scholarly journals Explainable machine learning for the analysis of transport phenomena in top-seeded solution growth of SiC single crystal

2021 ◽  
Vol 16 (1) ◽  
pp. JTST0009-JTST0009
Author(s):  
Yuto TAKEHARA ◽  
Atsushi SEKIMOTO ◽  
Yasunori OKANO ◽  
Toru UJIHARA ◽  
Sadik DOST
Keyword(s):  
Machine Learning ◽  
Single Crystal ◽  
Transport Phenomena ◽  
Solution Growth ◽  
Top Seeded Solution Growth

Growth of Large Diameter 4H-SiC by TSSG Technique

2013 ◽  
Vol 740-742 ◽  
pp. 65-68 ◽  
Author(s):  
Kazuhiko Kusunoki ◽  
N. Yashiro ◽  
Nobuhiro Okada ◽  
Kouji Moriguchi ◽  
Kazuhito Kamei ◽  
...  
Keyword(s):  
Growth Rate ◽  
Fluid Flow ◽  
Single Crystal ◽  
Large Diameter ◽  
High Growth ◽  
High Growth Rate ◽  
Solution Growth ◽  
Morphological Stability ◽  
Control Member ◽  
Top Seeded Solution Growth

4H-SiC single crystal with 3-inch diameter was grown by top seeded solution growth (TSSG) technique. We used a new convection control member called “Immersion Guide (IG)” which causes the high and homogenous fluid flow in the solution. As a result, we achieved relatively high growth rate and morphological stability

scholarly journals Flux Single Crystal Growth of BaFe12−xTixO19 with Titanium Gradient

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 264
Author(s):  
Vladimir E. Zhivulin ◽  
Evgeny A. Trofimov ◽  
Olga V. Zaitseva ◽  
Dmitry A. Zherebtsov ◽  
Danil A. Uchaev ◽  
...  
Keyword(s):  
Single Crystal ◽  
Barium Hexaferrite ◽  
Solution Growth ◽  
Controlled Cooling ◽  
Substitution Level ◽  
Growth Method ◽  
Ti Substitution ◽  
Relationship Of ◽  
Top Seeded Solution Growth ◽  
The Relationship

Titanium substituted barium hexaferrite BaFe12−xTixO19 single crystal was grown by the top seeded solution growth method from flux on the seed with controlled cooling below 1175 °C. Titanium substitution level gradient in the single crystal in the vertical and horizontal directions was studied. Two planes were cut and polished. A justification for the linear gradient of Ti substitution in a BaFe12−xTixO19 single crystal is proposed; substitution levels in the center and periphery were determined. It was shown that upon growth by the top seeded solution growth method, crystals with a linear Ti substitution level gradient from x = 0.73 to x = 0.77 for a distance of 11 mm along pulling direction were obtained. The study led to the conclusion about the relationship of the gradient and changes in the composition of the nutrient solution.

Top Seeded Solution Growth and Structural Characterizations of α-Quartz-like Structure GeO2 Single Crystal

2013 ◽  
Vol 13 (10) ◽  
pp. 4220-4225 ◽  
Author(s):  
Adrien Lignie ◽  
Bertrand Ménaert ◽  
Pascale Armand ◽  
Alexandra Peña ◽  
Jérôme Debray ◽  
...  
Keyword(s):  
Single Crystal ◽  
Solution Growth ◽  
Top Seeded Solution Growth ◽  
Structural Characterizations

scholarly journals High-quality K0.47Na0.53NbO3 single crystal toward high performance transducer

RSC Advances ◽  
2017 ◽  
Vol 7 (12) ◽  
pp. 7003-7007 ◽  
Author(s):  
Chengpeng Hu ◽  
Hao Tian ◽  
Xiangda Meng ◽  
Guang Shi ◽  
Wenwu Cao ◽  
...  
Keyword(s):  
Single Crystal ◽  
High Performance ◽  
Solution Growth ◽  
High Quality ◽  
High Quality Single Crystal ◽  
Growth Method ◽  
Top Seeded Solution Growth

A large-sized, high-quality single crystal of K0.47Na0.53NbO3 was grown by the top-seeded solution growth method.

Top-seeded solution growth and characterization of Raman crystal LiVMoO6

RSC Advances ◽  
2016 ◽  
Vol 6 (109) ◽  
pp. 107519-107524 ◽  
Author(s):  
Zheng Wang ◽  
Qian Wu ◽  
Min Zhu ◽  
Zeliang Gao ◽  
Xiangxin Tian ◽  
...  
Keyword(s):  
High Temperature ◽  
Single Crystal ◽  
Solution Growth ◽  
High Temperature Solution ◽  
Temperature Solution ◽  
Top Seeded Solution Growth ◽  
First Time

Single crystal LiVMoO6, with dimensions up to 20 mm × 15 mm × 12 mm, has been grown successfully for the first time from a high-temperature solution with MoO3 as a flux.

The Effect of Crucible Rotation and Crucible Size in Top-Seeded Solution Growth of Single-Crystal Silicon Carbide

2019 ◽  
Vol 54 (5) ◽  
pp. 1900014 ◽  
Author(s):  
Takashi Horiuchi ◽  
Lei Wang ◽  
Atsushi Sekimoto ◽  
Yasunori Okano ◽  
Takuya Yamamoto ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Solution Growth ◽  
Crystal Silicon ◽  
Crucible Rotation ◽  
Top Seeded Solution Growth
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