Morphology dependent optical properties of ZnO/SiNWs nanocomposites

MRS Advances ◽  
2017 ◽  
Vol 2 (58-59) ◽  
pp. 3667-3672
Author(s):  
Aliaksandr Sharstniou ◽  
Stanislau Niauzorau ◽  
Eugene Chubenko ◽  
Bruno P. Azeredo ◽  
Vitaly Bondarenko
Keyword(s):  
Wavelength Range ◽  
Silicon Nanowires ◽  
Annealing Temperature ◽  
Charge Carriers ◽  
Ambient Atmosphere ◽  
Transparent Conductive Electrode ◽  
Heterojunction Solar Cells ◽  
Specular Reflectance ◽  
Shell Nanostructures ◽  
Metal Assisted Chemical Etching

ABSTRACT Zinc oxide/silicon nanowires (ZnO/SiNWs) nanocomposites is a promising material for heterojunction solar cells. They combine the low-reflectivity of SiNWs, where photogenerated charge carriers are produced and harvested, and the high transparency of ZnO, which serves as a functional transparent conductive electrode. In this paper, we present a study of the anti-reflective properties of ZnO/SiNWs core-shell nanostructures. SiNWs were fabricated by a two-step metal-assisted chemical etching and coated with ZnO by electrochemical deposition. Particularly, the change in the specular reflectance of ZnO/SiNWs nanocomposites as a function of thermal annealing temperature under ambient atmosphere is investigated. First, it was shown that the reflectance in the wavelength range of 400-1000 nm of as-synthesized ZnO/SiNWs nanocomposites increases when compared to the bare SiNWs formed from Si wafers with resistivity of 0.3 and 12 Ω∙cm by an 0.51 % and 0.47 %, respectively. Second, it was found that annealed ZnO/SiNWs had a 0.26 % and 0.17 % lower reflectance in the wavelength range of 400-1000 nm than as-synthesized ZnO/SiNWs and yet higher than bare SiNWs. Potential causes such results are discussed in the context of existing literature.

scholarly journals Effect of Phosphorus Doping on Photoinduced Thermal Processes in Silicon Nanowires

2021 ◽  
Vol 2058 (1) ◽  
pp. 012006
Author(s):  
N S Pokryshkin ◽  
E A Lipkova ◽  
A A Eliseev ◽  
A I Efimova ◽  
V Yu Timoshenko
Keyword(s):  
Silicon Nanowires ◽  
Crystalline Silicon ◽  
Optoelectronic Devices ◽  
Charge Carriers ◽  
Thermal Processes ◽  
Si Substrate ◽  
Phosphorus Doping ◽  
Boron Doped ◽  
Doping Effects ◽  
Metal Assisted Chemical Etching

Abstract We report on the effect of phosphorus doping of silicon nanowires (SiNWs) on the photoinduced heating processes. SiNWs samples were prepared by metal-assisted chemical etching of low boron-doped crystalline silicon (c-Si) wafers followed with thermo-diffusional doping with phosphorous (P) up to 1020 cm-3. We establish that the P-doping (n-type) results in effective heat conduction along SiNWs toward the c-Si substrate during laser heating. Partial phase transition in P-doped SiNWs under intense photoheating was detected by means of Raman spectroscopy and photoluminescence. The observed doping effects were explained by a contribution of charge carriers (electrons) to the heat distribution along SiNWs and partial screening of the crystal lattice potential. The obtained results can be useful for the development of new photonic and optoelectronic devices based on SiNWs.

scholarly journals Replacing Metals with Oxides in Metal-Assisted Chemical Etching Enables Direct Fabrication of Silicon Nanowires by Solution Processing

Nano Letters ◽  
2021 ◽  
Vol 21 (5) ◽  
pp. 2310-2317
Author(s):  
Maxime Gayrard ◽  
Justine Voronkoff ◽  
Cédric Boissière ◽  
David Montero ◽  
Laurence Rozes ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Chemical Etching ◽  
Solution Processing ◽  
Direct Fabrication ◽  
Metal Assisted Chemical Etching

scholarly journals Passivation of high aspect ratio silicon nanowires by using catalytic chemical vapor deposition for radial heterojunction solar cell application

RSC Advances ◽  
2017 ◽  
Vol 7 (71) ◽  
pp. 45101-45106 ◽  
Author(s):  
Gangqiang Dong ◽  
Yurong Zhou ◽  
Hailong Zhang ◽  
Fengzhen Liu ◽  
Guangyi Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Aspect Ratio ◽  
Silicon Nanowires ◽  
Vapor Deposition ◽  
High Aspect Ratio ◽  
Chemical Etching ◽  
Chemical Vapor ◽  
Solar Cell Application ◽  
Catalytic Chemical Vapor Deposition ◽  
Metal Assisted Chemical Etching

High aspect ratio silicon nanowires (SiNWs) prepared by metal-assisted chemical etching were passivated by using catalytic chemical vapor deposition (Cat-CVD).

Light-emitting silicon nanowires obtained by metal-assisted chemical etching

2017 ◽  
Vol 32 (4) ◽  
pp. 043004 ◽  
Author(s):  
Alessia Irrera ◽  
Maria Josè Lo Faro ◽  
Cristiano D’Andrea ◽  
Antonio Alessio Leonardi ◽  
Pietro Artoni ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Chemical Etching ◽  
Light Emitting ◽  
Metal Assisted Chemical Etching

Wafer-Scale, Highly-Ordered Silicon Nanowires Produced by Step-and-Flash Imprint Lithography and Metal-Assisted Chemical Etching

2012 ◽  
Vol 1512 ◽  
Author(s):  
Jian-Wei Ho ◽  
Qixun Wee ◽  
Jarrett Dumond ◽  
Li Zhang ◽  
Keyan Zang ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Cross Sections ◽  
Silicon Nanowires ◽  
High Aspect Ratio ◽  
Chemical Etching ◽  
Semiconductor Device ◽  
Imprint Lithography ◽  
Wafer Level ◽  
Conventional Photolithography ◽  
Metal Assisted Chemical Etching

ABSTRACTA combinatory approach of Step-and-Flash Imprint Lithography (SFIL) and Metal-Assisted Chemical Etching (MacEtch) was used to generate near perfectly-ordered, high aspect ratio silicon nanowires (SiNWs) on 4" silicon wafers. The ordering and shapes of SiNWs depends only on the SFIL nanoimprinting mould used, thereby enabling arbitary SiNW patterns not possible with nanosphere and interference lithography (IL) to be generated. Very densely packed SiNWs with periodicity finer than that permitted by conventional photolithography can be produced. The height of SiNWs is, in turn, controlled by the etching duration. However, it was found that very high aspect ratio SiNWs tend to be bent during processing. Hexagonal arrays of SiNW with circular and hexagonal cross-sections of dimensions 200nm and less were produced using pillar and pore patterned SFIL moulds. In summary, this approach allows highlyordered SiNWs to be fabricated on a wafer-level basis suitable for semiconductor device manufacturing.

scholarly journals Temperature Dependence of Hall Mobility AndCarrier Concentration of pb0.55S0.45 Films

2009 ◽  
Vol 6 (1) ◽  
pp. 129-134
Author(s):  
Baghdad Science Journal
Keyword(s):  
Hall Mobility ◽  
Room Temperature ◽  
Annealing Temperature ◽  
High Vacuum ◽  
Life Time ◽  
Mean Free Path ◽  
Charge Carriers ◽  
Evaporation Technique ◽  
Carrier Life Time ◽  
Type Conduction

Measurements of Hall effect properties at different of annealing temperature have been made on polycrystalline Pb0.55S0.45 films were prepared at room temperature by thermal evaporation technique under high vacuum 4*10-5 torr . The thickness of the film was 2?m .The carrier concentration (n) was observed to decrease with increasing the annealing temperature. The Hall measurements showed that the charge carriers are electrons (i.e n-type conduction). From the observed dependence on the temperature, it is found that the Hall mobility (µH), drift velocity ( d) carrier life time ( ), mean free path (?) were increased with increasing annealing temperature

Effects of annealing temperature and ambient atmosphere on the structure and photoluminescence of BCNO phosphors

2013 ◽  
Vol 143 ◽  
pp. 343-348 ◽  
Author(s):  
Fang Lu ◽  
Xinghua Zhang ◽  
Zunming Lu ◽  
Xuewen Xu ◽  
Chengchun Tang
Keyword(s):  
Annealing Temperature ◽  
Ambient Atmosphere
Sign in / Sign up

Export Citation Format

Share Document