J0402-1-5 Development of Elastic-Constant Measurement in THin Films at Low Temperatures Using Picosecond Laser Ultrasound Spectroscopy

2010 ◽  
Vol 2010.6 (0) ◽  
pp. 393-394
Author(s):  
Kenichi TANIGAKI ◽  
Tatsuya KUSUMOTO ◽  
Hirotsugu OGI ◽  
Nobutomo NAKAMURA ◽  
Masahiko HIRAO
2002 ◽  
Vol 404-407 ◽  
pp. 791-796
Author(s):  
Pascale Villain ◽  
Philippe Goudeau ◽  
Pierre Olivier Renault ◽  
K.F. Badawi

2009 ◽  
Vol 48 (7) ◽  
pp. 07GA01 ◽  
Author(s):  
Hirotsugu Ogi ◽  
Tomohiro Shagawa ◽  
Nobutomo Nakamura ◽  
Masahiko Hirao ◽  
Hidefumi Odaka ◽  
...  

2010 ◽  
Vol 49 (7) ◽  
pp. 07HB01 ◽  
Author(s):  
Kenichi Tanigaki ◽  
Tatsuya Kusumoto ◽  
Hirotsugu Ogi ◽  
Nobutomo Nakamura ◽  
Masahiko Hirao

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-1753-C8-1754
Author(s):  
H. Sakakima ◽  
M. Tessier ◽  
R. Krishnan ◽  
E. Hirota

2021 ◽  
Vol 27 (S1) ◽  
pp. 2660-2662
Author(s):  
David Elam ◽  
Eduardo Ortega ◽  
Andrey Chabanov ◽  
Arturo Ponce

1997 ◽  
Vol 12 (5) ◽  
pp. 1176-1178 ◽  
Author(s):  
A. T. Chien ◽  
J. S. Speck ◽  
F. F. Lange

Pb(ZrxTi1−x)O3 and PbZrO3 heteroepitaxial thin films were produced in an aqueous solution (10 M KOH) at ambient pressure and low temperatures (90–150 °C) on (001) SrTiO3 and LaAlO3 single crystal substrates. Growth of the Pb(ZrxTi1−x)O3 and PbZrO3 thin films initiates by the formation of {100} faceted islands. Energy dispersive spectroscopy (EDS) analysis of the Pb(ZrxTi1−x)O3 thin film shows that the Zr: Ti ratio is 45: 56, nearly identical to the molar ratio of the precursors. This route might provide a viable low temperature alternative for the formation of high dielectric constant thin films for applications such as dynamic random access memory (DRAM).


2011 ◽  
Vol 128 (3) ◽  
pp. 405-409 ◽  
Author(s):  
Huan Huang ◽  
Simian Li ◽  
Fengxiao Zhai ◽  
Yang Wang ◽  
Tianshu Lai ◽  
...  

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