Screw dislocation pileups in a two-phase thin film

2022 ◽  
pp. 108128652110728
Author(s):  
Ping Yang ◽  
Xu Wang ◽  
Peter Schiavone

The method of continuously distributed dislocations is used to study the distribution of screw dislocations in a linear array piled up near the interface of a two-phase isotropic elastic thin film with equal thickness in each phase. The resulting singular integral equation is solved numerically using the Gauss–Chebyshev integration formula to arrive at the dislocation distribution function and the number of dislocations in the pileup.

1997 ◽  
Vol 473 ◽  
Author(s):  
H. S. Yang ◽  
F. R. Brotzen ◽  
D. L. Callahan ◽  
C. F. Dunn

ABSTRACTQuantitative measurement of the adhesion strength of thin film metallizations has been achieved by a novel technique employing electrostatic forces to generate delaminating stresses. This technique has been used in testing the adhesion of Al-Cu, Cu, and Al multilayer films deposited on Si. Micro-blister-type failure is revealed by scanning electron microscopy. The delamination process and the geometry of the blister are discussed. The measured adhesion data fit a Weibull distribution function.


Author(s):  
Hooman Hoornahad ◽  
Eduard A. B. Koenders

In this paper, the effect of the mix composition on rheological behavior of fresh cement-sand mixture is studied by considering a mixture as a two-phase model that is decomposed into a granular and a paste phase. The paste itself is subdivided into void paste and excess paste. Void paste fills the void space between the grains when they are in a fully compacted state while excess paste will use the remaining paste to form a paste layer around each individual grain particle, with equal thickness. By considering each grain particle covered with the excess paste layer as a single element, the rheological behavior of cement-sand mixtures can be related to their inter-element interactions for all sets of particle combinations.


1982 ◽  
Vol 53 (4) ◽  
pp. 3019-3023 ◽  
Author(s):  
S. N. G. Chu

2015 ◽  
Vol 28 (1) ◽  
pp. 77-84
Author(s):  
Mey de ◽  
Mariusz Felczak ◽  
Bogusław Więcek

Cooling of heat dissipating components has become an important topic in the last decades. Sometimes a simple solution is possible, such as placing the critical component closer to the fan outlet. On the other hand this component will heat the air which has to cool the other components further away from the fan outlet. If a substrate bearing a one dimensional array of heat dissipating components, is cooled by forced convection only, an integral equation relating temperature and power is obtained. The forced convection will be modelled by a simple analytical wake function. It will be demonstrated that the integral equation can be solved analytically using fractional calculus.


Coatings ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 759
Author(s):  
Luana Mazzarella ◽  
Anna Morales-Vilches ◽  
Lars Korte ◽  
Rutger Schlatmann ◽  
Bernd Stannowski

Doped hydrogenated nanocrystalline (nc-Si:H) and silicon oxide (nc-SiOx:H) materials grown by plasma-enhanced chemical vapor deposition have favourable optoelectronic properties originated from their two-phase structure. This unique combination of qualities, initially, led to the development of thin-film Si solar cells allowing the fabrication of multijunction devices by tailoring the material bandgap. Furthermore, nanocrystalline silicon films can offer a better carrier transport and field-effect passivation than amorphous Si layers could do, and this can improve the carrier selectivity in silicon heterojunction (SHJ) solar cells. The reduced parasitic absorption, due to the lower absorption coefficient of nc-SiOx:H films in the relevant spectral range, leads to potential gain in short circuit current. In this work, we report on development and applications of hydrogenated nanocrystalline silicon oxide (nc-SiOx:H) from material to device level. We address the potential benefits and the challenges for a successful integration in SHJ solar cells. Finally, we prove that nc-SiOx:H demonstrated clear advantages for maximizing the infrared response of c-Si bottom cells in combination with perovskite top cells.


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