Diffusion of hydrogen in low‐pressure chemical vapor deposited silicon nitride films

1990 ◽  
Vol 56 (25) ◽  
pp. 2530-2532 ◽  
Author(s):  
W. M. Arnold Bik ◽  
R. N. H. Linssen ◽  
F. H. P. M. Habraken ◽  
W. F. van der Weg ◽  
A. E. T. Kuiper
Keyword(s):  
Silicon Nitride ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Silicon Nitride Films ◽  
Chemical Vapor Deposited ◽  
Pressure Chemical ◽  
Diffusion Of Hydrogen

Positron annihilation study of low pressure chemical vapor deposited silicon nitride films

1991 ◽  
Vol 59 (14) ◽  
pp. 1687-1689 ◽  
Author(s):  
R. A. Hakvoort ◽  
H. Schut ◽  
A. van Veen ◽  
W. M. Arnold Bik ◽  
F. H. P. M. Habraken
Keyword(s):  
Silicon Nitride ◽  
Positron Annihilation ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Silicon Nitride Films ◽  
Chemical Vapor Deposited ◽  
Pressure Chemical ◽  
Positron Annihilation Study

Characterization of low‐pressure chemical‐vapor‐deposited and thermally‐grown silicon nitride films

1982 ◽  
Vol 53 (1) ◽  
pp. 404-415 ◽  
Author(s):  
F. H. P. M. Habraken ◽  
A. E. T. Kuiper ◽  
A. v. Oostrom ◽  
Y. Tamminga ◽  
J. B. Theeten
Keyword(s):  
Silicon Nitride ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Silicon Nitride Films ◽  
Chemical Vapor Deposited ◽  
Pressure Chemical ◽  
Thermally Grown

Reaction study of cobalt and silicon nitride

1993 ◽  
Vol 8 (9) ◽  
pp. 2354-2361 ◽  
Author(s):  
Tue Nguyen ◽  
Herbert L. Ho ◽  
David E. Kotecki ◽  
Tai D. Nguyen
Keyword(s):  
Silicon Nitride ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Nitride Film ◽  
Cobalt Silicide ◽  
Physical Damage ◽  
Reaction Study ◽  
Chemical Vapor Deposited ◽  
Pressure Chemical

The interaction of cobalt (Co) and low-pressure chemical-vapor-deposited silicon nitride (LPCVD Si3N4) during anneals from 200 °C−1000 °C in vacuum, Ar, and Ar–H2 ambient (95% Ar and 5% H2) has been studied. After the anneals, reduction of Si3N4 by Co to form cobalt silicide and cobalt nitride phases has been observed. Reduction of Si3N4 initially occurs at 600 °C; however, gross physical damage occurs at temperatures of ∼900 °C in Ar. The addition of hydrogen to the ambient enhances the onset of physical damage to the nitride film by as much as 200 °C. Mechanisms governing the Co/Si3N4 reaction have been proposed.

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