Anapole enhanced on-chip routing of spin-valley photons in 2D materials for silicon integrated optical communication

2021 ◽  
Author(s):  
Qi Yao ◽  
Ya-Qing Bie ◽  
Jianfa Chen ◽  
Jinyang Li ◽  
Feng Li ◽  
...  
Nanoscale ◽  
2016 ◽  
Vol 8 (4) ◽  
pp. 2227-2233 ◽  
Author(s):  
Shengtao Mei ◽  
Kun Huang ◽  
Hong Liu ◽  
Fei Qin ◽  
Muhammad Q. Mehmood ◽  
...  

The orbital angular momentum (OAM) of light can be taken as an independent and orthogonal degree of freedom for multiplexing in an optical communication system, potentially improving the system capacity to hundreds of Tbits per second.


2020 ◽  
Vol 14 (12) ◽  
pp. 2000239
Author(s):  
Jie You ◽  
Yukun Luo ◽  
Jie Yang ◽  
Jianghua Zhang ◽  
Ke Yin ◽  
...  

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
L. Xiong ◽  
C. Forsythe ◽  
M. Jung ◽  
A. S. McLeod ◽  
S. S. Sunku ◽  
...  

Abstract Photonic crystals are commonly implemented in media with periodically varying optical properties. Photonic crystals enable exquisite control of light propagation in integrated optical circuits, and also emulate advanced physical concepts. However, common photonic crystals are unfit for in-operando on/off controls. We overcome this limitation and demonstrate a broadly tunable two-dimensional photonic crystal for surface plasmon polaritons. Our platform consists of a continuous graphene monolayer integrated in a back-gated platform with nano-structured gate insulators. Infrared nano-imaging reveals the formation of a photonic bandgap and strong modulation of the local plasmonic density of states that can be turned on/off or gradually tuned by the applied gate voltage. We also implement an artificial domain wall which supports highly confined one-dimensional plasmonic modes. Our electrostatically-tunable photonic crystals are derived from standard metal oxide semiconductor field effect transistor technology and pave a way for practical on-chip light manipulation.


Nanomaterials ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 665 ◽  
Author(s):  
Zhongyi Guo ◽  
Xiaoru Nie ◽  
Fei Shen ◽  
Hongping Zhou ◽  
Qingfeng Zhou ◽  
...  

As a new field of optical communication technology, on-chip graphene devices are of great interest due to their active tunability and subwavelength scale. In this paper, we systematically investigate optical switches at frequency of 30 THz, including Y-branch (1 × 2), X-branch (2 × 2), single-input three-output (1 × 3), two-input three-output (2 × 3), and two-input four-output (2 × 4) switches. In these devices, a graphene monolayer is stacked on the top of a PMMA (poly methyl methacrylate methacrylic acid) dielectric layer. The optical response of graphene can be electrically manipulated; therefore, the state of each channel can be switched ON and OFF. Numerical simulations demonstrate that the transmission direction can be well manipulated in these devices. In addition, the proposed devices possess advantages of appropriate ON/OFF ratios, indicating the good performance of graphene in terahertz switching. These devices provide a new route toward terahertz optical switching.


Electronics ◽  
2020 ◽  
Vol 9 (1) ◽  
pp. 133
Author(s):  
Aleksandr Vasjanov ◽  
Vaidotas Barzdenas

Broadband amplifiers are essential building blocks used in high data rate wireless, radar, and instrumentation systems, as well as in optical communication systems. Only a traveling-wave amplifier (TWA) provides sufficient bandwidth for broadband applications without reducing modern linearization techniques. TWA requires gate-line and drain-line termination, which can be implemented on- and off-chip. This article compares the performance of identical 0.13 μm CMOS TWAs, differing only in gate-line termination placement. Measurement results revealed that the designed TWAs with on- and off-chip termination have a bandwidth of 10 GHz with a maximum gain of 15 dB and a power-added efficiency (PAE) of 5%–22% in the whole operating frequency range. Placing the gate-line termination off-chip results in an S21 flatness reduction, compared to the gain of a TWA with on-chip termination. Gain fluctuation over frequency is reduced by 4–8 dB when the termination resistor is placed as an external circuit.


2020 ◽  
Vol 9 (1) ◽  
Author(s):  
Zhifeng Zhang ◽  
Haoqi Zhao ◽  
Danilo Gomes Pires ◽  
Xingdu Qiao ◽  
Zihe Gao ◽  
...  

Abstract On-chip integrated laser sources of structured light carrying fractional orbital angular momentum (FOAM) are highly desirable for the forefront development of optical communication and quantum information–processing technologies. While integrated vortex beam generators have been previously demonstrated in different optical settings, ultrafast control and sweep of FOAM light with low-power control, suitable for high-speed optical communication and computing, remains challenging. Here we demonstrate fast control of the FOAM from a vortex semiconductor microlaser based on fast transient mixing of integer laser vorticities induced by a control pulse. A continuous FOAM sweep between charge 0 and charge +2 is demonstrated in a 100 ps time window, with the ultimate speed limit being established by the carrier recombination time in the gain medium. Our results provide a new route to generating vortex microlasers carrying FOAM that are switchable at GHz frequencies by an ultrafast control pulse.


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