scholarly journals Output Characteristics of a Thin-Film Piezoelectric AE Sensor for Magnetic Head-Disk Interaction

Author(s):  
Satomitsu IMAI ◽  
G.J. BURGER ◽  
T.S.J. LAMMERINK ◽  
J.H.J. FLUITMAN
1996 ◽  
Vol 62 (595) ◽  
pp. 928-935 ◽  
Author(s):  
Satomitsu IMAI ◽  
G. J. BURGER ◽  
T. S. J. LAMMERINK ◽  
J. H. J. FLUITMAN

2007 ◽  
Vol 62 (10-11) ◽  
pp. 609-619 ◽  
Author(s):  
Zivayi Chiguvare ◽  
Jürgen Parisi ◽  
Vladimir Dyakonov

The effects of thermal annealing on the bulk transport properties of poly(3-hexylthiophene) (P3HT) were studied by analyzing room temperature current-voltage characteristics of polymer thin films sandwiched between indium tin oxide/poly[ethylene dioxythiophene]:poly[styrene sulfonate] (ITO/PEDOT:PSS) and aluminum electrodes, before and after a thermal annealing step. It was observed that annealing takes place in two steps: (1) Dedoping of the polymer of impurities such as oxygen, remnant solvent, water, leading to a decrease in the conductivity of the film, and (2) thermally induced motion of the polymer chains leading to closer packing, thus, stronger inter-chain interaction and, consequently, increase in conductivity. It was also observed that the ITO/PEDOT:PSS/P3HT hole injection barrier increases on annealing the ITO/PEDOT:PSS/P3HT/Al thin film devices. The implications of impurity dedoping and closer packing on the output characteristics of bulk heterojunction polymer-fullerene thin film solar cells are discussed.


2017 ◽  
Vol 31 (35) ◽  
pp. 1750332
Author(s):  
Yu-Rong Liu ◽  
Jie Liu ◽  
Jia-Qi Song ◽  
Pui-To Lai ◽  
Ruo-He Yao

An amorphous indium–gallium–zinc–oxide (a-IGZO) thin-film transistor (TFT) with a planar split dual gate (PSDG) structure has been proposed, fabricated and characterized. Experimental results indicate that the two independent gates can provide dynamical control of device characteristics such as threshold voltage, sub-threshold swing, off-state current and saturation current. The transconductance extracted from the output characteristics of the device increases from [Formula: see text] to [Formula: see text] for a change of control gate voltage from −2 V to 2 V, and thus the device could be used in a variable-gain amplifier. A significant advantage of the PSDG structure is its flexibility in controlling the device performance according to the need of practical applications.


2000 ◽  
Vol 49 (11) ◽  
pp. 664-668
Author(s):  
Kenya Ohashi
Keyword(s):  

1985 ◽  
Vol 1 (6) ◽  
pp. 713-714
Author(s):  
T. Koshikawa ◽  
H. Kanai ◽  
A. Kakehi
Keyword(s):  

1988 ◽  
Vol 3 (9) ◽  
pp. 654-665
Author(s):  
Y. Ono ◽  
T. Kurosawa ◽  
Y. Hakamata ◽  
T. Sato

1990 ◽  
Vol 87 (4) ◽  
pp. 1836-1836
Author(s):  
Hirotsugu Fukuoka
Keyword(s):  

Author(s):  
H. Yoshimizu ◽  
W. Fujisawa ◽  
S. Orihara ◽  
K. Oguri

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