Noise and Schottky Barriers Effects in Carbon Nanotube Field Effect Transistor Performances and Its Application in Analog Circuit Design

2016 ◽  
Vol 11 (4) ◽  
pp. 416-424 ◽  
Author(s):  
Montassar Najari ◽  
Wafa Makni ◽  
Hekmet Samet ◽  
Othman Hakami
Keyword(s):  
Carbon Nanotube ◽  
Circuit Design ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Analog Circuit ◽  
Schottky Barriers ◽  
Analog Circuit Design ◽  
Effect Transistor

Imaging Schottky Barriers at Carbon Nanotube Contacts

2001 ◽  
Vol 706 ◽  
Author(s):  
Marcus Freitag ◽  
A. T. Johnson
Keyword(s):  
Carbon Nanotube ◽  
Schottky Barrier ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Schottky Barriers ◽  
Scanning Gate Microscopy ◽  
Gating Mechanism ◽  
Effect Transistor ◽  
Semiconducting Nanotubes

AbstractWe use scanning gate microscopy to precisely locate the gating response in single-wall nanotube devices. Junctions of metallic and semiconducting nanotubes show a dramatic increase in transport current when they are electrostatically doped with holes at the junction. We ascribe this behavior to the turn-on of a reverse biased Schottky barrier. A similar effect is seen in field-effect transistors made from an individual semiconducting single-wall carbon nanotube. In this case, there are two Schottky barriers at the metal contacts, one of which is forward, and one of which is reverse biased. The gating action is only observed at the reverse biased Schottky barrier at the positive electrode. By positioning the gate near one of the contacts, we convert the nanotube field-effect transistor into a rectifying nanotube diode. These experiments both clarify the gating mechanism for nanotube devices and indicate a strategy for diode fabrication based on controlled placement of acceptor impurities at a nanotube field-effect transistor.

scholarly journals Simple and rapid gas sensing using a single-walled carbon nanotube field-effect transistor-based logic inverter

2021 ◽  
Author(s):  
Salomé Forel ◽  
Leandro Sacco ◽  
Alice Castan ◽  
Ileana Florea ◽  
Costel Sorin Cojocaru
Keyword(s):  
Carbon Nanotube ◽  
Power Consumption ◽  
Data Processing ◽  
Gas Sensor ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Gas Sensing ◽  
Single Walled Carbon Nanotube ◽  
Effect Transistor ◽  
System Miniaturization

We design a gas sensor by combining two SWCNT-FET devices in an inverter configuration enabling a better system miniaturization together with a reduction of power consumption and ease of data processing.

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