scholarly journals Residual Stress in Cr99Al1 Polycrystalline Thin Films

2018 ◽  
Vol 133 (3) ◽  
pp. 578-581
Author(s):  
Z.P. Mudau ◽  
C.J. Sheppard ◽  
A.R.E. Prinsloo ◽  
A.M. Venter ◽  
T.P. Ntsoane ◽  
...  
2002 ◽  
Vol 88 (15) ◽  
Author(s):  
E. Chason ◽  
B. W. Sheldon ◽  
L. B. Freund ◽  
J. A. Floro ◽  
S. J. Hearne

2021 ◽  
Vol 54 (5) ◽  
Author(s):  
Xiaodong Wang

A new grazing-incidence diffraction (GID) measurement geometry between in plane and out of plane is proposed. It is improved from the previous ω–φ compensated GID in side-inclination mode for measurement of residual stress in polycrystalline thin films [Wang & van Riessen (2017). Powder Diffr. 32, S9–S15]. Instead of keeping a constant azimuthal direction of the incident beam on the thin film sample, the current proposed variation maintains a constant azimuthal direction of the scattering vector projection on the thin film sample. The variation is named `ω–φ′ compensated GID in side-inclination mode' and enables d-spacing measurements along the same azimuthal direction. An Excel spreadsheet is included for readers to plan the measurement and to calculate the residual stress for the planned sample azimuthal direction. Anisotropic residual stresses of a polycrystalline NiFe thin film on an Si 001 substrate are measured by combining this method with phi rotations. Highly automated data analysis templates are developed using DIFFRAC.TOPAS v7 launch mode to calculate residual stress for all planned azimuthal directions sequentially. A pole figure file in simple text format is also generated from the same data set using DIFFRAC.TOPAS v7 launch mode, and can be directly imported into DIFFRAC.TEXTURE v4.1 for further texture analysis. Corrections for the incident-beam refraction have been implemented in both data analysis models.


Author(s):  
D J H Cockayne ◽  
D R McKenzie

The study of amorphous and polycrystalline materials by obtaining radial density functions G(r) from X-ray or neutron diffraction patterns is a well-developed technique. We have developed a method for carrying out the same technique using electron diffraction in a standard TEM. It has the advantage that studies can be made of thin films, and on regions of specimen too small for X-ray and neutron studies. As well, it can be used to obtain nearest neighbour distances and coordination numbers from the same region of specimen from which HREM, EDS and EELS data is obtained.The reduction of the scattered intensity I(s) (s = 2sinθ/λ ) to the radial density function, G(r), assumes single and elastic scattering. For good resolution in r, data must be collected to high s. Previous work in this field includes pioneering experiments by Grigson and by Graczyk and Moss. In our work, the electron diffraction pattern from an amorphous or polycrystalline thin film is scanned across the entrance aperture to a PEELS fitted to a conventional TEM, using a ramp applied to the post specimen scan coils. The elastically scattered intensity I(s) is obtained by selecting the elastically scattered electrons with the PEELS, and collecting directly into the MCA. Figure 1 shows examples of I(s) collected from two thin ZrN films, one polycrystalline and one amorphous, prepared by evaporation while under nitrogen ion bombardment.


2009 ◽  
Vol 113 (2) ◽  
pp. 976-983 ◽  
Author(s):  
Wonbong Jang ◽  
Jongchul Seo ◽  
Choonkeun Lee ◽  
Sang-Hyon Paek ◽  
Haksoo Han

1997 ◽  
Vol 296 (1-2) ◽  
pp. 114-117 ◽  
Author(s):  
O. Pesty ◽  
P. Canet ◽  
F. Lalande ◽  
H. Carchano ◽  
D. Lollman

2021 ◽  
Vol 23 (3) ◽  
pp. 2368-2376
Author(s):  
A. Di Trolio ◽  
A. Amore Bonapasta ◽  
C. Barone ◽  
A. Leo ◽  
G. Carapella ◽  
...  

Co doping increases the ZnO resistivity (ρ) at high T (HT), whereas it has an opposite effect at low T (LT). H balances the Co effects by neutralizing the ρ increase at HT and strengthening its decrease at LT.


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