Optical Properties of PMMA Composites Prepared by Extrusion Processing for Light Emitting Diode Light Diffuser Covers

2016 ◽  
Vol 8 (12) ◽  
pp. 2231-2235 ◽  
Author(s):  
So Youn Mun ◽  
Doo Hwan Kim ◽  
Hyung Mi Lim ◽  
Seong Joo Kim
Keyword(s):  
Optical Properties ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Extrusion Processing ◽  
Light Diffuser

OPTICAL PROPERTIES OF GaInN/GaN MULTI-QUANTUM WELL STRUCTURE AND LIGHT EMITTING DIODE GROWN BY METALORGANIC CHEMICAL VAPOR PHASE EPITAXY

2007 ◽  
Vol 17 (01) ◽  
pp. 81-84
Author(s):  
J. Senawiratne ◽  
M. Zhu ◽  
W. Zhao ◽  
Y. Xia ◽  
Y. Li ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Stark Effect ◽  
Light Emitting Diode ◽  
Chemical Vapor ◽  
Green Emission ◽  
Luminescence Spectroscopy ◽  
Light Emitting ◽  
Quantum Confined Stark Effect ◽  
Multi Quantum Well

Optical properties of green emission Ga 0.80 In 0.20 N/GaN multi-quantum well and light emitting diode have been investigated by using photoluminescence, cathodoluminescence, electroluminescence, and photoconductivity. The temperature dependent photoluminescence and cathodoluminescence studies show three emission bands including GaInN/GaN quantum well emission centered at 2.38 eV (~ 520 nm). The activation energy of the non-radiative recombination centers was found to be ~ 60 meV. The comparison of photoconductivity with luminescence spectroscopy revealed that optical properties of quantum well layers are strongly affected by the quantum-confined Stark effect.

scholarly journals Optical properties of Ga0.82In0.18N p-n homojunction blue-green light-emitting-diode grown by radio-frequency plasma-assisted molecular beam epitaxy

2015 ◽  
Vol 40 (2) ◽  
pp. 149-152
Author(s):  
Takeyoshi Onuma ◽  
Kento Narutani ◽  
Shuhei Fujioka ◽  
Tomohiro Yamaguchi ◽  
Ke Wang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Radio Frequency ◽  
Molecular Beam ◽  
Light Emitting Diode ◽  
Green Light ◽  
Radio Frequency Plasma ◽  
Light Emitting ◽  
Frequency Plasma

scholarly journals Optimization of surface-mount-device light-emitting diode packaging: investigation of effects of component optical properties on light extraction efficiency

2016 ◽  
Vol 55 (2) ◽  
pp. 025101 ◽  
Author(s):  
Tomoaki Kashiwao ◽  
Mayu Hiura ◽  
Yee Yan Lim ◽  
Alireza Bahadori ◽  
Kenji Ikeda ◽  
...  
Keyword(s):  
Optical Properties ◽  
Extraction Efficiency ◽  
Light Emitting Diode ◽  
Light Extraction ◽  
Light Extraction Efficiency ◽  
Light Emitting ◽  
Surface Mount

Structural and optical properties of semi-polar (11-22) InGaN/GaN green light-emitting diode structure

2018 ◽  
Vol 112 (5) ◽  
pp. 052105 ◽  
Author(s):  
Guijuan Zhao ◽  
Lianshan Wang ◽  
Huijie Li ◽  
Yulin Meng ◽  
Fangzheng Li ◽  
...  
Keyword(s):  
Optical Properties ◽  
Light Emitting Diode ◽  
Green Light ◽  
Diode Structure ◽  
Structural And Optical Properties ◽  
Light Emitting

The Effect of Needle Diameter on Optical Properties and Morphological Structure of La2O3- PVA Phosphor Nanofibers Prepared by Electrospinning Method

2020 ◽  
Vol 301 ◽  
pp. 18-26
Author(s):  
Hasma A. Wahab ◽  
Zainuriah Hassan ◽  
Naser Mahmoud Ahmed
Keyword(s):  
Optical Properties ◽  
Energy Gap ◽  
Uv Light ◽  
Light Emitting Diode ◽  
Morphological Structure ◽  
Average Diameter ◽  
X Ray Diffraction ◽  
Light Emitting ◽  
Electrospinning Method ◽  
Needle Diameter

Lanthanum Oxide-Polyvinyl alcohol (La2O3-PVA) phosphor nanofibers were prepared by electrospinning and investigation of the effect of needle diameter on the optical properties and morphological structure at the nanofibers was carried out. The average diameter of phosphor nanofibers have been evaluated for five different needle diameters. The resulting phosphor nanofibers were observed and anaylzed by X-ray diffraction (XRD), Field Emission Scanning Electron Microscope (FESEM), Ultraviolet-visible Spectroscopy (UV-Vis) and HPC-2 Lightsource Colorimeter. The La2O3-PVA phosphor nanofibers were used in light down-conversion of UV light (365 nm) for the white light-emitting diode (WLED) application. The chromaticity coordinates (CIE) and correlated colour temperature (CCT) were measured for different phosphor nanofibers with different sizes of needle diameter (0.45,0.55,0.65,0.75,1.1) mm. The results revealed that the phosphor nanofibers formed by needle diameter of 0.65 mm places macromolecule in a better order and the average diameter increase from 40.08 nm to 87.27 nm after annealing followed by increasing in atomic percentage of lanthanum. The energy gap of resulting phosphor nanofibers is 3.5365 eV. An optimum colour rendering index (CRI) value of 70.20 is obtained. The white phosphor exhibited CIE values of 0.3536, 0.407 and CCT of 4890 K.

MOCVD Growth of High Output Power Ingan Multiple Quantum Well Light Emitting Diode

1997 ◽  
Vol 468 ◽  
Author(s):  
P. Kozodoy ◽  
A. Abare ◽  
R. K. Sink ◽  
M. Mack ◽  
S. Keller ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Output Power ◽  
Light Emitting Diode ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
Light Emitting ◽  
Peak Emission Wavelength ◽  
Mocvd Growth

ABSTRACTThe MOCVD growth of InGaN / GaN multiple quantum well (MQW) structures for optoelectronic applications has been investigated. The structural and optical properties of the layers have been characterized by x-ray diffraction and photoluminescence. The effect of barrier and well dimensions on the optical properties have been examined; highest emission intensity and narrowest linewidth were obtained with thin wells (20–30 Å) and thick barriers (greater than 50 Å). By incorporating an MQW structure as the active region in a GaN p-n diode, high-brightness light emitting diodes (LEDs) have been produced. Under a forward current of 20 raA, these devices emit 2.2 mW of power corresponding to an external quantum efficiency of 4.5%. The emission spectrum peaks at 445 nm and exhibits a narrow linewidth of 28 nm. Under pulsed high current conditions, output power as high as 53 mW was realized and the peak emission wavelength shifted to 430 nm.

Optical Properties of InGaAsP Multiple Quantum Well Edge-Emitting Light-Emitting Diode

1994 ◽  
Vol 33 (Part 1, No. 12A) ◽  
pp. 6584-6585
Author(s):  
Yasumasa Kashima ◽  
Akio Matoba ◽  
Hiroshi Takano ◽  
Hisashi Kanie ◽  
Taizo Irie
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Light Emitting Diode ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Light Emitting

Structural and optical properties of Dy3+:YAlO3 phosphors for yellow light-emitting diode applications

2020 ◽  
Author(s):  
Yingshu Lian ◽  
Yan Wang ◽  
Jianfu Li ◽  
Zhaojie Zhu ◽  
Zhenyu You ◽  
...  
Keyword(s):  
Optical Properties ◽  
Light Emitting Diode ◽  
Structural And Optical Properties ◽  
Yellow Light ◽  
Light Emitting
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