scholarly journals Statistical Analysis of Electrical Breakdown in a Micro Gap Using Weibull Distribution and Discussion on its Processes in High Voltage

2004 ◽  
Vol 124 (9) ◽  
pp. 785-790 ◽  
Author(s):  
Kuniharu Imai
Keyword(s):  
Statistical Analysis ◽  
Weibull Distribution ◽  
High Voltage ◽  
Electrical Breakdown

Statistical Analysis of Breakdown Voltages in Virgin and Aged LDPE Using Johnson SB and Weibull Distribution

2016 ◽  
Vol 818 ◽  
pp. 58-62
Author(s):  
Nurul A. Bani ◽  
Zulkurnain Abdul-Malek ◽  
Hussein Ahmad
Keyword(s):  
Statistical Analysis ◽  
Weibull Distribution ◽  
Density Function ◽  
Polymeric Material ◽  
High Voltage ◽  
Goodness Of Fit ◽  
Engineering Application ◽  
Statistical Parameters ◽  
Insulating Material ◽  
High Voltage Engineering

Polymeric material such as low density polyethylene (LDPE) has been used for decades as insulating material. Any polymeric material will experience degradation after prolonged application of high electrical stresses. Deeper understanding of the long term electrical degradation of the insulating material is necessary to predict the life of high voltage cable. Electroluminescence method (EL) is used to detect the breakdown voltages of thin film LDPE. This method utilizes a Peltier cooled electron multiplying charge coupled device (EMCCD) camera to detect the breakdown of the sample. Statistical distribution of the AC breakdown voltages of 100μm virgin and aged LDPE has been analysed. Comparison for the best fitted distribution was made for Weibull distribution and Johnson SB distribution using Anderson-Darling (A2) goodness-of-fit and Kolmogorov-Smirnov (D) goodness-of-fit (GOF). Johnson SB is rarely used in high voltage engineering application. The probability density function (PDF) and the cumulative density function (CDF) for both distributions are defined in this article. The statistical parameters used are estimated based on Maximum Likelihood Estimation (MLE) for both distributions. Based on the statistical analysis, it is observed that Johnson SB provide better fitting than Weibull distribution with lower fitting error and that 3-parameter Weibull is much better fitting than 2-parameter Weibull distribution for most cases. It is also found that the median breakdown voltage of LDPE samples decreases with increasing aging temperature.

scholarly journals GaN-Based PCSS with High Breakdown Fields

Electronics ◽  
2021 ◽  
Vol 10 (13) ◽  
pp. 1600
Author(s):  
Matthew Gaddy ◽  
Vladimir Kuryatkov ◽  
Nicholas Wilson ◽  
Andreas Neuber ◽  
Richard Ness ◽  
...  
Keyword(s):  
Active Region ◽  
High Voltage ◽  
Electrical Breakdown ◽  
Base Material ◽  
Hydride Vapor Phase Epitaxy ◽  
Switching Behavior ◽  
Breakdown Field ◽  
Organic Chemical ◽  
Mesa Structure ◽  
Gap Spacing

The suitability of GaN PCSSs (photoconductive semiconductor switches) as high voltage switches (>50 kV) was studied using a variety of commercially available semi-insulating GaN wafers as the base material. Analysis revealed that the wafers’ physical properties were noticeably diverse, mainly depending on the producer. High Voltage PCSSs were fabricated in both vertical and lateral geometry with various contacts, ohmic (Ti/Al/Ni/Au or Ni/Au), with and without a conductive n-GaN or p-type layer grown by metal-organic chemical vapor deposition. Inductively coupled plasma (ICP) reactive ion etching (RIE) was used to form a mesa structure to reduce field enhancements allowing for a higher field to be applied before electrical breakdown. The length of the active region was also varied from a 3 mm gap spacing to a 600 µm gap spacing. The shorter gap spacing supports higher electric fields since the number of macro defects within the device’s active region is reduced. Such defects are common in hydride vapor phase epitaxy grown samples and are likely one of the chief causes for electrical breakdown at field levels below the bulk breakdown field of GaN. Finally, the switching behavior of PCSS devices was tested using a pulsed, high voltage testbed and triggered by an Nd:YAG laser. The best GaN PCSS fabricated using a 600 µm gap spacing, and a mesa structure demonstrated a breakdown field strength as high as ~260 kV/cm.

scholarly journals Aluminum current collector for high voltage Li-ion battery. Part I: A benchmark study with statistical analysis

2021 ◽  
Vol 126 ◽  
pp. 107013
Author(s):  
Chloé Bizot ◽  
Marie-Anne Blin ◽  
Pierre Guichard ◽  
Jonathan Hamon ◽  
Vincent Fernandez ◽  
...  
Keyword(s):  
Statistical Analysis ◽  
High Voltage ◽  
Current Collector ◽  
Li Ion Battery ◽  
Benchmark Study ◽  
Li Ion

On the Mechanism of High-Voltage Pulsed Fragmentation from Electrical Breakdown Process

2021 ◽  
Author(s):  
Xiaohua Zhu ◽  
Yunxu Luo ◽  
Weiji Liu ◽  
Ling He ◽  
Rui Gao ◽  
...  
Keyword(s):  
High Voltage ◽  
Electrical Breakdown ◽  
Breakdown Process

scholarly journals The Effects of Aluminum-Nitride Nano-Fillers on the Mechanical, Electrical, and Thermal Properties of High Temperature Vulcanized Silicon Rubber for High-Voltage Outdoor Insulator Applications

Materials ◽  
2019 ◽  
Vol 12 (21) ◽  
pp. 3562 ◽  
Author(s):  
Chang Liu ◽  
Yiwen Xu ◽  
Daoguang Bi ◽  
Bing Luo ◽  
Fuzeng Zhang ◽  
...  
Keyword(s):  
Contact Angle ◽  
Thermal Properties ◽  
High Temperature ◽  
High Voltage ◽  
Breakdown Strength ◽  
Electrical Breakdown ◽  
Theoretical Models ◽  
Dielectric Constants ◽  
Silicon Rubber ◽  
Electrical Breakdown Strength

AlN nanoparticles were added into commercial high-temperature-vulcanized silicon rubber composites, which were designed for high-voltage outdoor insulator applications. The composites were systematically studied with respect to their mechanical, electrical, and thermal properties. The thermal conductivity was found to increase greatly (>100%) even at low fractions of the AlN fillers. The electrical breakdown strength of the composites was not considerably affected by the AlN filler, while the dielectric constants and dielectric loss were found to be increased with AlN filler ratios. At higher doping levels above 5 wt% (~2.5 vol%), electrical tracking performance was improved. The AlN filler increased the tensile strength as well as the hardness of the composites, and decreased their flexibility. The hydrophobic properties of the composites were also studied through the measurements of temperature-dependent contact angle. It was shown that at a doping level of 1 wt%, a maximum contact angle was observed around 108°. Theoretical models were used to explain and understand the measurement results. Our results show that the AlN nanofillers are helpful in improving the overall performances of silicon rubber composite insulators.

Random Combination Factors for Still Water and Wave Bending Moments

2019 ◽  
Author(s):  
Wenbo Huang
Keyword(s):  
Statistical Analysis ◽  
Weibull Distribution ◽  
Ship Hull ◽  
Combined Processes ◽  
Bending Moments ◽  
Hull Girder ◽  
Random Combination ◽  
Load Combination ◽  
Characteristic Values ◽  
Wave Models

Abstract Based on the extreme value of the primary loads of ship hull girder instead of characteristic values, the more reasonable load combination factors are defined. In order to evaluate the random variation of newly defined load combination factors, based on Ferry-Berges & Castanheta (FBC) and Poisson square wave models, the still water bending moments (SWBM), vertical wave bending moments (VWBM) and their combined processes are simulated to get the random realizations of load combination factors. The statistical analysis results show that the load combination factors take the value of 1 with the highest probability and can be well fitted by the Weibull distribution. Such information should be incorporated appropriately in the reliability analysis of ship hull girder.

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