scholarly journals Ultra-thin and near-unity selective emitter for efficient cooling

2021 ◽  
Vol 29 (20) ◽  
pp. 31364
Author(s):  
Do Hyeon Kim ◽  
Gil Ju Lee ◽  
Se-Yeon Heo ◽  
Soomin Son ◽  
Kyeong Muk Kang ◽  
...  
Keyword(s):  
Selective Emitter

Potential for Passive Radiative Cooling by PDMS Selective Emitters

2017 ◽  
Author(s):  
Braden Czapla ◽  
Arvind Srinivasan ◽  
Qingtian Yin ◽  
Arvind Narayanaswamy
Keyword(s):  
Thin Films ◽  
Ambient Temperature ◽  
Passive Cooling ◽  
Radiative Cooling ◽  
Polydimethyl Siloxane ◽  
Selective Emitter ◽  
The Cost ◽  
Aluminum Substrates ◽  
Selective Emitters ◽  
Fabrication Costs

The scalability and implementation of selective emitters in passive radiative cooling applications are limited by the high fabrication costs due to the complexity of these structures. The usage of commercially available polymers in selective emitters holds potential in lowering the cost of radiative cooling solutions. In this work, we demonstrate that thin films of polydimethyl-siloxane (PDMS) on aluminum substrates act as radiative coolers by selectively emitting in the wavelength range of 8 μm to 13 μm, where the Earth’s atmosphere is highly transparent. We also show that our device can achieve passive cooling up to 12 °C below the ambient temperature under the night sky. This suggests that PDMS, especially due to its ease of deposition, may be a viable selective emitter in passive radiative cooling applications.

scholarly journals Combined selective emitter and filter for high performance incandescent lighting

2017 ◽  
Vol 111 (9) ◽  
pp. 094103 ◽  
Author(s):  
Arny Leroy ◽  
Bikram Bhatia ◽  
Kyle Wilke ◽  
Ognjen Ilic ◽  
Marin Soljačić ◽  
...  
Keyword(s):  
High Performance ◽  
Selective Emitter

Implanted selective emitter solar cells by laser thermal annealing

2012 ◽  
Author(s):  
Adeline Lanterne ◽  
Sylvain Manuel ◽  
Bertrand Paviet-Salomon ◽  
Samuel Gall ◽  
Aurélie Tauzin
Keyword(s):  
Solar Cells ◽  
Thermal Annealing ◽  
Selective Emitter

scholarly journals Effects of Laser Doping on the Formation of the Selective Emitter of a c-Si Solar Cell

2020 ◽  
Vol 10 (13) ◽  
pp. 4554
Author(s):  
Jeong Eun Park ◽  
Won Seok Choi ◽  
Jae Joon Jang ◽  
Eun Ji Bae ◽  
Donggun Lim
Keyword(s):  
Laser Fluence ◽  
Contact Resistivity ◽  
Process Conditions ◽  
Laser Doping ◽  
Selective Emitter ◽  
Melting Phenomenon ◽  
Irregular Structure ◽  
Si Solar Cell ◽  
Additional Processing ◽  
By Products

Laser doping, though able to improve cell characteristics, enables the formation of a selective emitter without the need for additional processing. Its parameters should be investigated to minimize laser defects, such as the heat-affected zone (HAZ), and to obtain a low contact resistance. Herein, the laser fluence and speed were changed to optimize process conditions. Under a laser fluence of 1.77 J/cm2 or more, the surface deteriorated due to the formation of the HAZ during the formation of the laser doping selective emitter (LDSE). The HAZ prevented the formation of the LDSE and impaired cell characteristics. Therefore, the laser speeds were changed from 10 to 70 mm/s. The lowest contact resistivity of 1.8 mΩ·cm2 was obtained under a laser fluence and speed of 1.29 J/cm2 and 10 mm/s, respectively. However, the surface had an irregular structure due to the melting phenomenon, and many by-products were formed. This may have degraded the efficiency due to the increased contact reflectivity. Thus, we obtained the lowest contact resistivity of 3.42 mΩ·cm2, and the damage was minimized under the laser fluence and speed of 1.29 J/cm2 and 40 mm/s, respectively.

scholarly journals Synthesis of Phosphorus Solution for n+ Si Selective Emitter Solar Cell by Spin on Doping

2019 ◽  
Vol 122 ◽  
pp. 02006
Author(s):  
Thipwan Fangsuwannarak ◽  
Supanut Laohawiroj ◽  
Kamonchanok Mekmork
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Volume Ratio ◽  
Suitable Condition ◽  
Process Step ◽  
Selective Emitter ◽  
Selective Area ◽  
High Efficiency Solar Cells ◽  
Diffusion Temperature ◽  
Potential Benefits

A strong requirement in manufacturing of high-efficiency solar cells is its cost reduction. One approach of aim is to merge several steps of n+ Si selective emitter processing into one step without degrading the performance of solar cells. By varying the doping level in the selective area, intrinsic fields can be built into solar cells with potential benefits long recognized. In this paper, the spin-on doping (SOD) method was used for the purpose of important tasks, different phosphorus diffusion to form n+ Si selective area consisting of the lightly and heavily doping emitter areas with 35 Ω/sheet and 121 Ω/sheet. The main solution containing different concentrations of phosphorus doped-SOD source was synthesized in this work. The sheet-resistance dependence of n-Si emitter layers on the concentration of phosphorus acid in the SOD solution was studied in term of the volume ration of TEOS: H3PO4, as well as the thermal diffusion temperature. The suitable condition for forming n+ Si selective emitters in one process step is 1000°C diffusion temperature for 30 minutes with the complementary SOD volume ratio of 4:1 and 2:1. SOD solution can be patterned by a screen printing or an inkjet printing.

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