Room Temperature Planar Absolute Radiometer for High-Accuracy Optical Power Measurements

2021 ◽  
Author(s):  
Anna K. Vaskuri ◽  
Michelle S. Stephens ◽  
Nathan A. Tomlin ◽  
Matthew T. Spidell ◽  
Christopher S. Yung ◽  
...  
Keyword(s):  
Room Temperature ◽  
Optical Power ◽  
High Accuracy ◽  
Power Measurements

scholarly journals Hybrid POF/VLC Links Based on a Single LED for Indoor Communications

Photonics ◽  
2021 ◽  
Vol 8 (7) ◽  
pp. 254
Author(s):  
Juan Andrés Apolo ◽  
Beatriz Ortega ◽  
Vicenç Almenar
Keyword(s):  
Optical Power ◽  
Industrial Applications ◽  
Free Space Optics ◽  
Polymer Optical Fiber ◽  
Hybrid Fiber ◽  
Modulation Formats ◽  
Space Optics ◽  
Indoor Communications ◽  
Power Measurements ◽  
Good Agreement

A hybrid fiber/wireless link based on a single visible LED and free of opto-electronic intermediate conversion stages has been demonstrated for indoor communications. This paper shows the main guidelines for proper coupling in fiber/air/detector interfaces. Experimental demonstration has validated the design results with very good agreement between geometrical optics simulation and received optical power measurements. Different signal bandwidths and modulation formats, i.e., QPSK, 16-QAM, and 64-QAM, have been transmitted over 1.5 m polymer optical fiber (POF) and 1.5 m free-space optics (FSO). Throughputs up to 294 Mb/s using a 64-QAM signal have been demonstrated using a commercial LED, which paves the way for massive deployment in industrial applications.

High Temperature High Current Gain IC Compatible 4H-SiC Phototransistor

2019 ◽  
Vol 963 ◽  
pp. 832-836 ◽  
Author(s):  
Shuo Ben Hou ◽  
Per Erik Hellström ◽  
Carl Mikael Zetterling ◽  
Mikael Östling
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Room Temperature ◽  
Uv Light ◽  
Optical Power ◽  
Current Gain ◽  
High Current ◽  
Promising Candidate ◽  
Forward Current ◽  
On Chip

This paper presents our in-house fabricated 4H-SiC n-p-n phototransistors. The wafer mapping of the phototransistor on two wafers shows a mean maximum forward current gain (βFmax) of 100 at 25 °C. The phototransistor with the highest βFmax of 113 has been characterized from room temperature to 500 °C. βFmax drops to 51 at 400 °C and remains the same at 500 °C. The photocurrent gain of the phototransistor is 3.9 at 25 °C and increases to 14 at 500 °C under the 365 nm UV light with the optical power of 0.31 mW. The processing of the phototransistor is same to our 4H-SiC-based bipolar integrated circuits, so it is a promising candidate for 4H-SiC opto-electronics on-chip integration.

scholarly journals Compositional Dependence of Structural Properties of Prepared Alloys and Films

2011 ◽  
Vol 2011 ◽  
pp. 1-6
Author(s):  
M. F. A. Alias ◽  
A. A. J. Al-Douri ◽  
E. M. N. Al-Fawadi ◽  
A. A. Alnajjar
Keyword(s):  
Room Temperature ◽  
Thermal Evaporation ◽  
High Accuracy ◽  
Compositional Dependence ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Glass Substrates ◽  
Different Temperatures ◽  
Good Agreement

Results of a study of alloys and films with various Pb content have been reported and discussed. Films of of thickness 1.5 μm have been deposited on glass substrates by flash thermal evaporation method at room temperature, under vacuum at constant deposition rate. These films were annealed under vacuum around 10−6Torr at different temperatures up to 523 K. The composition of the elements in alloys was determined by standard surfaces techniques such as atomic absorption spectroscopy (AAS) and X-ray fluorescence (XRF), and the results were found of high accuracy and in very good agreement with the theoretical values. The structure for alloys and films is determined by using X-ray diffraction. This measurement reveals that the structure is polycrystalline with cubic structure and there are strong peaks at the direction (200) and (111). The effect of heat treatment on the crystalline orientation, relative intensity, and grain size of films is presented.

A primary standard of optical power based on induced-junction silicon photodiodes operated at room temperature

Metrologia ◽  
2014 ◽  
Vol 51 (3) ◽  
pp. 197-202 ◽  
Author(s):  
Timo Dönsberg ◽  
Meelis Sildoja ◽  
Farshid Manoocheri ◽  
Mikko Merimaa ◽  
Leo Petroff ◽  
...  
Keyword(s):  
Room Temperature ◽  
Primary Standard ◽  
Optical Power

Accurate Bit Error Ratio Monitor by Spectral Filtering and Optical Power Measurements

2014 ◽  
Author(s):  
Shoichiro Oda ◽  
Tomohiro Yamauchi ◽  
Jeng-Yuan Yang ◽  
Youichi Akasaka ◽  
Olga Vassilieva ◽  
...  
Keyword(s):  
Optical Power ◽  
Spectral Filtering ◽  
Error Ratio ◽  
Bit Error Ratio ◽  
Power Measurements

scholarly journals Квантовые каскадные лазеры с длиной волны излучения 4.8 mum, работающие при комнатной температуре

2018 ◽  
Vol 44 (18) ◽  
pp. 17
Author(s):  
В.В. Мамутин ◽  
А.П. Васильев ◽  
А.В. Лютецкий ◽  
Н.Д. Ильинская ◽  
А.А. Усикова ◽  
...  
Keyword(s):  
Indium Phosphide ◽  
Room Temperature ◽  
Molecular Beam ◽  
High Accuracy ◽  
High Quality ◽  
Quantum Cascade ◽  
Laser Heterostructures ◽  
Inp Substrate ◽  
Lattice Matched

AbstractWe report on room-temperature generation at the 4.8-μm wavelength in a lattice-matched structure of a quantum cascade laser (QCL) grown on indium phosphide (InP) substrate. Laser heterostructures grown by molecular beam epitaxy (MBE) comprised 30 cascades and were designed to generate at the 4.80 μm wavelength corresponding to an atmospheric transparency window. Experiments demonstrated effective lasing at temperatures from 80 to 300 K on a wavelength coinciding with the calculated value, which confirmed the high quality of interfaces, high precision of layer thicknesses, and high accuracy of active region doping.

scholarly journals Мощные квантово-каскадные лазеры с длиной волны генерации 8 μm

2019 ◽  
Vol 45 (14) ◽  
pp. 48
Author(s):  
А.В. Бабичев ◽  
В.В. Дюделев ◽  
А.Г. Гладышев ◽  
Д.А. Михайлов ◽  
А.С. Курочкин ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Cascade Laser ◽  
Room Temperature ◽  
Molecular Beam ◽  
Optical Power ◽  
Output Optical Power ◽  
Quantum Cascade ◽  
Fabry Perot ◽  
Cleaved Facets ◽  
Lattice Matched

The heterostructure of a quantum-cascade laser based on In0.53Ga0.47As/Al0.48In0.52As heteropair lattice matched with the InP was grown by molecular beam epitaxy. InP layers was used to form the optical waveguide. Room temperature lasing in the spectral range of 8 μm in the standard ridge geometry of a Fabry-Perot cavity formed by cleaved facets with peak output optical power of 0.45 W was obtained.

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