Preparation of Pb(Zr0.52Ti0.48)O3 thin films on Pt/RuO2 double electrode by a new sol-gel route

1997 ◽  
Vol 12 (6) ◽  
pp. 1576-1581 ◽  
Author(s):  
Seung-Hyun Kim ◽  
Yong-Soo Choi ◽  
Chang-Eun Kim ◽  
Young-Jei Oh
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Leakage Current ◽  
Applied Voltage ◽  
Marked Improvement ◽  
Sol Gel ◽  
Gel Method ◽  
Pzt Thin Film ◽  
Double Electrode ◽  
Leakage Characteristics

Pb(Zr0.52Ti0.48)O3 (PZT) thin film on Pt/RuO2 double electrode was successfully prepared by using a new alkoxide-alkanolamine, sol-gel method. It was observed that the use of Pt/RuO2 double electrode reduced leakage current, resulting in a marked improvement in the leakage characteristics and more reliable capacitors. Typical P-E hysteresis behavior was observed even at low applied voltage of 5 V, manifesting greatly improved remanence and coercivity. Fatigue and breakdown characteristics, measured at 5 V, showed stable behavior, and no degradation in polarization was observed up to 1011 cycles.

A Study on the Piezoelectric Properties of PZT and Doped PZT Thin Films by Sol-Gel Method

2010 ◽  
Vol 663-665 ◽  
pp. 650-653
Author(s):  
Jin Moo Byun ◽  
Jeong Sun Han ◽  
Jae Hyoung Park ◽  
Seong Eui Lee ◽  
Hee Chul Lee
Keyword(s):  
Thin Films ◽  
Piezoelectric Coefficient ◽  
Energy Harvester ◽  
Sol Gel ◽  
Pure Perovskite Structure ◽  
Pzt Thin Films ◽  
Gel Method ◽  
Sol Gel Method ◽  
Si Substrates ◽  
Pzt Thin Film

This study examined the effect of crystalline orientation and dopants such as Nb and Zn on the piezoelectric coefficient of sol-gel driven Pb1(Zr0.52Ti0.48)O3(PZT) and doped PZT thin films. Crack-free 1-μm-thick PZT and doped PZT thin films prepared by using 2-Methoxyethanol-based sol-gel method were fabricated on Pt/Ti/SiO2/Si substrates. The highly (111) oriented PZT thin films of pure perovskite structure could be obtained by controlling various parameters such as a PbTiO3 seed layer and a concentration of sol-gel solution. The Nb-Zn doped PZT thin films exhibited high piezoelectric coefficient which was about 50 % higher than that of undoped PZT thin film. The highest measured piezoelectric coefficient was 240 pC/N, which could be applicable to piezoelectrically operated MEMS actuator, sensor, or energy harvester devices.

Magnetic, ferroelectric and leakage current properties of gadolinium doped bismuth ferrite thin films by sol–gel method

2015 ◽  
Vol 381 ◽  
pp. 127-130 ◽  
Author(s):  
Hone-Zern Chen ◽  
Ming-Cheng Kao ◽  
San-Lin Young ◽  
Jun-Dar Hwang ◽  
Jung-Lung Chiang ◽  
...  
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Bismuth Ferrite ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method ◽  
Ferrite Thin Films

Photocatalytic Activities of Ce3+-Doped TiO2 Thin Films Prepared by Sol-Gel Method

2011 ◽  
Vol 239-242 ◽  
pp. 1850-1853
Author(s):  
Shu Kai Zheng
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Photocatalytic Activity ◽  
Sol Gel ◽  
Atomic Ratio ◽  
Gel Method ◽  
Sol Gel Method ◽  
Annealing Temperatures ◽  
Glass Slides ◽  
Photocatalytic Activities

A series of TiO2 thin films with and without Ce3+ doping were successfully obtained on microscope glass slides by sol-gel method. The photocatalytic activities of the pure TiO2 and Ce3+-doped TiO2 thin films were evaluated by the degradation of rhodamine B solution. The effects of both Ce3+ contents and annealing temperatures on the photocatalytic activities of the samples were examined. The results indicated that the TiO2 thin film with an atomic ratio of Ti:Ce=5:1 annealed at 300°C had a higher photocatalytic activity among the samples.

Effects of Buffer Layer on the Fabrication and Characteristics of Ferroelectric Thin Films

1997 ◽  
Vol 493 ◽  
Author(s):  
Han Wook Song ◽  
Joon Sung Lee ◽  
Dae-Weon Kim ◽  
Kwang Ho Kim ◽  
Tae-Hyun Sung ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Buffer Layer ◽  
Sol Gel ◽  
Optimum Thickness ◽  
Si Substrate ◽  
Barrier Effects ◽  
Pzt Thin Film ◽  
Different Temperatures ◽  
Gel Technique

ABSTRACTMgO thin films were deposited on Si(100) substrate with different temperatures from 500 °C to 800 °C and different e-beam powers from 25W to 100W using e-beam evaporation method. Pb(Zr0.53Ti0.47)O3(PZT) thin films were deposited on MgO/Si(100) substrates with different drying temperatures from 190 °C to 310 °C using sol-gel technique. If there were no buffer layer between the PZT thin film and Si substrate, the peaks corresponding to perovskite PZT phase were not observed. However the buffer layer were inserted between the PZT thin film and Si substrate, it was possible to fabricate perovskite PZT phase. The barrier effects of MgO thin film to the interdiffusion of Pb were investigated by AES study. Optimum thickness of MgO at which PZT/MgO/Si structure shows P-E hysteresis was calculated, and the hysteresis was tested for PZT/MgO/Si structures with different MgO thicknesses.

Preparation and Characterization of Li4/3Ti5/3O4 Thin Films by Sol-gel Method

2006 ◽  
Vol 972 ◽  
Author(s):  
C. Hu ◽  
W. Zhang ◽  
H. Hao ◽  
M. H. Cao ◽  
S. J. Lai ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sol Gel ◽  
High Capacity ◽  
X Ray Diffraction ◽  
Gel Method ◽  
Sol Gel Method ◽  
Atomic Force ◽  
Good Crystallinity

AbstractIn the study Li4/3Ti5/3O4 thin films were deposited on Pt substrates by sol-gel method using a spin coator. The coated films are dried at 310-360 °C, and then annealed at 500-800 °C for 30min. The prepared films were characterized by X-ray diffraction, atomic force microscope and scanning electron microscope. The results indicated that the prepared film belonged to a spinel structure and had a uniform morphology. Electrochemical properties of the prepared electrode films were evaluated by using a discharge and charge test. From these results, it can be showed that the thin film electrode annealed at 700 °C exhibited good crystallinity, smooth surface morphology, high capacity, and good rechargeability. Therefore, This film was therefore suitable for use as an anode for thin-film microbatteries.

Development of Multi-Layered Composite PZT Thin Films for Active Sliders in Hard Disk Drives

2002 ◽  
Author(s):  
Norio Tagawa ◽  
Ken-ichi Kitamura ◽  
Atsunobu Mori
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sol Gel ◽  
Hard Disk Drives ◽  
Hard Disk ◽  
Layered Composite ◽  
The Novel ◽  
Disk Drives ◽  
Pzt Thin Films ◽  
Pzt Thin Film

This paper describes the development of novel PZT thin films for active sliders in hard disk drives. So far, it is common that single-layered thin films are used as micro-actuators for conventional PZT thin films such as sol-gel or sputtered thin films. In this study, however, the novel composite PZT thin films are developed. The feature is that sol-gel PZT thin film is deposited on sputtered PZT thin film fabricated on Pt/Ti bottom electrode. These multilayered composite PZT thin films are found to have the higher (111) preferred orientation as well as better P-E hysteresis loop characteristics than not only sol-gel PZT thin films but also sputtered PZT thin films. Furthermore, the piezoelectric strain constant d31 for the novel PZT thin films is identified to be 189 × 10−12m/V. This value is 2.0 times higher than that for conventional PZT thin films and it is found that the novel PZT thin films have good piezoelectric properties.

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