Electron beam irradiation induced crystallization behavior of amorphous Ge2Sb2Te5 chalcogenide material
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AbstractThe crystallization of amorphous Ge2Sb2Te5 phase change material induced by electron beam irradiation was investigated by in-situ transmission electron microscopy (TEM). Amorphous matrix transformed into a partially crystalline state after being irradiated with a 200-keV electron beam for a long time. Real-time observation revealed that the crystallization of amorphous Ge2Sb2Te5 film occurs through a nucleation and growth mechanism under electron beam irradiation in TEM. While uncertainty from the 2D projection remains, the nuclei have been observed to grow preferentially along the < 100> direction.
2009 ◽
Vol 113
(13)
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pp. 5201-5205
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2005 ◽
Vol 20
(7)
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pp. 1785-1791
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