Surface Micro Modification of Machined Surfaces by Wide-Area Electron Beam (EB) Irradiation(Electrical machining)

AbstractA wide area disc shaped plasma source of 20cm in diameter generated by a ring shaped cathode electron beam is used to decompose Trimethylgallium (TMGa) and Trimethylarsenic (TMAs). Volume photo-absorption of VUV photons and sensitized atom-molecule collisions with excited species and radicals can all assist dissociation of the organometallic feedstock reactants. In addition, the excited radical flux and VUV impingement on the film may also assist heterogeneous surface reactions and increase surface mobility of absorbed species. Mass spectrometry studies using deuterium as a replacement for hydrogen as a trace gas allowed for the elicidation of decomposition pathways of TMGa and TMAs. Byproducts of hydrogen and helium plasmas were also studied.

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Titanium disilicide formation by wide‐area electron beam irradiation

Applied Physics Letters ◽

10.1063/1.95157 ◽

1984 ◽

Vol 45 (2) ◽

pp. 169-171 ◽

Cited By ~ 18

Author(s):

Cameron A. Moore ◽

J. J. Rocca ◽

G. J. Collins ◽

P. E. Russell ◽

J. D. Geller

Keyword(s):

Electron Beam ◽

Electron Beam Irradiation ◽

Wide Area ◽

Beam Irradiation ◽

Titanium Disilicide

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A Wide Area Electron Beam Scanner

IEEE Transactions on Nuclear Science ◽

10.1109/tns.1965.4323636 ◽

1965 ◽

Vol 12 (3) ◽

pp. 279-281

Author(s):

M. L. Rossi ◽

A. J. Favale ◽

F. R. Swanson ◽

F. J. Lotito

Keyword(s):

Electron Beam ◽

Wide Area

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Analysis of Heterogeneous Materials with X-Ray Microfujorescence and Microdiffraction

Advances in X-ray Analysis ◽

10.1154/s0376030800018231 ◽

1994 ◽

Vol 38 ◽

pp. 557-562

Author(s):

D. A. Carpenter ◽

A. Gorin ◽

J. T. Shor

Keyword(s):

Electron Beam ◽

Heterogeneous Materials ◽

Area Coverage ◽

Wide Area ◽

Specimen Preparation ◽

Phase Identification ◽

X Ray ◽

Good Element

The chemistry of heterogeneous materials can be understood only after determining the elements composing the material, the ways in which those elements combine, and the distribution of the resulting phases. The techniques of photon-induced x-ray microfluorescence (XRMF) and x-ray microdiffraction (XRMD) offer several advantages over conventional electron- beam methods for determinations of element and phase distributions. Those advantages include minimal specimen preparation, good element sensitivity, air operation, the capability of wide area coverage, and the availability of sophisticated search/match routines for phase identification.

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Techniques for Transmission Electron Microscopy of Fiber-Matrix Interfaces in Aluminum Alloy-Boron Composites by Ion Erosio

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100065079 ◽

1971 ◽

Vol 29 ◽

pp. 204-205

Author(s):

G. G. Shaw

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Aluminum Alloy ◽

Electron Beam ◽

Pure Aluminum ◽

Ion Milling ◽

Transmission Electron ◽

Fiber Matrix ◽

Ion Erosion ◽

Row Of Fibers

The morphology and composition of the fiber-matrix interface can best be studied by transmission electron microscopy and electron diffraction. For some composites satisfactory samples can be prepared by electropolishing. For others such as aluminum alloy-boron composites ion erosion is necessary.When one wishes to examine a specimen with the electron beam perpendicular to the fiber, preparation is as follows: A 1/8 in. disk is cut from the sample with a cylindrical tool by spark machining. Thin slices, 5 mils thick, containing one row of fibers, are then, spark-machined from the disk. After spark machining, the slice is carefully polished with diamond paste until the row of fibers is exposed on each side, as shown in Figure 1.In the case where examination is desired with the electron beam parallel to the fiber, preparation is as follows: Experimental composites are usually 50 mils or less in thickness so an auxiliary holder is necessary during ion milling and for easy transfer to the electron microscope. This holder is pure aluminum sheet, 3 mils thick.

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Temperature Dependence of the Critical Electron Dose for Fatty Acid Monolayers

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100053188 ◽

1982 ◽

Vol 40 ◽

pp. 78-79

Author(s):

Kenneth H. Downing ◽

Robert M. Glaeser

Keyword(s):

Electron Beam ◽

Fatty Acid ◽

Inelastic Scattering ◽

Temperature Dependence ◽

Structural Damage ◽

Direct Result ◽

Second Step ◽

Strong Temperature Dependence ◽

Electron Dose ◽

Covalent Bonds

The structural damage of molecules irradiated by electrons is generally considered to occur in two steps. The direct result of inelastic scattering events is the disruption of covalent bonds. Following changes in bond structure, movement of the constituent atoms produces permanent distortions of the molecules. Since at least the second step should show a strong temperature dependence, it was to be expected that cooling a specimen should extend its lifetime in the electron beam. This result has been found in a large number of experiments, but the degree to which cooling the specimen enhances its resistance to radiation damage has been found to vary widely with specimen types.

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Lithography below 100 nm

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100074367 ◽

1983 ◽

Vol 41 ◽

pp. 96-99

Author(s):

L. D. Jackel

Keyword(s):

Spatial Distribution ◽

Electron Beam ◽

Electron Scattering ◽

Electron Beam Lithography ◽

Substrate Material ◽

Local Electron ◽

Electron Dose ◽

Positive Resist ◽

Exposure Process

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.

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