Synthese und Hochdruckverhalten quaternärer Chalkogenidhalogenide M2M′X3Y (M = Zn, Cd; M′ = Al, Ga, In; X = Se, Te; Y = CI, Br, I) / Synthesis and High-Pressure Behaviour of Quaternary Chalcogenide Halides M2M′X3Y (M = Zn, Cd; M′ = Al, Ga, In; X = Se, Te; Y = Cl, Br, I)
Quaternary chalcogenide halides M2M′X3Y (M = Zn, Cd; M′ = Al, Ga, In; X = Se, Te; Y = Cl, Br, I) can be synthesized by heating stoichiometric amounts of the binary components MX. MY2, and M′2X3 in evacuated sealed quartz ampoules. In the case of aluminium and gallium compounds, a mixture of the M′ and X elements rather than the binary compounds has been used. The products are typical tetrahedral compounds, crystallizing with either the defect wurtzite-type or the defect zinc-blende-type structure. At 25 kbar, and 1400 °C, Cd2InSe3Cl, Cd2InSe3Br, and Cd2InSe3I transform from the defect wurtzite-type structure to quenchable high-pressure phases with defect NaCl-type structure. The retransformation to the ambient-pressure phases proceeds via intermediates having the defect zinc-blende-type structure. Some aspects of the apparent non-stoichiometry in the high-pressure phases are discussed