Structural, electrical and optical properties of spray deposited V2O5 thin films on glass substrates

Ti doped ITO (ITO:Ti) thin films were fabricated on glass substrates by RF magnetron sputtering using only one piece of ITO:Ti ceramic target at different substrate temperature (Ts). The effect of substrate temperature on structural, electrical, and optical properties of the films was investigated. It is confirmed that the resistivity of the films decreases with the increase of Ts till the minimum value of 2.5×10-4 Ω•cm and the transmittance in visible wavelengths is higher than 90%. "Blue shift" and "red shift" of UV absorption edge of the film were observed when Ts200 °CHeaders and footers

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Effect of thermal annealing on electrical and optical properties of Ba-doped SrCu2 O2 thin films on glass substrates

physica status solidi (a) ◽

10.1002/pssa.201330011 ◽

2013 ◽

Vol 210 (12) ◽

pp. 2569-2574 ◽

Cited By ~ 4

Author(s):

Afzal Khan ◽

Carmen Jiménez ◽

Odette Chaix-Pluchery ◽

Hervé Roussel ◽

Jean-Luc Deschanvres

Keyword(s):

Thin Films ◽

Optical Properties ◽

Thermal Annealing ◽

Electrical And Optical Properties ◽

Glass Substrates

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Electrical and Optical Properties of ZnO-Doped Zr0.8Sn0.2TiO4 Thin Films on ITO/Glass Substrates by RF Magnetron Sputtering

Materials Science Forum ◽

10.4028/www.scientific.net/msf.687.70 ◽

2011 ◽

Vol 687 ◽

pp. 70-74

Author(s):

Cheng Hsing Hsu ◽

His Wen Yang ◽

Jenn Sen Lin

Keyword(s):

Thin Films ◽

Optical Properties ◽

Magnetron Sputtering ◽

Substrate Temperature ◽

Visible Region ◽

Rf Magnetron Sputtering ◽

Rf Power ◽

Electrical And Optical Properties ◽

Glass Substrates ◽

Ito Glass

Electrical and optical properties of 1wt% ZnO-doped (Zr0.8Sn0.2)TiO4thin films prepared by rf magnetron sputtering on ITO/Glass substrates at different rf power and substrate temperature were investigated. The surface structural and morphological characteristics analyzed by X-ray diffraction (XRD) and atomic force microscope (AFM) were found to be sensitive to the deposition conditions, such as rf power and substrate temperature. The selected-area diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. All films exhibited ZST (111) orientation perpendicular to the substrate surface and the grain size as well as the deposition rate of the film increased with the increase in both the rf power and the substrate temperature. Optical transmittance spectroscopy further revealed high transparency (over 60%) in the visible region of the spectrum.

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Effects of Rapid Thermal Process on the Microstructural, Electrical and Optical Properties of AZO Thin Films

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.441.11 ◽

2013 ◽

Vol 441 ◽

pp. 11-14

Author(s):

Rong Bin Liu ◽

Kai Liang Zhang ◽

Yu Jie Yuan ◽

Fang Wang ◽

Juan Xu

Keyword(s):

Thin Films ◽

Optical Properties ◽

Thermal Processing ◽

Rf Magnetron Sputtering ◽

Processing Temperature ◽

Rapid Thermal Process ◽

Electrical And Optical Properties ◽

Pure Nitrogen ◽

Glass Substrates ◽

Deposited Films

In this paper, Al-doped ZnO thin films were deposited on glass substrates by RF magnetron sputtering and subsequently rapid thermal processing was executed under temperature range from 300°C to 600°C in order to investigate the microstructure, electrical, and optical properties of AZO films. XRD and AFM microscopy results showed that all the samples were of poly-crystalline and the grain size became larger with the increasing processing temperature. Compared with the sample as-deposited, it was shown that resistivity decreased from 1.9×10-2 to 1.48×10-3Ωcm and carrier concentration increased from 1.48×1020 to 5.59×1020 cm3 when the sample was processed at 600°C in pure nitrogen for 1 min. The highest transmittance of the samples processed at 500°C improves to 90.35% compared with the as-deposited films (68.2% ) as the wavelength varied between 400 and 900 nm.

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Influence of film thickness on texture and electrical and optical properties of room temperature deposited nanocrystalline V2O5 thin films

Journal of Applied Physics ◽

10.1063/1.2844438 ◽

2008 ◽

Vol 103 (4) ◽

pp. 043507 ◽

Cited By ~ 46

Author(s):

Preetam Singh ◽

Davinder Kaur

Keyword(s):

Thin Films ◽

Optical Properties ◽

Film Thickness ◽

Room Temperature ◽

Electrical And Optical Properties ◽

V2o5 Thin Films

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Effects of Annealing on the Structural and Optical Properties of V2O5 Thin Films Prepared by RF Sputtering for Humidity Sensor Application

Iraqi Journal of Science ◽

10.24996/ijs.2021.62.10.12 ◽

2021 ◽

pp. 3536-3544

Author(s):

Bakr F. Hassan ◽

Mohammed J. Dathan ◽

Anas A. Abdallah

Keyword(s):

Thin Films ◽

Optical Properties ◽

Annealing Temperature ◽

Energy Gap ◽

Rf Sputtering ◽

Rf Magnetron Sputtering ◽

Xrd Analysis ◽

Structural And Optical Properties ◽

Glass Substrates ◽

V2o5 Thin Films

In this work, vanadium pentoxide (V2O5) thin films were prepared using rf magnetron sputtering on silicon wafer and glass substrates from V2O5 target at 200 °C substrate temperature, followed by annealing at 400 and 500 °C in air for 2 h. The prepared thin films were examined by X-ray diffraction (XRD), forier transform infra-red spectroscopy (FTIR), UV-visible absorbance, and direct current coductivity to study the effects of annealing temperature on their structural and optical properties. The XRD analysis exhibited that the annealing promoted the highly crystallized V2O5 phase that is highly orientated along the c direction. The crystalline size increased from 22.5 nm to 35.4 nm with increasing the annealing temperature to 500 °C. The FTIR spectroscopy showed the enhancement of the characteristics band for the V2O5 with increasing annealing temperature to 500 °C. The optical study showed that the energy gap for the sample deposited on glass slides decreased from 2.85 eV, for as deposited sample, to 2.6 eV upon annealing the sample to 500 °C. There was a linear dependence between sensitivity and relative humidity (RH) at the range from 25% to 70%, while the behavior was exponential at high RH range.

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Effect of Oxygen Partial Pressure on the Electrical and Optical Properties of DC Magnetron Sputtered AmorphousTiO2Films

Journal of Spectroscopy ◽

10.1155/2013/462734 ◽

2013 ◽

Vol 2013 ◽

pp. 1-7 ◽

Cited By ~ 7

Author(s):

M. Chandra Sekhar ◽

P. Kondaiah ◽

B. Radha Krishna ◽

S. Uthanna

Keyword(s):

Thin Films ◽

Optical Properties ◽

Oxygen Partial Pressure ◽

Partial Pressure ◽

Optical Transmittance ◽

Electrical And Optical Properties ◽

Glass Substrates ◽

Schottky Effect ◽

Partial Pressures ◽

Effect Of Oxygen

Titanium dioxide (TiO2) thin films were deposited on p-Si (100) and Corning glass substrates held at room temperature by DC magnetron sputtering at different oxygen partial pressures in the range9×10−3–9×10−2 Pa. The influence of oxygen partial pressure on the structural, electrical, and optical properties of the deposited films was systematically studied. XPS studies confirmed that the film formed at an oxygen partial pressure of6×10−2 Pa was nearly stoichiometric. TiO2films formed at all oxygen partial pressures were X-ray amorphous. The optical transmittance gradually increased and the absorption edge shifted towards shorter wavelengths with the increase of oxygen partial pressure. Thin film capacitors with configuration of Al/TiO2/p-Si have been fabricated. The results showed that the leakage current density of films formed decreased with the increase of oxygen partial pressure to6×10−2Pa owing to the decrease in the oxygen defects in the films thereafter it was increased. The current transport mechanism in the TiO2thin films is shown to be Schottky effect and Fowler-Nordheim tunnelling currents.

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