Microstructural Studies of an Oxide-Dispersion-Stabilized Niobium Composite Using Transmission Electron Microscopy

2009 ◽  
pp. 189-189-10
Author(s):  
AS Ramani ◽  
PR Howell
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Oxide Dispersion ◽  
Transmission Electron ◽  
Microstructural Studies

Microstructural Studies of High Coercivity Nd15Fe77B8 Sintered Magnets

1987 ◽  
Vol 96 ◽  
Author(s):  
M. H. Ghandehari ◽  
J. Fidler
Keyword(s):  
Electron Microscopy ◽  
Heat Treatment ◽  
Transmission Electron Microscopy ◽  
Grain Boundary ◽  
Electron Microprobe ◽  
Boundary Phase ◽  
High Coercivity ◽  
Transmission Electron ◽  
Microstructural Studies ◽  
Domain Reversal

ABSTRACTMicrostructures of Nd15−xDyxFe77B8 prepared by alloying with Dy, and by using Dy2O3 as a sinl'ken adidive, have been determined using electron microprobe and transmission electron microscopy. The results have shown a higher Dy concentration near the grain boundaries of the 2–14–1 phase for magnets doped with Dy2O 3, as compared to the Dy-alloyed magnets. A two-step post sintering heat treatment was also studied for the two systems. The resultant concentration gradient of Dy in the 2–14–1 phase of the oxide-doped magnets is explained by the reaction of Dy2O3 with the Nd-rich grain boundary phase and its slow diffusion into thg 4–14–1 phase. Increased Dy concentration near the grain boundary is more effective in improving the coercivity, as domain reversal nucleation originates at or near this region.

Microstructures of Polysilicon

1987 ◽  
Vol 106 ◽  
Author(s):  
R. Sinclair ◽  
A. H. Carim ◽  
J. Morgiel ◽  
J. C. Bravman
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Polycrystalline Silicon ◽  
Transmission Electron ◽  
Polysilicon Films ◽  
In Situ Heating ◽  
Phosphorus Doped ◽  
Microstructural Studies

ABSTRACTSome typical microstructural studies of polycrystalline silicon using transmission electron microscopy (TEM) are described, including the application of this material for assisting TEM investigations themselves. Examples include oxidation and realignment of polysilicon thin films, the structure of polysilicon in EEPROM devices, polysilicon in trench capacitors and measurement of SiO2 layer thicknesses with polysilicon overlayers. It is also shown tha grain growth in heavily phosphorus doped polysilicon films can be followed by in situ heating in the TEM.

Microstructural Studies of Co Silicide Layers Formed on SiGe and SiGeC

1996 ◽  
Vol 448 ◽  
Author(s):  
S. Jin ◽  
H. Bender ◽  
R.A. Donaton ◽  
K. Maex ◽  
A. Vantomme ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Transition Temperature ◽  
Annealing Temperature ◽  
Structural Development ◽  
Transmission Electron ◽  
Microstructural Studies

AbstractTransmission electron microscopy is used to investigate the structural development as a function of the annealing temperature of Co-silicides prepared on SiGe and SiGeC. The transition temperature from Co(SiGe) into Co(SiGe)2 is higher for SiGeC than for SiGe.

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