p-Type Field Effect Transistor and UV-Photoconductive Characteristics of Na Doped ZnMgO Thin Films

2013 ◽  
Vol 668 ◽  
pp. 681-685
Author(s):  
Ya Xue ◽  
Hai Ping He ◽  
Zhi Zhen Ye
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Carrier Mobility ◽  
Room Temperature ◽  
Zno Films ◽  
Electrical Measurements ◽  
Acceptor Dopant ◽  
Znmgo Thin Film ◽  
Effect Transistor ◽  
P Type

In this study, the authors have presented results for fabricated ZnO based FET and the UV-photoconductive characteristics of Na doped ZnMgO thin films. The electrical measurements confirmed that the conductivity of the Na doped ZnMgO thin film is p-type, and the carrier mobility was estimated to be 2.3 cm2V-1S-1. Moreover, after exposed to the 365 nm ultraviolet light, the Na doped ZnMgO thin films still exhibited p-type behavior under gate voltage ranging from -5 to 2 V, and the Id increased a little while the carrier mobility did not change much. The photocurrent was measured under a bias of 6 V in air at room temperature. The films performed a higher current intensity after the illumination. The instantaneous rise of the photocurrent was completed when exposed to the 365 nm ultraviolet for 20 s, after switching the ultraviolet off the photocurrent decayed in a slower rate. The enhance rate of photocurrent was about 1.33 %. Conclusively, Na is a considerable acceptor dopant for making high quality p-type ZnO films, and the tiny change in the photocurrent of p-type Na doped ZnMgO thin film made it relatively stable when fabricating LEDs and other optoelectronic devices.

Croconic Acid Thin Film Formation for Ferroelectric Gate OFETs

2013 ◽  
Vol 1587 ◽  
Author(s):  
Shun-ichiro Ohmi ◽  
Kazuaki Takayama ◽  
Hiroshi Ishiwara
Keyword(s):  
Thin Film ◽  
Room Temperature ◽  
Film Formation ◽  
Ferroelectric Properties ◽  
Gate Insulator ◽  
Capacitance Voltage ◽  
Type C ◽  
Effect Transistor ◽  
P Type ◽  
First Time

ABSTRACTPentacene-based ferroelectric gate transistors with croconic acid (CrA) thin film was fabricated for the first time. The memory window (MW) of 1.9 V was obtained from the capacitance-voltage (C-V) characteristics of Al/CrA(50 nm)/SiO2/Si(100) metal-ferroelectric-insulator-semiconductor (MFIS) diode, where the deposition temperature of CrA was room temperature (RT). Butterfly type C-V characteristics was observed for Al/CrA(50 nm)/Al/SiO2/ Si(100) metal-ferroelectric-metal (MFM) diode. Furthermore, a pentacene-based p-type organic field-effect transistor (OFET) with CrA gate insulator was fabricated, and clockwise hysteresis loop was observed in ID-VG characteristic, which is attributed to the ferroelectric properties of CrA gate insulator.

CHARACTERIZATION OF n AND p TYPE ZNO THIN FILMS DEPOSITED BY CATHODIC PULSED FILTERED VACUUM ARC SYSTEM

2009 ◽  
Vol 23 (06n07) ◽  
pp. 1719-1724
Author(s):  
H. KAVAK ◽  
N. H. ERDOGAN ◽  
K. KARA ◽  
H. YANIS ◽  
Z. BAZ ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Wavelength Region ◽  
Zno Thin Films ◽  
Vacuum Arc ◽  
Zno Films ◽  
Zno Thin Film ◽  
Xrd Pattern ◽  
Zinc Nitride ◽  
P Type

The transparent, conductive n and p -type semiconducting ZnO thin films were prepared by pulsed filtered cathodic vacuum arc deposition (PFCVAD) method. The structural, optical and electrical properties of n and p -type ZnO thin films are investigated after annealing at 450°C. 197 nm thick n -type ZnO thin film was deposited with oxygen pressure of 8.5 × 10-4 Torr . XRD pattern of annealed ZnO thin film exhibits hexagonal structure with (100), (101) and (110) orientations. The crystallite size of semiconductor ZnO thin film is 18 nm, interplanar distance 0.16 nm and lattice constant c is 0.52 nm for (110) orientation. The optical transmittance spectra of n and p -type ZnO films are over 90% in the visible wavelength region with optical energy gap 3.3 eV. p -type ZnO thin films are produced by oxidation of PFCVAD deposited zinc nitride. Zinc nitride is deposited with nitrogen pressure of 8.6 × 10-4 Torr and the thickness of this film is 179 nm. The oxidation of zinc nitride thin films at 450°C results in hexagonal structures p -type ZnO thin films. XRD pattern of this film has the same (100), (101) and (110) orientations with the same crystalline structures as the directly deposited ZnO thin film. Hall measurements indicated that ZnO films were p -type and the highest carrier concentration of 1.08 × 1018 cm -3 and mobility of 93.53 cm2/Vs were obtained.

Sb2Te3 and Bi2Te3 Thin Films Grown by Molecular Beam Epitaxy at Room Temperature

2011 ◽  
Vol 1329 ◽  
Author(s):  
Z. Aabdin ◽  
M. Winkler ◽  
D. Bessas ◽  
J. König ◽  
N. Peranio ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Charge Carrier ◽  
Power Factor ◽  
Carrier Mobility ◽  
Room Temperature ◽  
Molecular Beam ◽  
Charge Carrier Mobility ◽  
X Ray

ABSTRACTNano-alloyed p-type Sb2Te3 and n-type Bi2Te3 thin films were grown on SiO2/Si and BaF2 substrates by molecular beam epitaxy (MBE) in two steps: (i) Repeated deposition of five-layer stacks with sequence Te-X-Te-X-Te (X = Sb or Bi) with elemental layer thicknesses of 0.2 nm on substrates at room temperature, (ii) annealing at 250 °C for two hours at which phase formation of Sb2Te3 or Bi2Te3 occurred. The room temperature MBE deposition method reduces surface roughness, allows the use of non lattice-matched substrates, and yields a more accurate and easier control of the Te content compared to Bi2Te3 thin films, which were epitaxially grown on BaF2 substrates at 290 °C. X-ray diffraction revealed that the thin films were single phase, poly-crystalline, and textured. The films showed grain sizes of 500 nm for Sb2Te3 and 250 nm for Bi2Te3, analyzed by transmission electron microscopy (TEM). The in-plane transport properties (thermopower S, electrical conductivity σ, charge carrier density n, charge carrier mobility μ, power factor S2σ) were measured at room temperature. The nano-alloyed Sb2Te3 thin film revealed a remarkably high power factor of 29 μW cm-1 K-2 similar to epitaxially grown Bi2Te3 thin films and Sb2Te3 single crystalline bulk materials. This large power factor can be attributed to a high charge carrier mobility of 402 cm2 V−1 s-1 similar to high-ZT Bi2Te3/Sb2Te3 superlattices. However, for the nano-alloyed Bi2Te3 thin film a low power factor of 8 μW cm−1 K-2 and a low charge carrier mobility of 80 cm2 V−1 s−1 were found. Detailed microstructure and phase analyses were carried out by energy-filtered TEM in cross-sections. Quantitative chemical analysis by energy-dispersive x−ray spectroscopy (EDS) was also applied. In Bi2Te3 thin films, few nanometer thick Bi-rich blocking layers at grain boundaries and Te fluctuations by 1.3 at.% within the grains were observed. The small charge carrier densities are explained by a reduced antisite defect density due to the low temperatures to which the thin films were exposed during annealing.

Erratum: “Thin-film transistors based on p-type Cu2O thin films produced at room temperature” [Appl. Phys. Lett. 96, 192102 (2010)]

2010 ◽  
Vol 96 (23) ◽  
pp. 239902 ◽  
Author(s):  
Elvira Fortunato ◽  
Vitor Figueiredo ◽  
Pedro Barquinha ◽  
Elangovan Elamurugu ◽  
Raquel Barros ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Cu2o Thin Films ◽  
P Type

scholarly journals Thin-film transistors based on p-type Cu2O thin films produced at room temperature

2010 ◽  
Vol 96 (19) ◽  
pp. 192102 ◽  
Author(s):  
Elvira Fortunato ◽  
Vitor Figueiredo ◽  
Pedro Barquinha ◽  
Elangovan Elamurugu ◽  
Raquel Barros ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Cu2o Thin Films ◽  
P Type

A Comparative Study of MOCVD Produced ZnO Films Doped with N, As, P and Sb

2006 ◽  
Vol 957 ◽  
Author(s):  
Gary S. Tompa ◽  
S. Sun ◽  
C. E. Rice ◽  
L. G. Provost ◽  
D. Mentel
Keyword(s):  
Thin Films ◽  
Comparative Study ◽  
Ohmic Contacts ◽  
Zno Thin Films ◽  
Zno Films ◽  
Electrical Measurements ◽  
Light Emitters ◽  
Hall Measurements ◽  
Deposition Parameters ◽  
P Type

ABSTRACTZnO thin films are of interest for an array of applications; including: light emitters, photovoltaics, sensors and transparent contacts among others. Of particular interest is the potential to produce p-type layers from which p-n junction devices could be routinely produced. While it is fairly routine for MOCVD to produce n-type films with doping concentrations in the 10E20 cm-3 range and resistivities below 10E-3 ohm-cm; it is very difficult to produce measurable p-type ZnO. We report on our efforts with doping films p-type using N gas sources and metalorganic sources of P, As, and Sb. Films showing acceptor bands by photoluminescence have been demonstrated; however reliable electrical measurements remain difficult. Specific problems include achieving low resistance ohmic contacts, accounting for the photo-responsiveness of ZnO films and sensitivity limits in Hall measurements of low-doped and compensated materials. The presentation will review deposition parameters, produced and processed films and material characteristics.

Studies on Water in the Hydration Chamber of a Modified Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 544-545
Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Steady State ◽  
Room Temperature ◽  
Small Mass ◽  
Equilibrium Pressure ◽  
Biological Objects ◽  
Mechanical Pump ◽  
Differential Pumping

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

Thermodynamics and Microstructure Development in the Thin Film Reaction of Aluminum on Silicon Carbide

1995 ◽  
Vol 403 ◽  
Author(s):  
T. S. Hayes ◽  
F. T. Ray ◽  
K. P. Trumble ◽  
E. P. Kvam
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Microstructure Development ◽  
P Type ◽  
Microstructural Studies

AbstractA refined thernodynamic analysis of the reaction between molen Al and SiC is presented. The calculations indicate much higher Si concentrations for saturation with respect to AkC 3 formation than previously reported. Preliminary microstructural studies confirm the formation of interfacial A14C3 for pure Al thin films on SiC reacted at 9000C. The implications of the calculations and experimental observations for the production of ohmic contacts to p-type SiC are discussed.

A facile room temperature chemical transformation approach for binder-free thin film formation of Ag2Te and lithiation/delithiation chemistry of the film

2016 ◽  
Vol 45 (43) ◽  
pp. 17312-17318 ◽  
Author(s):  
Eun-Kyung Kim ◽  
Dasom Park ◽  
Nabeen K. Shrestha ◽  
Jinho Chang ◽  
Cheol-Woo Yi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Aqueous Solution ◽  
Ion Exchange ◽  
Chemical Transformation ◽  
Room Temperature ◽  
Film Formation ◽  
Synthetic Method ◽  
Binder Free ◽  
Thin Film Formation

An aqueous solution based synthetic method for binder-free Ag2Te thin films using ion exchange induced chemical transformation of Ag/AgxO thin films.

Crystallization of Zn-rich and P-rich amorphous Zn3P2 thin films

1988 ◽  
Vol 66 (5) ◽  
pp. 373-375 ◽  
Author(s):  
C. J. Arsenault ◽  
D. E. Brodie
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Structural Properties ◽  
Crystallization Process ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Conductivity Activation Energy ◽  
X Ray

Zn-rich and P-rich amorphous Zn3P2 thin films were prepared by co-evaporation of the excess element during the normal Zn3P2 deposition. X-ray diffraction techniques were used to investigate the structural properties and the crystallization process. Agglomeration of the excess element within the as-made amorphous Zn3P2 thin film accounted for the structural properties observed after annealing the sample. Electrical measurements showed that excess Zn reduces the conductivity activation energy and increases the conductivity, while excess P up to 15 at.% does not alter the electrical properties significantly.

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