Measurement of Elastic Constant and Refraction Index of Thin Films at Low Temperatures Using Picosecond Ultrasound

Pb(ZrxTi1−x)O3 and PbZrO3 heteroepitaxial thin films were produced in an aqueous solution (10 M KOH) at ambient pressure and low temperatures (90–150 °C) on (001) SrTiO3 and LaAlO3 single crystal substrates. Growth of the Pb(ZrxTi1−x)O3 and PbZrO3 thin films initiates by the formation of {100} faceted islands. Energy dispersive spectroscopy (EDS) analysis of the Pb(ZrxTi1−x)O3 thin film shows that the Zr: Ti ratio is 45: 56, nearly identical to the molar ratio of the precursors. This route might provide a viable low temperature alternative for the formation of high dielectric constant thin films for applications such as dynamic random access memory (DRAM).

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Synthesis of CuInSe2 thin films on flexible Ti foils via the hydrothermally-assisted chemical bath deposition process at low temperatures

Solar Energy Materials and Solar Cells ◽

10.1016/j.solmat.2012.12.019 ◽

2013 ◽

Vol 112 ◽

pp. 47-51 ◽

Cited By ~ 14

Author(s):

Chung-Hsien Wu ◽

Jeng-Shin Ma ◽

Shin-Hom Lin ◽

Chung-Hsin Lu

Keyword(s):

Thin Films ◽

Chemical Bath Deposition ◽

Low Temperatures ◽

Deposition Process

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Study of Transport Phenomenon in Amorphous RexSi1 – x Thin Films on the Both Sides of the Metal–Insulator Transition at Very Low Temperatures

Physics of the Solid State ◽

10.1134/s1063783420120215 ◽

2020 ◽

Vol 62 (12) ◽

pp. 2445-2451

Author(s):

A. El Oujdi ◽

S. Dlimi ◽

A. Echchelh ◽

A. El Kaaouachi

Keyword(s):

Thin Films ◽

Transport Phenomenon ◽

Low Temperatures ◽

Insulator Transition ◽

Metal Insulator Transition ◽

Metal Insulator

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Effect of surface condition on diffusion in thin films at low temperatures. Report No. 3026

10.2172/6700784 ◽

1978 ◽

Author(s):

J. C.M. Hwang ◽

P. S. Ho ◽

R. W. Balluffi

Keyword(s):

Thin Films ◽

Low Temperatures ◽

Surface Condition ◽

Effect Of Surface

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Oxygen Effect in Diamond Deposition at Low Temperatures

MRS Proceedings ◽

10.1557/proc-162-109 ◽

1989 ◽

Vol 162 ◽

Cited By ~ 2

Author(s):

Y. Liou ◽

A. Inspektor ◽

R. Weimer ◽

D. Knight ◽

R. Messier

Keyword(s):

Thin Films ◽

Low Temperatures ◽

Microwave Plasma ◽

Diamond Films ◽

Gas Mixtures ◽

Diamond Growth ◽

Oxygen Effect ◽

Gas Mixture ◽

Diamond Thin Films ◽

Deposited Films

ABSTRACTDiamond thin films were deposited on different substrates at low temperatures (lowest temperature∼ 300°C, estimated) in a microwave plasma enhanced chemical vapor deposition (MPCVD) system. The deposited films were amorphous carbon or diamond films depending on the different gas mixtures used. The growth rate of diamond thin films was decreased by adding oxygen to the gas mixture. The addition of oxygen to the gas mixtures was found to be important for diamond growth at low temperatures. Different concentrations of oxygen have been added into the gas mixture. Without oxygen, the deposited films were white soots and easily scratched off. Increasing the oxygen input improved the quality of the Raman peaks and increased the film transpancy. The diamond films were also characterized by scanning electron microscopy (SEM).

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