How to exploit ion-induced stress relaxation to grow thick c-BN films

A recently developed procedure is reviewed allowing thick (>1 mm), high-quality c-BN films (>80 % c-BN) to be grown. It is based on the observation that compressive stress inevitably present in such films can be released by medium-energy (some hundred keV) ion irradiation without destroying the cubic phase.

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Ion-irradiation induced stress relaxation in metallic thin films and multilayers grown by ion beam sputtering

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/j.nimb.2005.08.046 ◽

2006 ◽

Vol 242 (1-2) ◽

pp. 461-465 ◽

Cited By ~ 9

Author(s):

A. Debelle ◽

A. Michel ◽

G. Abadias ◽

C. Jaouen

Keyword(s):

Thin Films ◽

Stress Relaxation ◽

Ion Irradiation ◽

Ion Beam ◽

Metallic Thin Films ◽

Ion Beam Sputtering ◽

Induced Stress ◽

Beam Sputtering

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Structural and Elastic Response of Mo/Ni Multilayers to Ion Irradiation

MRS Proceedings ◽

10.1557/proc-615-g8.7.1 ◽

2000 ◽

Vol 615 ◽

Cited By ~ 1

Author(s):

Jérôme Pacaud ◽

Franck Martin ◽

Anny Michel ◽

Christiane Jaouen ◽

Philippe Djemia ◽

...

Keyword(s):

Light Scattering ◽

Stress Relaxation ◽

Ion Irradiation ◽

Growth Direction ◽

Interplanar Distance ◽

Elastic Response ◽

X Ray Diffraction ◽

X Ray ◽

Induced Stress ◽

Before And After

ABSTRACTMo/Ni multilayers are investigated by x-ray diffraction and Brillouin light scattering before and after ion induced stress relaxation and mixing. Study of the evolution of interplanar distances in both layers as a function of the period exhibits a strong anomaly of the Mo (110) distance (in the growth direction) that can be correlated with the elastic anomaly. The very low interplanar distance in the molybdenum layers found after stress relaxation seems to favor an explanation of this behavior based on the diffusion of Ni in the Mo layers during the growth.

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Temperature dependent change in equilibrium elastic modulus after thermally induced stress relaxation in porcine septal cartilage

Lasers in Surgery and Medicine ◽

10.1002/lsm.20611 ◽

2008 ◽

Vol 40 (3) ◽

pp. 202-210 ◽

Cited By ~ 15

Author(s):

Dmitriy E. Protsenko ◽

Allison Zemek ◽

Brian J.F. Wong

Keyword(s):

Elastic Modulus ◽

Stress Relaxation ◽

Septal Cartilage ◽

Temperature Dependent ◽

Thermally Induced ◽

Induced Stress ◽

Dependent Change

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Irradiation-induced stress relaxation of Eurofer97 steel

Journal of Nuclear Materials ◽

10.1016/j.jnucmat.2010.12.263 ◽

2011 ◽

Vol 417 (1-3) ◽

pp. 104-107 ◽

Cited By ~ 3

Author(s):

N.V. Luzginova ◽

M. Jong ◽

J.W. Rensman ◽

J.B.J. Hegeman ◽

J.G. van der Laan

Keyword(s):

Stress Relaxation ◽

Induced Stress

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Cubic InGaN Grown by MOCVD

MRS Internet Journal of Nitride Semiconductor Research ◽

10.1557/s1092578300002520 ◽

1999 ◽

Vol 4 (S1) ◽

pp. 239-243

Author(s):

J.B. Li ◽

Hui Yang ◽

L.X. Zheng ◽

D.P. Xu ◽

Y.T. Wang

Keyword(s):

Room Temperature ◽

Emission Peak ◽

Buffer Layers ◽

Cubic Phase ◽

Yellow Luminescence ◽

X Ray Diffraction ◽

High Quality ◽

X Ray ◽

Cubic Gan ◽

Pl Emission

We report on the growth of high-quality cubic phase InGaN on GaAs by MOCVD. The cubic InGaN layers are grown on cubic GaN buffer layers on GaAs (001) substrates. The surface morphology of the films are mirror-like. The cubic nature of the InGaN films is obtained by X-ray diffraction (XRD) measurements. The InGaN layers show strong photoluminescence (PL) at room temperature. Neither emission peak from wurtzite GaN nor yellow luminescence is observed in our films. The highest In content as determined by XRD is about 17% with an PL emission wavelength of 450 nm. The FWHM of the cubic InGaN PL peak are 153 meV and 216 meV for 427 nm and 450 nm emissions, respectively. It is found that the In compositions determined from XRD are not in agreement with those estimated from PL measurements. The reasons for this disagreement are discussed.

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