scholarly journals Effects of Laser Doping on the Formation of the Selective Emitter of a c-Si Solar Cell

2020 ◽  
Vol 10 (13) ◽  
pp. 4554
Author(s):  
Jeong Eun Park ◽  
Won Seok Choi ◽  
Jae Joon Jang ◽  
Eun Ji Bae ◽  
Donggun Lim
Keyword(s):  
Laser Fluence ◽  
Contact Resistivity ◽  
Process Conditions ◽  
Laser Doping ◽  
Selective Emitter ◽  
Melting Phenomenon ◽  
Irregular Structure ◽  
Si Solar Cell ◽  
Additional Processing ◽  
By Products

Laser doping, though able to improve cell characteristics, enables the formation of a selective emitter without the need for additional processing. Its parameters should be investigated to minimize laser defects, such as the heat-affected zone (HAZ), and to obtain a low contact resistance. Herein, the laser fluence and speed were changed to optimize process conditions. Under a laser fluence of 1.77 J/cm2 or more, the surface deteriorated due to the formation of the HAZ during the formation of the laser doping selective emitter (LDSE). The HAZ prevented the formation of the LDSE and impaired cell characteristics. Therefore, the laser speeds were changed from 10 to 70 mm/s. The lowest contact resistivity of 1.8 mΩ·cm2 was obtained under a laser fluence and speed of 1.29 J/cm2 and 10 mm/s, respectively. However, the surface had an irregular structure due to the melting phenomenon, and many by-products were formed. This may have degraded the efficiency due to the increased contact reflectivity. Thus, we obtained the lowest contact resistivity of 3.42 mΩ·cm2, and the damage was minimized under the laser fluence and speed of 1.29 J/cm2 and 40 mm/s, respectively.

scholarly journals Effect of Process Parameters on Catalytic Incineration of Solvent Emissions

2008 ◽  
Vol 2008 ◽  
pp. 1-7 ◽  
Author(s):  
Satu Ojala ◽  
Ulla Lassi ◽  
Paavo Perämäki ◽  
Riitta L. Keiski
Keyword(s):  
Laboratory Experiments ◽  
Butyl Acetate ◽  
Space Velocity ◽  
Optimal Operation ◽  
Process Conditions ◽  
Statistical Experimental Design ◽  
Operation Conditions ◽  
A Minor ◽  
Increasing Temperature ◽  
By Products

Catalytic oxidation is a feasible and affordable technology for solvent emission abatement. However, finding optimal operation conditions is important, since they are strongly dependent on the application area of VOC incineration. This paper presents the results of the laboratory experiments concerning four most central parameters, that is, effects of concentration, gas hourly space velocity (GHSV), temperature, and moisture on the oxidation of n-butyl acetate. Both fresh and industrially aged commercial Pt/Al2O3catalysts were tested to determine optimal process conditions and the significance order and level of selected parameters. The effects of these parameters were evaluated by computer-aided statistical experimental design. According to the results, GHSV was the most dominant parameter in the oxidation of n-butyl acetate. Decreasing GHSV and increasing temperature increased the conversion of n-butyl acetate. The interaction effect of GHSV and temperature was more significant than the effect of concentration. Both of these affected the reaction by increasing the conversion of n-butyl acetate. Moisture had only a minor decreasing effect on the conversion, but it also decreased slightly the formation of by products. Ageing did not change the significance order of the above-mentioned parameters, however, the effects of individual parameters increased slightly as a function of ageing.

High-Concentration, Low-Temperature, and Low-Cost Excimer Laser Doping for 4H-SiC Power Device Fabrication

2019 ◽  
Vol 963 ◽  
pp. 403-406
Author(s):  
Kaname Imokawa ◽  
Toshifumi Kikuchi ◽  
Kento Okamoto ◽  
Daisuke Nakamura ◽  
Akihiro Ikeda ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Low Cost ◽  
Device Fabrication ◽  
Contact Resistivity ◽  
Power Devices ◽  
High Concentration ◽  
Laser Doping ◽  
Krf Excimer Laser ◽  
Al Thin Film

We developed a novel KrF excimer laser doping system for 4H-SiC power devices, and demonstrated laser doping of 4H-SiC with Al thin film deposited on the surface. As seen from the results of the Al depth profile, high concentration implantation (~ 1021 cm-3 at the surface) of Al was achieved by laser ablation of the Al thin film. A high, built-in-potential (~3.5 V) of the pn junction diode was clearly seen in the I-V curve. In addition, the contact resistivity of the deposited Al/Ti electrodes on the surface was 1.9 × 10−4 Ωcm2 by TLM (Transmission Line Model). It was confirmed that a high concentration of Al doping and low contact resistivity were achieved by the KrF excimer laser doping system.

scholarly journals A Novel Method to Achieve Selective Emitter Using Surface Morphology for PERC Silicon Solar Cells

Energies ◽  
2020 ◽  
Vol 13 (19) ◽  
pp. 5207
Author(s):  
Minkyu Ju ◽  
Jeongeun Park ◽  
Young Hyun Cho ◽  
Youngkuk Kim ◽  
Donggun Lim ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Sheet Resistance ◽  
Conversion Efficiency ◽  
Single Step ◽  
Process Conditions ◽  
Selective Emitter ◽  
Driving Time ◽  
Novel Method ◽  
The Difference ◽  
Surface Morphologies

Recently, selective emitter (SE) technology has attracted renewed attention in the Si solar cell industry to achieve an improved conversion efficiency of passivated-emitter rear-contact (PERC) cells. In this study, we presented a novel technique for the SE formation by controlling the surface morphology of Si wafers. SEs were formed simultaneously, that is, in a single step for the doping process on different surface morphologies, nano/micro-surfaces, which were formed during the texturing processes; in the same doping process, the nano- and micro-structured areas showed different sheet resistances. In addition, the difference in sheet resistance between the heavily doped and shallow emitters could be controlled from almost 0 to 60 Ω/sq by changing the doping process conditions, pre-deposition and driving time, and temperature. Regarding cell fabrication, wafers simultaneously doped in the same tube were used. The sheet resistance of the homogeneously doped-on standard micro-pyramid surface was approximately 82 Ω/sq, and those of the selectively formed nano/micro-surfaces doped on were on 62 and 82 Ω/sq, respectively. As a result, regarding doped-on selectively formed nano/micro-surfaces, SE cells showed a JSC increase (0.44 mA/cm2) and a fill factor (FF) increase (0.6%) with respect to the homogeneously doped cells on the micro-pyramid surface, resulting in about 0.27% enhanced conversion efficiency.

Doping Profile Effect of Shallow Emitter Junction in Selective Emitter c-Si Solar Cell with Reactive Ion Etching Etch Back Process

2013 ◽  
Vol 10 (8) ◽  
pp. 1779-1783
Author(s):  
Bonggi Kim ◽  
Cheolmin Park ◽  
Nagarajan Balaji ◽  
Yongwoo Lee ◽  
Kyuwan Song ◽  
...  
Keyword(s):  
Solar Cell ◽  
Reactive Ion Etching ◽  
Doping Profile ◽  
Ion Etching ◽  
Selective Emitter ◽  
Si Solar Cell ◽  
Emitter Junction

scholarly journals Changes in the composition of wastewater as a result of dehydrochlorination of 1,3-dichloropropan-2-ol under different process conditions

2014 ◽  
Vol 16 (1) ◽  
pp. 92-96
Author(s):  
Anna Krzyżanowska ◽  
Eugeniusz Milchert ◽  
Marcin Bartkowiak
Keyword(s):  
Alkali Solution ◽  
Process Conditions ◽  
Column System ◽  
By Products

Abstract The results of dehydrochlorination of 1,3-dichloropropan-2-ol to epichlorohydrin are reported. The process ran in the reaction-stripping column system with a continuous removal of epichlorohydrin in a steam stream. The influence of 10 wt% alkali solution (NaOH, Ca(OH)2) and the method of distillate collection on the 1,3-dichloropropan-2-ol conversion, selectivity of transformation to epichlorohydrin and by-products, and the composition of wastewater have been analysed.

scholarly journals Effects of Laser Doping on Selective Emitter Si Solar Cells

2016 ◽  
Vol 4 (2) ◽  
pp. 54-58
Author(s):  
Sungeun Park ◽  
Hyomin Park ◽  
Junggyu Nam ◽  
JungYup Yang ◽  
Dongho Lee ◽  
...  
Keyword(s):  
Solar Cells ◽  
Laser Doping ◽  
Selective Emitter ◽  
Si Solar Cells

scholarly journals Germanium and Indium Recovery from Zinc Metallurgy by-Products—Dross Leaching in Sulphuric and Oxalic Acids

Metals ◽  
2018 ◽  
Vol 8 (12) ◽  
pp. 1041 ◽  
Author(s):  
Michał Drzazga ◽  
Ryszard Prajsnar ◽  
Andrzej Chmielarz ◽  
Grzegorz Benke ◽  
Katarzyna Leszczyńska-Sejda ◽  
...  
Keyword(s):  
Oxalic Acid ◽  
Oxalic Acid Solution ◽  
Process Conditions ◽  
Oxide Addition ◽  
Main Components ◽  
The Impact ◽  
Temperature Time ◽  
By Products ◽  
Oxalic Acids ◽  
Rectification Process

Leaching of the dross containing 28.7% Sn, 18.0 Pb, 10.6% Cu, 8.9% Ge, 8.1% Zn, and 2.7% In in sulphuric and oxalic acid solution was investigated. The dross was obtained from thermal oxidation of by-product alloy generated during a New Jersey (NJ) zinc rectification process. The influence of different process conditions (temperature, time, acid concentration, and solid to liquid ratio) on leaching yield of the main components was determined. Additionally, the impact of oxidant (hydrogen peroxide, sodium hypochlorite, manganese (IV) oxide) addition on leachabilities was investigated. Germanium leaching yields exceeding 80% were observed for both sulphuric and oxalic acid solutions. Indium leachability in H2C2O4(aq) was found at the level of 20%, while in H2SO4(aq), it strongly depends on process temperature, and reached 80% at 80 °C.

Sign in / Sign up

Export Citation Format

Share Document