The Bonding Structure and Compositional Analysis of Plasma Enhanced and Low Pressure Chemical Vapor Deposited Silicon Dielectric Films

Emerging Semiconductor Technology ◽

10.1520/stp25750s ◽

2008 ◽

pp. 173-173-17

Author(s):

SV Nguyen ◽

JR Abernathey ◽

SA Fridmann ◽

ML Gibson

Keyword(s):

Compositional Analysis ◽

Chemical Vapor ◽

Low Pressure ◽

Dielectric Films ◽

Bonding Structure ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Properties of low‐pressure chemical vapor deposited dielectric films from hexamethyldisilazane

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.576300 ◽

1989 ◽

Vol 7 (3) ◽

pp. 1446-1450 ◽

Author(s):

Dean Freeman ◽

Werner Kern

Keyword(s):

Chemical Vapor ◽

Low Pressure ◽

Dielectric Films ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Suppression and characterization of interface states at low-pressure-chemical-vapor-deposited SiN /III-nitride heterostructures

Applied Surface Science ◽

10.1016/j.apsusc.2020.148530 ◽

2021 ◽

Vol 542 ◽

pp. 148530

Author(s):

Kexin Deng ◽

Xinhua Wang ◽

Sen Huang ◽

Haibo Yin ◽

Jie Fan ◽

...

Keyword(s):

Chemical Vapor ◽

Low Pressure ◽

Interface States ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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ChemInform Abstract: Rapid Thermal Annealed Low Pressure Chemical-Vapor-Deposited SiO2 as Gate Dielectric in Silicon MOSFET′s.

10.1002/chin.198736362 ◽

1987 ◽

Vol 18 (36) ◽

Author(s):

S. ANG ◽

S. WILSON

Keyword(s):

Gate Dielectric ◽

Chemical Vapor ◽

Low Pressure ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Analysis of low‐pressure chemical vapor deposited silicon nitride by Rutherford backscattering spectrometry

Applied Physics Letters ◽

10.1063/1.93714 ◽

1982 ◽

Vol 41 (9) ◽

pp. 844-846 ◽

Author(s):

H. L. Hwang ◽

C. C. Hwu ◽

J. C. Liue ◽

H. H. Lin

Keyword(s):

Silicon Nitride ◽

Rutherford Backscattering Spectrometry ◽

Chemical Vapor ◽

Low Pressure ◽

Rutherford Backscattering ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Low Pressure Chemical Vapor Deposited Tungsten Silicide For GaAs ICs

10.1117/12.941044 ◽

1987 ◽

Author(s):

Min-Shyong Lin ◽

Hen-Chang Chou

Keyword(s):

Chemical Vapor ◽

Low Pressure ◽

Tungsten Silicide ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Annealing and oxidation behavior of low‐pressure chemical vapor deposited tungsten slicide layers on polycrystalline silicon gates

Journal of Applied Physics ◽

10.1063/1.339414 ◽

1987 ◽

Vol 62 (7) ◽

pp. 2830-2835 ◽

Author(s):

D. K. Sadana ◽

A. E. Morgan ◽

M. H. Norcott ◽

S. Naik

Keyword(s):

Polycrystalline Silicon ◽

Oxidation Behavior ◽

Chemical Vapor ◽

Low Pressure ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Thermal annealing effect on ultraviolet-light-induced leakage current in low-pressure chemical vapor deposited silicon nitride films

Thin Solid Films ◽

10.1016/j.tsf.2013.10.163 ◽

2014 ◽

Vol 550 ◽

pp. 545-553 ◽

Author(s):

Kiyoteru Kobayashi ◽

Aran Suzuki ◽

Kokichi Ishikawa

Keyword(s):

Silicon Nitride ◽

Leakage Current ◽

Thermal Annealing ◽

Ultraviolet Light ◽

Chemical Vapor ◽

Low Pressure ◽

Annealing Effect ◽

Silicon Nitride Films ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Electrical characterization of low‐pressure chemical‐vapor‐deposited silicon dioxide metal‐oxide‐silicon structures

Journal of Applied Physics ◽

10.1063/1.353093 ◽

1993 ◽

Vol 73 (5) ◽

pp. 2397-2401 ◽

Author(s):

S. S. Ang ◽

Y. J. Shi ◽

W. D. Brown

Keyword(s):

Metal Oxide ◽

Silicon Dioxide ◽

Electrical Characterization ◽

Chemical Vapor ◽

Low Pressure ◽

Chemical Vapor Deposited ◽

Pressure Chemical ◽

Silicon Structures ◽

Metal Oxide Silicon

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Influence of deposition pressure on the bulk and interface states in low pressure chemical vapor deposited polycrystalline silicon thin‐film transistors

Applied Physics Letters ◽

10.1063/1.111473 ◽

1994 ◽

Vol 64 (20) ◽

pp. 2709-2711 ◽

Author(s):

C. A. Dimitriadis ◽

D. H. Tassis ◽

N. A. Economou ◽

G. Giakoumakis

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Interface States ◽

Deposition Pressure ◽

Silicon Thin Film ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Ge nanodot-mediated densification and crystallization of low-pressure chemical vapor deposited Si3N4 for advanced complementary metal-oxide-semiconductor photonics and electronics applications

Nanotechnology ◽

10.1088/1361-6528/ab2d4a ◽

2019 ◽

Vol 30 (40) ◽

pp. 405201

Author(s):

Kang-Ping Peng ◽

Tsung Lin Huang ◽

Tom George ◽

Horng-Chih Lin ◽

Pei-Wen Li

Keyword(s):

Metal Oxide ◽

Chemical Vapor ◽

Complementary Metal Oxide Semiconductor ◽

Low Pressure ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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