Bias voltage-dependent low field spin transport properties of Fe3O4–PEG with different particle sizes

2016 ◽  
Vol 30 (23) ◽  
pp. 1650301
Author(s):  
Chunlong Xu ◽  
Zhen Wang ◽  
Lei Wang ◽  
Gang Shi ◽  
Zhaoyang Hou ◽  
...  
Keyword(s):  
Transport Properties ◽  
Bias Voltage ◽  
Room Temperature ◽  
Spin Transport ◽  
Tunneling Effect ◽  
Particle Sizes ◽  
Low Field ◽  
Spin Dependent Transport ◽  
Voltage Dependent ◽  
Dependent Transport

Spin-dependent transport properties of Fe3O4 spheres with diameters from 200 nm to 900 nm have been investigated and polyethylene glycol (PEG) exists on the surface of Fe3O4 particles. The nonlinear I–V curve became obvious with the increase of Fe3O4 diameter, which indicated the tunneling barrier height decreases with the increasing diameter. The magnetoresistance (MR) can reach −13% with an applied low field of 0.2 T at room temperature. With the diameter increase, the MR decreases and the required applied field increases. Moreover, the decrease of MR with the bias voltage increase can be attributed to the spin-dependent tunneling effect through the insulating surface layer of Fe3O4 and PEG.

Spin transport in epitaxial Fe3O4/GaAs lateral structured device

2022 ◽  
Author(s):  
Zhaocong Huang ◽  
Wenqing Liu ◽  
Jian Liang ◽  
Qingjie Guo ◽  
Ya Zhai ◽  
...  
Keyword(s):  
Data Storage ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Spin Transport ◽  
Spintronic Devices ◽  
Spin Dependent Transport ◽  
Effect Transistor ◽  
Dependent Transport ◽  
Further Development

Abstract Research in the spintronics community has been intensively stimulated by the proposal of the spin field-effect transistor (SFET), which has the potential for combining the data storage and process in a single device. Here we report the spin dependent transport on a Fe3O4/GaAs based lateral structured device. Parallel and antiparallel states of two Fe3O4 electrodes are achieved. A clear MR loop shows the perfect butterfly shape at room temperature, of which the intensity decreases with the reducing current, showing the strong bias-dependence. Understanding the spin dependent transport properties in this architecture has strong implication in further development of the spintronic devices for room-temperature SFET.

The Enhanced Magnetoresistance Effect of La0.67Sr0.33MnO3 with Pentavalent Ions Addition

2011 ◽  
Vol 675-677 ◽  
pp. 1105-1108
Author(s):  
Bao Xin Huang ◽  
Jun Hua Wang ◽  
Zhen Hua Wang ◽  
Ke Zheng Chen ◽  
Yi Hua Liu ◽  
...  
Keyword(s):  
Room Temperature ◽  
Molar Ratio ◽  
Second Phase ◽  
Doping Amount ◽  
Low Field ◽  
Spin Dependent Transport ◽  
Nb Dopant ◽  
Mr Effect ◽  
Dependent Transport ◽  
Calcined Temperature

The magnetic and electrical properties of La0.67Sr0.33MnO3 ( LSMO ) are influenced very much by the Nb dopant. However, this doping effect is restricted by the limited Nb solution into LSMO due to the low calcined temperature. As a result, a second phase LaNbO4 appears in our samples. Enhancements of the low-field magnetoresistance (LFMR) were observed both at 77 K and room temperature in the manganite system prepared by doping Nb2O5 into LSMO powders. The doping amount x of Nb ions ranges from 0-10 % molar ratio. The MR ratios at 77 K with H = 1 T and H = 0.1 T are 33.8 % and 24 % for the x = 0.07 doped sample, respectively. A MR effect up to 9 % was also found for the sample with x = 0.05 at room temperature, which is 2.2 times as large as that for LSMO (4.1%). The spin dependent tunneling and scattering at the interfaces of the grain boundaries are responsible for the LFMR while the high field magnetoresistance (HFMR) originates from the spin dependent transport related to noncollinear spin structure at the interfaces.

Spin transport properties of 1,4,5,8-naphthalenetetracarboxylic dianhydride based molecular devices

2019 ◽  
Vol 21 (44) ◽  
pp. 24650-24658 ◽  
Author(s):  
Wenjing Wang ◽  
Denglei Gao ◽  
Yucheng Huang ◽  
Tao Zhou ◽  
Sufan Wang
Keyword(s):  
Transport Properties ◽  
Spin Transport ◽  
Graphene Nanoribbon ◽  
Molecular Devices ◽  
Spin Dependent Transport ◽  
Dependent Transport ◽  
Carbon Based

NTCDA carbon based molecular devices have been designed, and spin-dependent transport properties via carbon and oxygen linkage to the zigzag graphene nanoribbon electrodes have been investigated.

scholarly journals Strain Investigation on Spin-Dependent Transport Properties of γ-Graphyne Nanoribbon Between Gold Electrodes

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Yun Li ◽  
Xiaobo Li ◽  
Shidong Zhang ◽  
Liemao Cao ◽  
Fangping Ouyang ◽  
...  
Keyword(s):  
Transport Properties ◽  
High Performance ◽  
Density Functional ◽  
Strain Engineering ◽  
Molecular Junctions ◽  
Spin Splitting ◽  
Functional Theory ◽  
Spin Dependent Transport ◽  
The Density Functional Theory ◽  
Dependent Transport

AbstractStrain engineering has become one of the effective methods to tune the electronic structures of materials, which can be introduced into the molecular junction to induce some unique physical effects. The various γ-graphyne nanoribbons (γ-GYNRs) embedded between gold (Au) electrodes with strain controlling have been designed, involving the calculation of the spin-dependent transport properties by employing the density functional theory. Our calculated results exhibit that the presence of strain has a great effect on transport properties of molecular junctions, which can obviously enhance the coupling between the γ-GYNR and Au electrodes. We find that the current flowing through the strained nanojunction is larger than that of the unstrained one. What is more, the length and strained shape of the γ-GYNR serves as the important factors which affect the transport properties of molecular junctions. Simultaneously, the phenomenon of spin-splitting occurs after introducing strain into nanojunction, implying that strain engineering may be a new means to regulate the electron spin. Our work can provide theoretical basis for designing of high performance graphyne-based devices in the future.

scholarly journals Nanodevices engineering and spin transport properties of MnBi2Te4 monolayer

2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Yipeng An ◽  
Kun Wang ◽  
Shijing Gong ◽  
Yusheng Hou ◽  
Chunlan Ma ◽  
...  
Keyword(s):  
Transport Properties ◽  
Field Effect Transistors ◽  
First Principles Calculations ◽  
Next Generation ◽  
Strong Response ◽  
The Road ◽  
Spin Dependent Transport ◽  
2D Structure ◽  
Filtering Effect ◽  
Dependent Transport

AbstractTwo-dimensional (2D) magnetic materials are essential for the development of the next-generation spintronic technologies. Recently, layered van der Waals (vdW) compound MnBi2Te4 (MBT) has attracted great interest, and its 2D structure has been reported to host coexisting magnetism and topology. Here, we design several conceptual nanodevices based on MBT monolayer (MBT-ML) and reveal their spin-dependent transport properties by means of the first-principles calculations. The pn-junction diodes and sub-3-nm pin-junction field-effect transistors (FETs) show a strong rectifying effect and a spin filtering effect, with an ideality factor n close to 1 even at a reasonably high temperature. In addition, the pip- and nin-junction FETs give an interesting negative differential resistive (NDR) effect. The gate voltages can tune currents through these FETs in a large range. Furthermore, the MBT-ML has a strong response to light. Our results uncover the multifunctional nature of MBT-ML, pave the road for its applications in diverse next-generation semiconductor spin electric devices.

Oxygen manipulation at the Co/SiO2 interface and its effect on spin-dependent transport properties

2020 ◽  
Vol 126 (7) ◽  
Author(s):  
Qian Liu ◽  
Yaqiang Tian ◽  
Xiaoping Zheng ◽  
Liansheng Chen ◽  
Yuqing Zhao ◽  
...  
Keyword(s):  
Transport Properties ◽  
Spin Dependent Transport ◽  
Dependent Transport

Tunneling magnetoresistance and light modulation in Fe4N(La2/3Sr1/3MnO3)/C60/Fe4N single molecule magnetic tunnel junctions

2020 ◽  
Vol 8 (9) ◽  
pp. 3137-3146 ◽  
Author(s):  
Xuefei Han ◽  
Wenbo Mi ◽  
Dunhui Wang
Keyword(s):  
Transport Properties ◽  
Single Molecule ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Tunneling Magnetoresistance ◽  
Light Modulation ◽  
Spin Dependent Transport ◽  
Dependent Transport

Spin-dependent transport properties and light modulation of Fe4N/C60/Fe4N and LSMO/C60/Fe4N single molecule magnetic tunnel junctions.

Effect of MgO Barrier Insertion on Spin-Dependent Transport Properties of CoFe/n-GaAs Heterojunctions

2012 ◽  
Vol 51 (2) ◽  
pp. 02BM01 ◽  
Author(s):  
Takafumi Akiho ◽  
Tetsuya Uemura ◽  
Masanobu Harada ◽  
Ken-ichi Matsuda ◽  
Masafumi Yamamoto
Keyword(s):  
Transport Properties ◽  
Spin Dependent Transport ◽  
Dependent Transport

2D Mn2C6Se12 and Mn2C6S6Se6: Intrinsic Room-Temperature Dirac Spin Gapless Semiconductors and Perfect Spin Transport Properties

2020 ◽  
Vol 124 (29) ◽  
pp. 16127-16135 ◽  
Author(s):  
Xuming Wu ◽  
Yulin Feng ◽  
Si Li ◽  
Boqun Zhang ◽  
Guoying Gao
Keyword(s):  
Transport Properties ◽  
Room Temperature ◽  
Spin Transport ◽  
Spin Gapless Semiconductors ◽  
Dirac Spin

The Spin Transport of the Coblt Dimers with Different Directions

2014 ◽  
Vol 543-547 ◽  
pp. 3947-3950
Author(s):  
Shi Wei Ren
Keyword(s):  
Transport Properties ◽  
Spin Polarization ◽  
Density Of States ◽  
Bias Voltage ◽  
Spin Transport ◽  
First Principle ◽  
Transport Direction ◽  
Spin Polarized ◽  
Analysis Calculation

In this paper, the spin transport properties of the coblt dimers parrallel to the transport direction and perpendicular to ransprot direction are investigated by using the first principle analysis. Calculation shows that both the coblt dimers parrallel to the transport direction and perpendicular to ransprot direction give obvious spin polarized density of states and current. It is found that the dimer parrallel to the transport direction have larger spin polarization current.The spin polarized efficiency for the parrallel dimer increase steadily with the increase of the bias voltage. But the the spin polarization for the transverse dimer changes greatly.

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