On the Mechanism of High-Voltage Pulsed Fragmentation from Electrical Breakdown Process

2021 ◽  
Author(s):  
Xiaohua Zhu ◽  
Yunxu Luo ◽  
Weiji Liu ◽  
Ling He ◽  
Rui Gao ◽  
...  
Keyword(s):  
High Voltage ◽  
Electrical Breakdown ◽  
Breakdown Process

scholarly journals GaN-Based PCSS with High Breakdown Fields

Electronics ◽  
2021 ◽  
Vol 10 (13) ◽  
pp. 1600
Author(s):  
Matthew Gaddy ◽  
Vladimir Kuryatkov ◽  
Nicholas Wilson ◽  
Andreas Neuber ◽  
Richard Ness ◽  
...  
Keyword(s):  
Active Region ◽  
High Voltage ◽  
Electrical Breakdown ◽  
Base Material ◽  
Hydride Vapor Phase Epitaxy ◽  
Switching Behavior ◽  
Breakdown Field ◽  
Organic Chemical ◽  
Mesa Structure ◽  
Gap Spacing

The suitability of GaN PCSSs (photoconductive semiconductor switches) as high voltage switches (>50 kV) was studied using a variety of commercially available semi-insulating GaN wafers as the base material. Analysis revealed that the wafers’ physical properties were noticeably diverse, mainly depending on the producer. High Voltage PCSSs were fabricated in both vertical and lateral geometry with various contacts, ohmic (Ti/Al/Ni/Au or Ni/Au), with and without a conductive n-GaN or p-type layer grown by metal-organic chemical vapor deposition. Inductively coupled plasma (ICP) reactive ion etching (RIE) was used to form a mesa structure to reduce field enhancements allowing for a higher field to be applied before electrical breakdown. The length of the active region was also varied from a 3 mm gap spacing to a 600 µm gap spacing. The shorter gap spacing supports higher electric fields since the number of macro defects within the device’s active region is reduced. Such defects are common in hydride vapor phase epitaxy grown samples and are likely one of the chief causes for electrical breakdown at field levels below the bulk breakdown field of GaN. Finally, the switching behavior of PCSS devices was tested using a pulsed, high voltage testbed and triggered by an Nd:YAG laser. The best GaN PCSS fabricated using a 600 µm gap spacing, and a mesa structure demonstrated a breakdown field strength as high as ~260 kV/cm.

scholarly journals Design of High Voltage Electrical Breakdown Strength measuring system at 1.8K with a G-M cryocooler

2017 ◽  
Vol 897 ◽  
pp. 012014
Author(s):  
Jian Li ◽  
Rongjin Huang ◽  
Xu Li ◽  
Dong Xu ◽  
Huiming Liu ◽  
...  
Keyword(s):  
High Voltage ◽  
Breakdown Strength ◽  
Electrical Breakdown ◽  
Measuring System ◽  
Electrical Breakdown Strength

scholarly journals The Effects of Aluminum-Nitride Nano-Fillers on the Mechanical, Electrical, and Thermal Properties of High Temperature Vulcanized Silicon Rubber for High-Voltage Outdoor Insulator Applications

Materials ◽  
2019 ◽  
Vol 12 (21) ◽  
pp. 3562 ◽  
Author(s):  
Chang Liu ◽  
Yiwen Xu ◽  
Daoguang Bi ◽  
Bing Luo ◽  
Fuzeng Zhang ◽  
...  
Keyword(s):  
Contact Angle ◽  
Thermal Properties ◽  
High Temperature ◽  
High Voltage ◽  
Breakdown Strength ◽  
Electrical Breakdown ◽  
Theoretical Models ◽  
Dielectric Constants ◽  
Silicon Rubber ◽  
Electrical Breakdown Strength

AlN nanoparticles were added into commercial high-temperature-vulcanized silicon rubber composites, which were designed for high-voltage outdoor insulator applications. The composites were systematically studied with respect to their mechanical, electrical, and thermal properties. The thermal conductivity was found to increase greatly (>100%) even at low fractions of the AlN fillers. The electrical breakdown strength of the composites was not considerably affected by the AlN filler, while the dielectric constants and dielectric loss were found to be increased with AlN filler ratios. At higher doping levels above 5 wt% (~2.5 vol%), electrical tracking performance was improved. The AlN filler increased the tensile strength as well as the hardness of the composites, and decreased their flexibility. The hydrophobic properties of the composites were also studied through the measurements of temperature-dependent contact angle. It was shown that at a doping level of 1 wt%, a maximum contact angle was observed around 108°. Theoretical models were used to explain and understand the measurement results. Our results show that the AlN nanofillers are helpful in improving the overall performances of silicon rubber composite insulators.

Investigation of Electrical Breakdown in Air Using an Image Processing Technique

1992 ◽  
Vol 29 (4) ◽  
pp. 313-320 ◽  
Author(s):  
D. B. Watson ◽  
M. I. Barber ◽  
K. A. Samuels
Keyword(s):  
Image Processing ◽  
High Voltage ◽  
Electrical Breakdown ◽  
Processing Technique ◽  
Image Processing Technique ◽  
Track Segment ◽  
Video Recordings ◽  
High Voltage Breakdown ◽  
Logarithmic Distribution ◽  
Voltage Breakdown

Investigation of electrical breakdown in air using an image processing technique Video recordings of high-voltage breakdown tracks between electrodes in air have been analysed using an image processing technique. The paper discusses the tortuosity of the breakdown tracks, and a logarithmic distribution of track segment lengths has been found.

Electrical Breakdown Characteristics and Testing of High Voltage XLPE and EPR Insulated Cables

1983 ◽  
Vol PER-3 (7) ◽  
pp. 41-42 ◽  
Author(s):  
G. Bahder ◽  
M. Sosnowski ◽  
C. Katz ◽  
R. Eaton ◽  
K. Klein
Keyword(s):  
High Voltage ◽  
Electrical Breakdown

Electrical breakdown stress of mica-insulated high-voltage coils

1976 ◽  
Vol 96 (6) ◽  
pp. 1-7 ◽  
Author(s):  
Tsutomu Tsukui ◽  
Tokio Isogai ◽  
Genji Takahashi ◽  
Keiichi Kaneko
Keyword(s):  
High Voltage ◽  
Electrical Breakdown

Theoretical study on the radical reaction mechanism in the cross-linking process of polyethylene

RSC Advances ◽  
2015 ◽  
Vol 5 (110) ◽  
pp. 90343-90353 ◽  
Author(s):  
Hui Zhang ◽  
Yan Shang ◽  
Mingxia Li ◽  
Hong Zhao ◽  
Xuan Wang ◽  
...  
Keyword(s):  
Reaction Mechanism ◽  
High Voltage ◽  
Theoretical Study ◽  
Breakdown Strength ◽  
Electrical Breakdown ◽  
Radical Reaction ◽  
Voltage Stabilizer ◽  
Cross Linking ◽  
Insulation Material ◽  
Electrical Breakdown Strength

The mechanism of the valerophenone voltage stabilizer for increasing the electrical breakdown strength of cross-linked polyethylene is expected to provide reliable information to prepare insulation material for high voltage cables up to 500 kV.

Electromechanical Bistable Behavior of a Novel Dielectric Elastomer Actuator

2013 ◽  
Vol 81 (4) ◽  
Author(s):  
Tiefeng Li ◽  
Zhanan Zou ◽  
Guoyong Mao ◽  
Shaoxing Qu
Keyword(s):  
High Voltage ◽  
Electrical Breakdown ◽  
Mechanical Energy ◽  
Electrical Energy ◽  
High Voltage Pulse ◽  
Dielectric Elastomer ◽  
Small Scale ◽  
Practical Applications ◽  
Design And Optimization ◽  
Bistable Structure

High voltage is required for the existing dielectric elastomer (DE) actuators to convert electrical energy to mechanical energy. However, maintaining high voltage on DE membranes can cause various failures, such as current leakage and electrical breakdown, which limits their practical applications, especially in small-scale devices. To overcome the above drawback of DE actuators, this paper proposes a new actuation method using DE membranes with a properly designed bistable structure. Experiment shows that the actuator only requires a high-voltage pulse to drive the structure forward and backward with electromechanical snap-through instability. The actuator can maintain its stroke when the voltage is removed. An analytical model based on continuum mechanics is developed, showing good agreement with experiment. The study may inspire the design and optimization of DE transducers.

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