Ductile Mode Cutting of Single Crystal Silicon Using Ultrasonic Vibration

2000 ◽  
Vol 2000.2 (0) ◽  
pp. 189-190
Author(s):  
Shigeomi KOSHIMIZU ◽  
Hideyuki SUZUKI ◽  
Jiro OTSUKA
Author(s):  
Dae-Hee Choi ◽  
Je-Ryung Lee ◽  
Na-Ri Kang ◽  
Tae-Jin Je ◽  
Ju-Young Kim ◽  
...  

2011 ◽  
Vol 239-242 ◽  
pp. 3236-3239 ◽  
Author(s):  
Ying Chun Liang ◽  
Zhi Guo Wang ◽  
Ming Jun Chen ◽  
Jia Xuan Chen ◽  
Zhen Tong

Molecular dynamics simulations of the single crystal silicon nanoscale cutting with a diamond tool in ductile mode are carried out to investigate the adhesion phenomenon. After relaxation the silicon atoms on the surface reconstruct to make the potential decrease. The silicon atoms close to the diamond tool have the lowest potential (<-5.5 eV) and form a stable structure with surface atoms on the tool surface.


2007 ◽  
Vol 329 ◽  
pp. 433-438 ◽  
Author(s):  
Feng Wei Huo ◽  
Zhu Ji Jin ◽  
Fu Ling Zhao ◽  
Ren Ke Kang ◽  
Dong Ming Guo

Grinding of single crystal silicon may be achieved by two modes of material removal: ductile mode and brittle mode. Knowing of the brittle to ductile transition point at which the grinding process changes from the brittle mode to ductile mode is critically important for the realization of ductile mode grinding. This paper uses a new single grain diamond grinding method developed recently by the authors to investigate the brittle to ductile transition during grinding of single crystal silicon in all around. The results indicate that there exist four stages of brittle to ductile transition as the depth of cut is reduced: firstly, the surface cracks outside the grinding groove disappeared, secondlycracks on the bottom of the groove disappeared, then the lateral cracks ceased in the subsurface region, and finally the median crack is suppressed beneath the grooves. It is not until the depth of cut reaches the last transition point that a crack-free groove can be produced, therefore, the last transition stage is decisive. The critical depth of cut delineating the brittle to ductile transition point derived based on this criterion is 40 nanometers, which is much lower than that based on surface cracks.


2005 ◽  
Vol 128 (3) ◽  
pp. 723-729 ◽  
Author(s):  
Noritaka Kawasegi ◽  
Noboru Takano ◽  
Daisuke Oka ◽  
Noboru Morita ◽  
Shigeru Yamada ◽  
...  

This paper investigates nanomachining of single-crystal silicon using an atomic force microscope with a diamond-tip cantilever. To enable nanomachining of silicon, a nanomachining cantilever with a pyramidal diamond tip was developed using a combination of photolithography and hot-filament chemical vapor deposition. Nanomachining experiments on silicon using the cantilever are demonstrated under various machining parameters. The silicon surface can be removed with a rate of several tens to hundreds of nanometers in ductile mode, and the cantilever shows superior wear resistance. The experiments demonstrate successful nanomachining of single-crystal silicon.


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