scholarly journals Precise spectrophotometric method for semitransparent metallic thin-film index determination using interference enhancement

Author(s):  
Riley Shurvinton ◽  
Fabien Lemarchand ◽  
Antonin Moreau ◽  
Julien Lumeau

AbstractA precise spectrophotometric method to determine the refractive index of a semitransparent metallic thin film is presented. This method relies on interference enhancement of the measured spectra, employing an opaque substrate with a dielectric spacer layer beneath the absorbing layer of interest to create interference fringes.The resulting spectral oscillations of the stack are highly sensitive to the properties of the top absorbing layer, allowing precise determination of the refractive index via fitting. The performance of this method is verified using simulations in comparison to the typical method of depositing the absorbing thin film directly onto a transparent substrate. An experimental demonstration is made for titanium thin films over the visible range (370-835 nm). The refractive index of these films is extracted from experimental data using a combination of the Modified Drude and Forouhi-Bloomer models. This method showed high repeatability and precision, and is verified for Ti films between 6-70 nm thickness.

2021 ◽  
Author(s):  
Riley Shurvinton ◽  
Fabien Lemarchand ◽  
Antonin Moreau ◽  
Julien Lumeau

Abstract An accurate spectrophotometric method to determine the refractive index of a semitransparent metallic thin film is presented. This method relies on interference enhancement of the measured spectra, employing an opaque substrate with a dielectric spacer layer beneath the absorbing layer of interest to create interference fringes. The resulting spectral oscillations of the stack are highly sensitive to the properties of the top absorbing layer, allowing precise determination of the refractive index via fitting. The performance of this method is verified using simulations in comparison to the typical method of depositing the absorbing thin film directly onto a transparent substrate. An experimental demonstration is made for titanium thin films over the visible range (370-835 nm). The refractive index of these films is extracted from experimental data using a combination of the Modified Drude and Forouhi-Bloomer models. This method showed high repeatability and accuracy, and is verified for Ti films between 6-70 nm thickness.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Hosam Mekawey ◽  
Yehea Ismail ◽  
Mohamed Swillam

AbstractIn this work, for the first time, a study was conducted of the existence of Extraordinary Optical Transmission (EOT) in Silicon (Si) thin films with subwavelength holes array and high excess carrier concentration. Typically EOT is studied in opaque perforated metal films. Using Si would bring EOT and its many applications to the silicon photonics realm and the mid-IR range. Since Si thin film is a semi-transparent film in mid-IR, a generalization was proposed of the normalized transmission metric used in literature for EOT studies in opaque films. The plasma dispersion effect was introduced into the studied perforated Si film through either doping or carriers’ generation. Careful consideration for the differences in optical response modeling in both cases was given. Full-wave simulation and analysis showed an enhanced transmission when using Si with excess carriers, mimicking the enhancement reported in perforated metallic films. EOT was found in the mid-IR instead of the visible range which is the case in metallic films. The case of Si with generated excess carriers showed a mid-IR EOT peak reaching 157% around 6.68 µm, while the phosphorus-doped Si case showed a transmission enhancement of 152% around 8.6 µm. The effect of varying the holes’ dimensions and generated carriers’ concentration on the transmission was studied. The analogy of the relation between the fundamental mode cutoff and the EOT peak wavelength in the case of Si to the case of metal such as silver was studied and verified. The perforated Si thin film transmission sensitivity for a change in the refractive index of the holes and surroundings material was investigated. Also, a study of the device potential in sensing the hole and surroundings materials that have almost the same refractive index yet with different absorption fingerprints was performed as well.


Photonics ◽  
2020 ◽  
Vol 7 (4) ◽  
pp. 112
Author(s):  
Qais M. Al-Bataineh ◽  
Mahmoud Telfah ◽  
Ahmad A. Ahmad ◽  
Ahmad M. Alsaad ◽  
Issam A. Qattan ◽  
...  

We report the synthesis and characterization of pure ZnO, pure CeO2, and ZnO:CeO2 mixed oxide thin films dip-coated on glass substrates using a sol-gel technique. The structural properties of as-prepared thin film are investigated using the XRD technique. In particular, pure ZnO thin film is found to exhibit a hexagonal structure, while pure CeO2 thin film is found to exhibit a fluorite cubic structure. The diffraction patterns also show the formation of mixed oxide materials containing well-dispersed phases of semi-crystalline nature from both constituent oxides. Furthermore, optical properties of thin films are investigated by performing UV–Vis spectrophotometer measurements. In the visible region, transmittance of all investigated thin films attains values as high as 85%. Moreover, refractive index of pure ZnO film was found to exhibit values ranging between 1.57 and 1.85 while for CeO2 thin film, it exhibits values ranging between 1.73 and 2.25 as the wavelength of incident light decreases from 700 nm to 400 nm. Remarkably, refractive index of ZnO:CeO2 mixed oxide-thin films are tuned by controlling the concentration of CeO2 properly. Mixed oxide-thin films of controllable refractive indices constitute an important class of smart functional materials. We have also investigated the optoelectronic and dispersion properties of ZnO:CeO2 mixed oxide-thin films by employing well-established classical models. The melodramatic boost of optical and optoelectronic properties of ZnO:CeO2 mixed oxide thin films establish a strong ground to modify these properties in a skillful manner enabling their use as key potential candidates for the fabrication of scaled optoelectronic devices and thin film transistors.


2011 ◽  
Vol 46 (7) ◽  
pp. 639-649 ◽  
Author(s):  
E Le Bourhis ◽  
D Faurie ◽  
P O Renault ◽  
G Geandier ◽  
D Thiaudière ◽  
...  

2008 ◽  
Vol 2008 ◽  
pp. 1-5 ◽  
Author(s):  
Mohammad Hossein Habibi ◽  
Mohammad Khaledi Sardashti

Glass plate-supported nanostructure ZnO thin films were deposited by sol-gel spin coating. Films were preheated at275∘Cfor 10 minutes and annealed at 350, 450, and550∘Cfor 80 minutes. The ZnO thin films were transparent ca 80–90% in visible range and revealed that absorption edges at about 370 nm. Thec-axis orientation improves and the grain size increases which was indicated by an increase in intensity of the (002) peak at34.4∘in XRD corresponding to the hexagonal ZnO crystal. The photocatalytic degradation of X6G an anionic monoazo dye, in aqueous solutions, was investigated and the effects of some operational parameters such as the number of layer and reusability of ZnO nanostructure thin film were examined. The results showed that the five-layer coated glass surfaces have a very high photocatalytic performance.


Measurement ◽  
2021 ◽  
pp. 110287
Author(s):  
Nur Alia Sheh Omar ◽  
Ramli Irmawati ◽  
Yap Wing Fen ◽  
Ernee Noryana Muhamad ◽  
Faten Bashar Kamal Eddin ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document