV: 57%) are AgBiS 2 (Eg, 0.9 eV: 56%), Cu 2 SnS 3 (Eg, 0.91 eV: 57%), PbSnS 3 (Eg, 1.05 eV: 57%), PbSbS 4 (Eg, 1.13 eV: 56%).

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