Impact of failure mode and effects analysis-based emergency management on the effectiveness of craniocerebral injury treatment

In its report pertaining to the performance of the Federal Emergency Management Agency (FEMA) during Hurricane Katrina, the US Senate recommended replacing FEMA with a bigger and better organization. Instead of replacing FEMA as a whole, an attempt should be made to scientifically identify and correct any significant gaps within the organizational and operational structure of FEMA based on FEMA’s current mission requirements under the National Response Plan. This article demonstrates the use of Failure Mode and Effect Analysis (FMEA) methodology for identification, analysis, measurement, and prioritization of the systemic root causes for FEMA’s inadequate mission performance during disasters of Katrina’s magnitude. The article also provides suggestions for the most effective corrective action models for the top five high-risk functions at FEMA identified and prioritized using FMEA.

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Analytical electron microscopy of grain boundaries in Al-Cu metallizations

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100133059 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1684-1685

Author(s):

J. R. Michael ◽

A. D. Romig ◽

D. R. Frear

Keyword(s):

Electron Microscopy ◽

Integrated Circuits ◽

Failure Mode ◽

Current Density ◽

Thermal History ◽

Analytical Electron Microscopy ◽

Cu Metallization ◽

Analytical Electron ◽

Interconnect Lines

Al with additions of Cu is commonly used as the conductor metallizations for integrated circuits, the Cu being added since it improves resistance to electromigration failure. As linewidths decrease to submicrometer dimensions, the current density carried by the interconnect increases dramatically and the probability of electromigration failure increases. To increase the robustness of the interconnect lines to this failure mode, an understanding of the mechanism by which Cu improves resistance to electromigration is needed. A number of theories have been proposed to account for role of Cu on electromigration behavior and many of the theories are dependent of the elemental Cu distribution in the interconnect line. However, there is an incomplete understanding of the distribution of Cu within the Al interconnect as a function of thermal history. In order to understand the role of Cu in reducing electromigration failures better, it is important to characterize the Cu distribution within the microstructure of the Al-Cu metallization.

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