Reaction study of cobalt and silicon nitride

1993 ◽  
Vol 8 (9) ◽  
pp. 2354-2361 ◽  
Author(s):  
Tue Nguyen ◽  
Herbert L. Ho ◽  
David E. Kotecki ◽  
Tai D. Nguyen
Keyword(s):  
Silicon Nitride ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Nitride Film ◽  
Cobalt Silicide ◽  
Physical Damage ◽  
Reaction Study ◽  
Chemical Vapor Deposited ◽  
Pressure Chemical

The interaction of cobalt (Co) and low-pressure chemical-vapor-deposited silicon nitride (LPCVD Si3N4) during anneals from 200 °C−1000 °C in vacuum, Ar, and Ar–H2 ambient (95% Ar and 5% H2) has been studied. After the anneals, reduction of Si3N4 by Co to form cobalt silicide and cobalt nitride phases has been observed. Reduction of Si3N4 initially occurs at 600 °C; however, gross physical damage occurs at temperatures of ∼900 °C in Ar. The addition of hydrogen to the ambient enhances the onset of physical damage to the nitride film by as much as 200 °C. Mechanisms governing the Co/Si3N4 reaction have been proposed.

Diffusion of hydrogen in low‐pressure chemical vapor deposited silicon nitride films

1990 ◽  
Vol 56 (25) ◽  
pp. 2530-2532 ◽  
Author(s):  
W. M. Arnold Bik ◽  
R. N. H. Linssen ◽  
F. H. P. M. Habraken ◽  
W. F. van der Weg ◽  
A. E. T. Kuiper
Keyword(s):  
Silicon Nitride ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Silicon Nitride Films ◽  
Chemical Vapor Deposited ◽  
Pressure Chemical ◽  
Diffusion Of Hydrogen

In Situ Contamination Control Investigation of Silicon Nitride Low Pressure Chemical Vapor Deposition Process in Vertical Thermal Reactors

1992 ◽  
Vol 259 ◽  
Author(s):  
Mansour Moinpour ◽  
K. Bohannan ◽  
M. Shenasa ◽  
A. Sharif ◽  
G. Guzzo ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Process Parameters ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Contamination Control ◽  
Pressure Chemical

ABSTRACTA contamination control study of a Silicon Valley Group Thermco Systems Vertical Thermal Reactor(VTR) is presented. Trace elements of contaminants such as water vapor and oxygen have been shown to significantly affect the integrity of the silicon nitride film deposited by the low pressure chemical vapor deposition (LPCVD) process. This study documented the effects of process parameters on gaseous contamination levels, i.e., O2 and H2O vapor. Starting with a baseline process, the effects of an excursion of pre-deposition temperature ramp-up and stabilization condition, wafer load/unload and various post deposition conditions were explored. An axial profile of moisture and oxygen levels along the wafer load was obtained using Linde's Low Pressure Reactor Analysis(LPRAS) methodology. In addition, other process parameters such as gas flow rates during load and unload of wafers, pre-deposition N2 purge and process tube exposure time to ambient environment were- investigated. The wafers were analyzed for contaminants on the wafer surface or in the deposited silicon nitride film using FTIR and Auger spectroscopy techniques. They showed low levels of Si-O and no measurable Si-H or N-H bonds.

Positron annihilation study of low pressure chemical vapor deposited silicon nitride films

1991 ◽  
Vol 59 (14) ◽  
pp. 1687-1689 ◽  
Author(s):  
R. A. Hakvoort ◽  
H. Schut ◽  
A. van Veen ◽  
W. M. Arnold Bik ◽  
F. H. P. M. Habraken
Keyword(s):  
Silicon Nitride ◽  
Positron Annihilation ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Silicon Nitride Films ◽  
Chemical Vapor Deposited ◽  
Pressure Chemical ◽  
Positron Annihilation Study

Electrical properties of low pressure chemical vapor deposited silicon nitride thin films for temperatures up to 650 °C

2009 ◽  
Vol 105 (3) ◽  
pp. 033714 ◽  
Author(s):  
R. M. Tiggelaar ◽  
A. W. Groenland ◽  
R. G. P. Sanders ◽  
J. G. E. Gardeniers
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Electrical Properties ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Chemical Vapor Deposited ◽  
Pressure Chemical
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