Low Frequency Incremental Collector Output Resistance of a Bipolar Junction Transistor

1981 ◽  
Vol 18 (3) ◽  
pp. 257-265
Author(s):  
B. L. Hart
Keyword(s):  
Minority Carrier ◽  
Low Frequency ◽  
Base Region ◽  
Device Structure ◽  
Output Resistance ◽  
Bipolar Junction Transistor ◽  
Junction Transistor ◽  
Carrier Charge ◽  
Emitter Voltage

A basic consideration of the variation, with collector-emitter voltage, of the minority carrier charge in the emitter as well as the base region of a bipolar junction transistor facilitates a didactic treatment of the dependence of low frequency collector output resistance on aspects of device structure and modelling, and base-emitter circuit drive conditions.

scholarly journals Technique for measurement of the minority carrier mobility with a bipolar junction transistor

1997 ◽  
Vol 70 (4) ◽  
pp. 475-477 ◽  
Author(s):  
S. L. D’Souza ◽  
M. R. Melloch ◽  
M. S. Lundstrom ◽  
E. S. Harmon
Keyword(s):  
Carrier Mobility ◽  
Minority Carrier ◽  
Bipolar Junction Transistor ◽  
Junction Transistor ◽  
Minority Carrier Mobility

TCAD Model Calibration of High Voltage 4H-SiC Bipolar Junction Transistors

2019 ◽  
Vol 963 ◽  
pp. 670-673
Author(s):  
Daniel Johannesson ◽  
Muhammad Nawaz ◽  
Hans Peter Nee
Keyword(s):  
High Voltage ◽  
Model Calibration ◽  
Bipolar Junction Transistors ◽  
Device Structure ◽  
Bipolar Junction Transistor ◽  
Junction Transistor ◽  
Technology Cad ◽  
Tcad Simulation ◽  
Device Operation ◽  
Fine Tune

In this project, a Technology CAD (TCAD) model has been calibrated and verified against experimental data of a 15 kV silicon carbide (SiC) bipolar junction transistor (BJT). The device structure of the high voltage BJT has been implemented in the Synopsys Sentaurus TCAD simulation platform and design of experiment simulations have been performed to extract and fine-tune device parameters and 4H-SiC material parameters to accurately reflect the 15 kV SiC BJT experimental results. The set of calibrated TCAD parameters may serve as a base for further investigations of various SiC device design and device operation in electrical circuits.

scholarly journals Low-Voltage Low-Pass and Band-Pass Elliptic Filters Based on Log-Domain Approach Suitable for Biosensors

Sensors ◽  
2019 ◽  
Vol 19 (24) ◽  
pp. 5581
Author(s):  
Pipat Prommee ◽  
Natapong Wongprommoon ◽  
Montree Kumngern ◽  
Winai Jaikla
Keyword(s):  
Low Voltage ◽  
Random Noise ◽  
Low Frequency ◽  
Frequency Noise ◽  
Bipolar Junction Transistor ◽  
Low Pass ◽  
Junction Transistor ◽  
Band Pass ◽  
Electronically Tunable ◽  
Log Domain

This research proposes bipolar junction transistor (BJT)-based log-domain high-order elliptic ladder low-pass (LPF) and band-pass filters (BPF) using a lossless differentiator and lossless and lossy integrators. The log-domain lossless differentiator was realized by using seven BJTs and one grounded capacitor, the lossy integrator using five BJTs and one grounded capacitor, and the lossless integrator using seven BJTs and one grounded capacitor. The simplified signal flow graph (SFG) of the elliptic ladder LPF consisted of two lossy integrators, one lossless integrator, and one lossless differentiator, while that of the elliptic ladder BPF contained two lossy integrators, five lossless integrators, and one lossless differentiator. Log-domain cells were directly incorporated into the simplified SFGs. Simulations were carried out using PSpice with transistor array HFA3127. The proposed filters are operable in a low-voltage environment and are suitable for mobile equipment and further integration. The log-domain principle enables the frequency responses of the filters to be electronically tunable between 10k Hz–10 MHz. The proposed filters are applicable for low-frequency biosensors by reconfiguring certain capacitors. The filters can efficiently remove low-frequency noise and random noise in the electrocardiogram (ECG) signal.

NOISE CHARACTERISTICS OF InP-BASED HETEROSTRUCTURE BIPOLAR TRANSISTORS

1994 ◽  
Vol 05 (03) ◽  
pp. 395-410
Author(s):  
Y.K. CHEN ◽  
D.A. HUMPHREY ◽  
L. FAN ◽  
R.A. HAMM ◽  
D. SIVCO ◽  
...  
Keyword(s):  
High Frequency ◽  
Carrier Transport ◽  
Minority Carrier ◽  
Low Frequency ◽  
Microwave Frequency ◽  
Bipolar Transistors ◽  
Corner Frequency ◽  
Base Region ◽  
Noise Current ◽  
Noise Characteristics

The noise characteristics of InP -based heterostructure bipolar transistors (HBTs) are studied from low frequency to microwave frequency. The nonequilibrium minority carrier transport in the thin base region is very effective in reducing the 1/f noise current at low frequency as well as reducing the uncorrelated shot noise current at high frequency. Experimentally, a very low 1/f noise corner frequency of 1.55 kHz is obtained in AlInAs/InGaAs HBTs with a 70 nm-thick base. This is the lowest 1/f corner frequency amongst any compound semiconductor devices reported to date. Minimum noise figures of 0.46 dB, 2.0 dB and 3.33 dB are also demonstrated at 2 GHz, 10 GHz and 18 GHz, respectively, with InP/InGaAs HBTs with a 35 nm-thick base and 3.5×3.5 μ m 2 emitter.

scholarly journals Self-Consistent Solution of the Multi Band Boltzmann, Poisson and Hole-Continuity Equations

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 257-260
Author(s):  
Surinder P. Singh ◽  
Neil Goldsman ◽  
Isaak D. Mayergoyz
Keyword(s):  
Boltzmann Transport Equation ◽  
The Novel ◽  
Boltzmann Transport ◽  
One Dimensional ◽  
Bipolar Junction Transistor ◽  
Continuity Equations ◽  
The Poisson Equation ◽  
Curvilinear Grid ◽  
Consistent Solution ◽  
Junction Transistor

The Boltzmann transport equation (BTE) for multiple bands is solved by the spherical harmonic approach. The distribution function is obtained for energies greater than 3 eV. The BTE is solved self consistently with the Poisson equation for a one dimensional npn bipolar junction transistor (BJT). The novel features are: the use of boundary fitted curvilinear grid, and Scharfetter Gummel type discretization of the BTE.

Nano World: A Novel Path for Modern Drug Discovery

2014 ◽  
Vol 490-491 ◽  
pp. 123-128 ◽  
Author(s):  
Nishka Ranjan ◽  
A.H. Manjunatha Reddy
Keyword(s):  
Drug Discovery ◽  
Lipid Membranes ◽  
Biological Response ◽  
Circuit Element ◽  
Bipolar Junction Transistor ◽  
Modern Drug ◽  
Pegylated Nanoparticles ◽  
Traditional Drug ◽  
Junction Transistor ◽  
Self Differentiation

The last two decades have witnessed a plethora of novel biomaterials that work significantly in the discovery of drugs and the point check of drugs, Biosensors. PLGA (Poly-(L-Lactide-co-glycolic Acid)), has already been shown to be a substrate for manufacture of substrates for OFETs, that in the future would be the forefront of electroceuticals. But, Polylactic Acid (PLA) derived and pegylated nanoparticles generated scaffolds, promote neural self-differentiation, nanowires derived from Polythiophene (PTs) can be utilised in the area of biosensors. Similarly, PT derived PEDOT:PSS(poly (3,4-ethylenedioxythiophene) poly (styrenesulfonate) polymer doped with appropriate cations is useful to manipulate directly the biological response of cells on the same grounds, organic electrochemical transistors (OECTs) based on PEDOTPSS coupled with bilayer lipid membranes (BLMs) were shown to act as ion-to-electron converters. A solid-state ion bipolar junction transistor (IBJT) has been developed to serve as a circuit element for neurotransmitter signal delivery. Consequently, the traditional drug discovery methods have far gone by. This era demands a much more modified and multiple disciplined methods for modern drug discovery. This review gives an insight and instance of this paradigm.

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