TCAD Model Calibration of High Voltage 4H-SiC Bipolar Junction Transistors

2019 ◽  
Vol 963 ◽  
pp. 670-673
Author(s):  
Daniel Johannesson ◽  
Muhammad Nawaz ◽  
Hans Peter Nee
Keyword(s):  
High Voltage ◽  
Model Calibration ◽  
Bipolar Junction Transistors ◽  
Device Structure ◽  
Bipolar Junction Transistor ◽  
Junction Transistor ◽  
Technology Cad ◽  
Tcad Simulation ◽  
Device Operation ◽  
Fine Tune

In this project, a Technology CAD (TCAD) model has been calibrated and verified against experimental data of a 15 kV silicon carbide (SiC) bipolar junction transistor (BJT). The device structure of the high voltage BJT has been implemented in the Synopsys Sentaurus TCAD simulation platform and design of experiment simulations have been performed to extract and fine-tune device parameters and 4H-SiC material parameters to accurately reflect the 15 kV SiC BJT experimental results. The set of calibrated TCAD parameters may serve as a base for further investigations of various SiC device design and device operation in electrical circuits.

scholarly journals Effect of Gamma Radiation on Characteristic of bipolar junction Transistors (BJTs )

2021 ◽  
pp. 1-9
Author(s):  
Abdenabi Ali Elamin ◽  
Waell H Alawad
Keyword(s):  
Gamma Radiation ◽  
Power Supplies ◽  
Strong Increase ◽  
Bipolar Junction Transistors ◽  
Bipolar Junction Transistor ◽  
Before And After ◽  
Junction Transistor ◽  
The Individual ◽  
Silicon Transistor ◽  
Different Doses

This paper describes the effects of 60Cogamma radiation hardness of characteristic and parameters of Bipolar Junction Transistors in order to analyze the performance changes of the individual devices used in nuclear field. Bipolar Junction Transistor (BJT) of the type (BC-301) (npn) silicon, Transistor was irradiated by gamma radiation using 60Cosource at different doses (1, 2, 3, 4, and 5) KGy. The characteristics and parameter of Bipolar Junction Transistor was studied before and after irradiated by using Transistor Characteristics Apparatus with regulated power supplies. Obtained result showed that, the saturation voltage VCE(sat) of Bipolar Junction Transistor decreased because of the gain degradation of the transistor and increased silicon resistivity, Another parameter of a bipolar junction transistor affected by ionizing radiation is a collector-base leakage current, a strong increase of the current is caused by the build-up charge near the junction.

IV-Characteristics Measurement Error Resulting from Long Cables for Irradiated Bipolar Junction Transistors

2015 ◽  
Vol 1083 ◽  
pp. 185-189 ◽  
Author(s):  
Konstantin O. Petrosyants ◽  
Igor A. Kharitonov ◽  
Lev M. Sambursky ◽  
Maxim V. Kozhukhov
Keyword(s):  
Measurement Error ◽  
Bipolar Junction Transistors ◽  
Bipolar Junction Transistor ◽  
Wire Method ◽  
Junction Transistor

I-V-characteristics of an irradiated transistor in many cases should be measured inside the radiation chamber with long cables, which introduces noticeable measurement error. In this paper IV-characteristics of an irradiated bipolar junction transistor measured with the 4-wire and the 2-wire circuits are presented and compared to direct (without cables) measurements. Significant enlargement of measurement error for the 2-wire method in comparison with the 4-wire method is shown for different currents.

Fast switch-off of high voltage 4H–SiC npn bipolar junction transistor from deep saturation regime

2004 ◽  
Vol 48 (3) ◽  
pp. 491-493 ◽  
Author(s):  
Michael E. Levinshtein ◽  
Pavel A. Ivanov ◽  
Anant K. Agarwal ◽  
John W. Palmour
Keyword(s):  
High Voltage ◽  
Saturation Regime ◽  
Bipolar Junction Transistor ◽  
Junction Transistor

scholarly journals Ultra-High Sensitivity MEMS Pressure Sensor Utilizing Bipolar Junction Transistor for -1…+1 kPa

2021 ◽  
Author(s):  
Mikhail
Keyword(s):  
Circuit Design ◽  
Pressure Sensor ◽  
Feedback Loop ◽  
High Sensitivity ◽  
Electrical Circuit ◽  
Bipolar Junction Transistors ◽  
Chip Area ◽  
Bipolar Junction Transistor ◽  
Junction Transistor ◽  
Type V

The theoretical model and experimental characteristics of ultra-high sensitivity MEMS pressure sensor chip for 1 kPa utilizing a novel electrical circuit are presented. The electrical circuit uses piezosensitive differential amplifier with negative feedback loop (PDA-NFL) based on two bipolar-junction transistors (BJT). The BJT has a vertical structure of n-p-n type (V-NPN) formed on a non-deformable chip area. The circuit contains eight piezoresistors located on a profiled membrane in the areas of maximum mechanical stresses. The circuit design provides a balance between high pressure sensitivity (S =44.9 mV/V/kPa) and fairly low temperature coefficient of zero signal (TCZ = 0.094% FS/°C). Additionally, high membrane burst pressure of P = 550 kPa was reached.

scholarly journals Ultra-High Sensitivity MEMS Pressure Sensor Utilizing Bipolar Junction Transistor for -1…+1 kPa

2021 ◽  
Author(s):  
Mikhail Basov
Keyword(s):  
Circuit Design ◽  
Pressure Sensor ◽  
Feedback Loop ◽  
High Sensitivity ◽  
Electrical Circuit ◽  
Bipolar Junction Transistors ◽  
Chip Area ◽  
Bipolar Junction Transistor ◽  
Junction Transistor ◽  
Type V

The theoretical model and experimental characteristics of ultra-high sensitivity MEMS pressure sensor chip for the range of -1...+1 kPa utilizing a novel electrical circuit are presented. The electrical circuit uses piezosensitive differential amplifier with negative feedback loop (PDA-NFL) based on two bipolar-junction transistors (BJT). The BJT has a vertical structure of n-p-n type (V-NPN) formed on a non-deformable chip area. The circuit contains eight piezoresistors located on a profiled membrane in the areas of maximum mechanical stresses. The circuit design provides a balance between high pressure sensitivity (S = 44.9 mV/V/kPa) and fairly low temperature dependence of zero output signal (TCZ = 0.094% FS/°C). Additionally, high membrane burst pressure of P = 550 kPa was reached.

1000 V, 30 A SiC Bipolar Junction Transistors and Integrated Darlington Pairs

2005 ◽  
Vol 483-485 ◽  
pp. 901-904 ◽  
Author(s):  
Sumi Krishnaswami ◽  
Anant K. Agarwal ◽  
Craig Capell ◽  
Jim Richmond ◽  
Sei Hyung Ryu ◽  
...  
Keyword(s):  
Room Temperature ◽  
Voltage Drop ◽  
Active Area ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Collector Current ◽  
Bipolar Junction Transistor ◽  
Forward Voltage Drop ◽  
Junction Transistor ◽  
A Current

1000 V Bipolar Junction Transistor and integrated Darlington pairs with high current gain have been developed in 4H-SiC. The 3.38 mm x 3.38 mm BJT devices with an active area of 3 mm x 3 mm showed a forward on-current of 30 A, which corresponds to a current density of 333 A/cm2, at a forward voltage drop of 2 V. A common-emitter current gain of 40 was measured on these devices. A specific on-resistance of 6.0 mW-cm2 was observed at room temperature. The onresistance increases at higher temperatures, while the current gain decreases to 30 at 275°C. In addition, an integrated Darlington pair with an active area of 3 mm x 3 mm showed a collector current of 30 A at a forward drop of 4 V at room temperature. A current gain of 2400 was measured on these devices. A BVCEO of 1000 V was measured on both of these devices.

Low Frequency Incremental Collector Output Resistance of a Bipolar Junction Transistor

1981 ◽  
Vol 18 (3) ◽  
pp. 257-265
Author(s):  
B. L. Hart
Keyword(s):  
Minority Carrier ◽  
Low Frequency ◽  
Base Region ◽  
Device Structure ◽  
Output Resistance ◽  
Bipolar Junction Transistor ◽  
Junction Transistor ◽  
Carrier Charge ◽  
Emitter Voltage

A basic consideration of the variation, with collector-emitter voltage, of the minority carrier charge in the emitter as well as the base region of a bipolar junction transistor facilitates a didactic treatment of the dependence of low frequency collector output resistance on aspects of device structure and modelling, and base-emitter circuit drive conditions.

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