An idea of calculation for interior stress of material in continuum

2016 ◽  
Vol 2016 (0) ◽  
pp. GS-17
Author(s):  
Toshihide Sugawara
Keyword(s):  
Interior Stress

scholarly journals Interior-stress fields produced by a general axisymmetric punch

Friction ◽  
2021 ◽  
Author(s):  
Longxiang Yang ◽  
Zhanjiang Wang ◽  
Weiji Liu ◽  
Guocheng Zhang ◽  
Bei Peng
Keyword(s):  
Hankel Transform ◽  
Elastic Half Space ◽  
Stress Fields ◽  
Dual Integral Equations ◽  
Total Load ◽  
Interior Stress ◽  
Von Mises ◽  
Von Mises Stresses ◽  
Relationship Of ◽  
Analytical Expressions

AbstractThis work is a supplement to the work of Sneddon on axisymmetric Boussinesq problem in 1965 in which the distributions of interior-stress fields are derived here for a punch with general profile. A novel set of mathematical procedures is introduced to process the basic elastic solutions (obtained by the method of Hankel transform, which was pioneered by Sneddon) and the solution of the dual integral equations. These processes then enable us to not only derive the general relationship of indentation depth D and total load P that acts on the punch but also explicitly obtain the general analytical expressions of the stress fields beneath the surface of an isotropic elastic half-space. The usually known cases of punch profiles are reconsidered according to the general formulas derived in this study, and the deduced results are verified by comparing them with the classical results. Finally, these general formulas are also applied to evaluate the von Mises stresses for several new punch profiles.

scholarly journals On the Interior Stress Problem for Elastic Bodies

2000 ◽  
Vol 67 (4) ◽  
pp. 658-662 ◽  
Author(s):  
J. Helsing
Keyword(s):  
Integral Equation ◽  
Computational Domain ◽  
Original Formulation ◽  
Unknown Quantity ◽  
Numerical Examples ◽  
Stress Problem ◽  
Elastic Bodies ◽  
Interior Stress

The classic Sherman-Lauricella integral equation and an integral equation due to Muskhelishvili for the interior stress problem are modified. The modified formulations differ from the classic ones in several respects: Both modifications are based on uniqueness conditions with clear physical interpretations and, more importantly, they do not require the arbitrary placement of a point inside the computational domain. Furthermore, in the modified Muskhelishvili equation the unknown quantity, which is solved for, is simply related to the stress. In Muskhelishvili’s original formulation the unknown quantity is related to the displacement. Numerical examples demonstrate the greater stability of the modified schemes. [S0021-8936(00)01304-0]

Research of Strength of Rotor System about Containing Blade Crackle Based on Nonlinear Dynamics

2010 ◽  
Vol 44-47 ◽  
pp. 1158-1162
Author(s):  
Xiao Bo Liu ◽  
Kai Qin Li
Keyword(s):  
Nonlinear Dynamics ◽  
Stress Distribution ◽  
Rotor System ◽  
Ansys Software ◽  
Rotating Shaft ◽  
Alloy Material ◽  
Interior Stress ◽  
Nonlinear Dynamics Model ◽  
Nonlinear Dynamic Stability ◽  
Intensity Stress

As the condition of a certain blade cracked of rotor system of fans, limited short-axletree nonlinear dynamics model is used ,the vibration frequency and nonlinear dynamic stability single-disc rotor is discussed, interior stress distribution and size of rotating shaft after loaded is analyzed concretely by ANSYS software. Through contrast X, Y, X-Y three directions stress distribution of rotating shaft interior, for entity model of near support disc and shaft, it is observed that its field of stress distribution compare dense is near--support field，also stress concentration is relatively bigger after load is added. Meanwhile ANSYS software is used to calculate by simulation this relation of the blade cracking spread width-temporal of four different alloy material and to count the intensity、stress distributing and the axial displacement of the axletree. The best numerical value about elastic modulus and hardness of the material is found by analysis the curve of crackle width- time function.

S1602-1-1 Development of Measuring Method for Interior Stress of Roll under Winding

2009 ◽  
Vol 2009.5 (0) ◽  
pp. 187-188
Author(s):  
Tsubasa Sano ◽  
Shinya Suzuki ◽  
Makito NAKASONE ◽  
Toshimitu KANDA ◽  
Hiromu HASHIMOTO
Keyword(s):  
Measuring Method ◽  
Interior Stress

scholarly journals The influence of rounded edges on indentation by a flat punch

1998 ◽  
Vol 212 (4) ◽  
pp. 319-327 ◽  
Author(s):  
M Ciavarella ◽  
D A Hills ◽  
G Monno
Keyword(s):  
Contact Problem ◽  
Frictional Contact ◽  
Flat Surface ◽  
Fatigue Tests ◽  
Stress Fields ◽  
Partial Slip ◽  
Flat Punch ◽  
Present Solution ◽  
Interior Stress ◽  
Von Mises

The contact problem and stress state for indentation by a flat punch with rounded edges is studied. For the contact problem itself analytical solutions are obtained for both surface pressure and interior stress fields. Cases of normal indentation and frictional contact, the latter in both sliding or partial slip conditions, are all treated. The transition from the Hertzian configuration to the contact between a nominally flat pad and contacting flat surface is discussed, and it is found that the strength of the contact decays surprisingly slowly. Regarding the von Mises yield parameter, there is a range of configurations for which the strength is actually higher than the Hertzian one, and the strength decays only when the corner radii are very small. The present solution is therefore a realistic alternative to the classical rigid-flat punch idealization, and has particular application to fretting fatigue tests.

Characterization of defects in Si films on SiO2 layer

1990 ◽  
Vol 48 (4) ◽  
pp. 582-583
Author(s):  
Ansheng Liu ◽  
Beiling Shao ◽  
Jianming Yuan
Keyword(s):  
Integrated Circuits ◽  
Cross Section ◽  
Silicon Film ◽  
Scanning Speed ◽  
Zone Melting ◽  
Switching Speed ◽  
Process Region ◽  
Interior Stress ◽  
Si Films

SOI (Silicon-on-lnsulator) offers many advantages for integrated circuits including faster switching speed, high packing density, radiation resistance, and latch-up free. It can also be used in the integration of high voltage devices and/ or sensors. Defect-free Si films with a small interior stress are required for the application mentioned above. Therefore a heat-sink and a valley entrainment structure (Fig. 1) were made in order to confine defects to predetermined locations and to leave the other areas of the recrystallized silicon film defect-free.Using a cross—section specimen electron microscopy we have observed some kinds of defects in unseeded rapid zone-melting-recrystallized (RZMR) Si films which were prepared with a RF-induced graphite strip heater system. The scanning speed of the graphite strip heater is 11 mm / sec. Fig.2 shows a cross-section image of a valley structure specimen. Not any defect has been found in region A, which means that about 10μm wide defect-free Si film can be obtained by the process. Region C is an unpatterned normal area with a uniform thickness.The subgrain boundaries (SGBs) with an interval less than 6μm were observed in the region C.

Sign in / Sign up

Export Citation Format

Share Document