(001)-Oriented LaNiO3 Bottom Electrodes and (001)-Textured Ferroelectric Thin Films on LaNiO3

AbstractIn this work, highly (001)pc-oriented thin films of LaNiO3 (LNO) were deposited by DC magnetron sputtering onto Si substrates (pc = pseudocubic indices). The target powder was prepared using a molten salt technique with Na2CO3 as a flux. The final target density was greater than 85% of theoretical density. The best results were obtained when sputtering was carried out at a power of 186 W and a working pressure of 45 mtorr with a gas composition of 50% O2 + 50% Ar. The thickness of the deposited films was proportional to the sputtering time, and the growth rate was 300Å/hour. Highly (001)-oriented thin films of lead zirconate titanate Pb(Zr0.52Ti0.48)O3 (PZT) and Pb[(Mg1/3Nb2/3)0.7Ti0.3]O3 (PMN-PT) were fabricated by a sol-gel method on (001)-textured LNO metallic oxide electrodes. A remanent polarization of 12 μC/cm2 and d31 of -125 pC/N (assuming a Young's modulus of 35 GPa) were measured on the PMN-PT thin films with a thickness of 0.9 μm. This piezoelectric coefficient considerably exceeds that available from PZT films, and depends critically on the film orientation. Changes in the hysteresis loop due to externally applied stress will also be described.

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Rapid Thermal Processing of Ferroelectric Thin Films

MRS Proceedings ◽

10.1557/proc-224-305 ◽

1991 ◽

Vol 224 ◽

Cited By ~ 10

Author(s):

Zheng Wu ◽

Roberto Pascual ◽

C.V.R. Vasant Kumar ◽

David Amd ◽

Michael Sayer

Keyword(s):

Thin Films ◽

Lead Zirconate Titanate ◽

Thermal Processing ◽

Crystallization Behavior ◽

Sol Gel ◽

Rapid Thermal Processing ◽

Lead Zirconate ◽

Dielectric Constants ◽

Heating Rates ◽

Pzt Films

AbstractThe preparation of ferroelectric lead zirconate titanate (PZT) thin films by rapid thermal processing (RTP) is reported. The films were deposited by chemical sol gel and physical sputter techniques. The heating rate of RTP was found to have significant influence on the crystallization behavior. Faster heating rates lead to lowering of the crystallization temperature and reduction of grain size. PZT films were obtained with dielectric constants ~ 1000, remanent polarizations between 20 and 30μC/cm2, coercive fields 20 to 60kV/cm, and no significant fatigue for 109 to 1010 stressing cycles.

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EFFECT OF PRE-HEATING TEMPERATURE ON THE CHARACTERISTICS OF PZT THIN FILMS GROWN BY USING A TRIOL SOL–GEL ROUTE

Surface Review and Letters ◽

10.1142/s0218625x0700930x ◽

2007 ◽

Vol 14 (02) ◽

pp. 229-234

Author(s):

SARAWUT THOUNTOM ◽

MANOCH NAKSATA ◽

KENNETH MACKENZIE ◽

TAWEE TUNKASIRI

Keyword(s):

Thin Films ◽

Lead Zirconate Titanate ◽

Heating Temperature ◽

Ferroelectric Properties ◽

Sol Gel ◽

Hysteresis Loops ◽

Lead Zirconate ◽

Pzt Thin Films ◽

Pzt Films ◽

Ferroelectric Hysteresis

Lead zirconate titanate (PZT) films with compositions near the morphotropic phase boundary were fabricated on Pt (111)/ Ti / SiO 2/ Si (100) using the triol sol–gel method. The effect of the pre-heating temperature on the phase transformations, microstructures, electrical properties, and ferroelectric properties of the PZT thin films was investigated. Randomly oriented PZT thin films pre-heated at 400°C for 10 min and annealed at 600°C for 30 min showed well-defined ferroelectric hysteresis loops with a remnant polarization of 26.57 μC/cm2 and a coercive field of 115.42 kV/cm. The dielectric constant and dielectric loss of the PZT films were 621 and 0.0395, respectively. The microstructures of the thin films are dense, crack-free, and homogeneous with fine grains about 15–20 nm in size.

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Rapid Microwave Annealing of Amorphous Lead Zirconate Titanate Thin Films Deposited by Sol-Gel Method on LaNiO3 /SiO2 /Si Substrates

Journal of the American Ceramic Society ◽

10.1111/jace.12066 ◽

2012 ◽

Vol 96 (1) ◽

pp. 90-95 ◽

Cited By ~ 9

Author(s):

Y. N. Chen ◽

Z. J. Wang

Keyword(s):

Thin Films ◽

Lead Zirconate Titanate ◽

Sol Gel ◽

Lead Zirconate ◽

Gel Method ◽

Sol Gel Method ◽

Si Substrates ◽

Microwave Annealing ◽

Zirconate Titanate

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Sol-Gel Process and Properties of Textured Pb(Zr, Ti)O3 Films on Silicon Wafers

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.280-283.239 ◽

2007 ◽

Vol 280-283 ◽

pp. 239-242 ◽

Cited By ~ 1

Author(s):

Wen Gong ◽

Xiang Cheng Chu ◽

Jing Feng Li ◽

Zhi Lun Gui ◽

Long Tu Li

Keyword(s):

Thin Films ◽

Lead Zirconate Titanate ◽

Sol Gel ◽

Lead Zirconate ◽

Silicon Wafers ◽

Seeding Layer ◽

Pzt Thin Films ◽

Pzt Film ◽

Sol Gel Process ◽

Pzt Films

Lead zirconate titanate (PZT) thin films with a composition near the morphotropic phase boundary were deposited on silicon wafers by using a modified sol-gel method. Introducing a seeding layer between the interface of PZT film and platinum electrode controlled the texture of PZT films. The lead oxide seeding layer results in highly (001)-textured PZT film, while the titanium dioxide seeding layer results in (111)-textured one. SEM and XRD were used to characterize the PZT thin films. The ferroelectric and piezoelectric properties of the PZT films were evaluated and discussed in association with different preferential orientations.

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Rapid thermal processing of lead zirconate titanate thin films on Pt–GaAs substrates based on a novel 1,1,1-tris(hydroxymethyl)ethane sol-gel route

Journal of Materials Research ◽

10.1557/jmr.1999.0070 ◽

1999 ◽

Vol 14 (2) ◽

pp. 494-499 ◽

Cited By ~ 8

Author(s):

S. Arscott ◽

R. E. Miles ◽

J. D. Kennedy ◽

S. J. Milne

Keyword(s):

Thin Films ◽

Lead Zirconate Titanate ◽

Thermal Processing ◽

Sol Gel ◽

Rapid Thermal Processing ◽

Low Frequency ◽

Lead Zirconate ◽

Si Substrates ◽

Pzt Film ◽

Gaas Substrates

0.53Ti0.47)O3 have been prepared on platinized GaAs (Pt–GaAs) substrates using a new 1,1,1-tris(hydroxymethyl)ethane (THOME) based sol-gel technique. Rapid thermal processing (RTP) techniques were used to decompose the sol-gel layer to PZT in an effort to avoid problems of GayAs outdiffusion into the PZT. A crystalline PZT film was produced by firing the sol-gel coatings at 600 or 650 ° for a dwell time of 1 s using RTP. A single deposition of the precursor sol resulted in a 0.4 μm thick PZT film. X-ray diffraction measurements revealed that the films possessed a high degree of (111) preferred orientation. Measured average values of remanent polarization (Pr ) and coercive field (Ec) for the film annealed at 650 ° for 1 s were 24 μC/cm2 and 32 kV/cm, respectively, together with a low frequency dielectric constant and loss tangent at 1 kHz of 950 and 0.02. These values are comparable to those obtainable on platinized silicon (Pt–Si) substrates using conventional sol-gel methods, and are an improvement on PZT thin films prepared on platinized GaAs using an earlier sol-gel route based on 1,3-propanediol.

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Orientation control of sol-gel-derived lead zirconate titanate film by addition of polyvinylpyrrolidone

Journal of Materials Research ◽

10.1557/jmr.2005.0109 ◽

2005 ◽

Vol 20 (4) ◽

pp. 882-888 ◽

Cited By ~ 14

Author(s):

Gun-Tae Park ◽

Chee-Sung Park ◽

Jong-Jin Choi ◽

Hyoun-Ee Kim

Keyword(s):

Lead Zirconate Titanate ◽

Sol Gel ◽

Lead Zirconate ◽

Organic Residues ◽

Si Substrates ◽

Pzt Film ◽

Oriented Film ◽

Zirconate Titanate ◽

Nucleation Sites ◽

Pzt Films

Highly (100)- and (111)-oriented lead zirconate titanate (PZT) films with a thickness of 350 nm were deposited on platinized Si substrates through a single spinning of a PZT sol containing polyvinylpyrrolidone (PVP) as an additive. The crystallographic orientation of the film was strongly influenced by pyrolysis conditions after spin coating. When the spin-coated sol was pyrolyzed at temperatures above 320 °C for relatively long periods of time (>5 min), (111)-oriented film was formed after annealing at 700 °C for 10 min. On the other hand, when the same sol was pyrolyzed at 320 °C for short periods of time (<5 min), the film was strongly oriented to the (100) direction after annealing. Organic residues derived from PVP decomposition acted as nucleation sites for the (100) oriented grains during annealing after the pyrolysis. The effective d33 of the (100)-oriented PZT film (100 pC/N) was much higher than that of the (111)-oriented film (62 pC/N) with the same thickness.

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Effect of Pb Excess Content on Microstructure and Electrical Properties of Sol Gel Derived PZT Thin Films

MRS Proceedings ◽

10.1557/proc-596-229 ◽

1999 ◽

Vol 596 ◽

Cited By ~ 4

Author(s):

Zhan-jie Wang ◽

Ryutaro Maeda ◽

Kaoru Kikuchi

Keyword(s):

Electron Microscopy ◽

Thin Films ◽

Lead Zirconate Titanate ◽

Perovskite Phase ◽

Ferroelectric Properties ◽

Sol Gel ◽

Lead Zirconate ◽

Pzt Thin Films ◽

Starting Solution ◽

Pzt Films

AbstractLead zirconate titanate (PZT) thin films were fabricated by a three-step heat-treatment process which involves the addition of -10, 0 and 10 mol% excess Pb to the starting solution and spin coating onto Pt/Ti/SiO2/Si substrates. Crystalline phases as well as preferred orientations in PZT films were investigated by X-ray diffraction analysis (XRD). The microstructure and composition of the films were studied by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and electron probe microanalysis (EPMA), respectively. The well-crystallized perovskite phase and the (100) preferred orientation were obtained by adding 10% excess Pb to the starting solution. It was found that PZT films to which 10% excess Pb was added had better electric properties. The remanent polarization and the coercive field of this film were 34.8 μC/cm2 and 41.7 kV/cm, while the dielectric constant and loss values measured at 1 kHz were approximately 1600 and 0.04, respectively. Dielectric and ferroelectric properties were correlated to the microstructure of the films.

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Ion Beam Sputter Deposition Of Ferroelectric Oxide Thin Films

MRS Proceedings ◽

10.1557/proc-223-273 ◽

1991 ◽

Vol 223 ◽

Cited By ~ 1

Author(s):

Thomas M. Graettinger ◽

O. Auciello ◽

M. S. Ameen ◽

H. N. Al-Shareef ◽

K. Gifford ◽

...

Keyword(s):

Thin Films ◽

Lead Zirconate Titanate ◽

Growth Parameters ◽

Ion Beam ◽

Lead Zirconate ◽

Electro Optic ◽

Integrated Optical ◽

Pzt Films ◽

Ion Beam Sputter Deposition ◽

Ferroelectric Oxide

ABSTRACTFerroelectric oxide films have been studied for their potential application as integrated optical materials and nonvolatile memories. Electro-optic properties of potassium niobate (KNbO3) thin films have been measured and the results correlated to the microstructures observed. The growth parameters necessary to obtain single phase perovskite lead zirconate titanate (PZT) thin films are discussed. Hysteresis and fatigue measurements of the PZT films were performed to determine their characteristics for potential memory devices.

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Sol-Gel Derived PZT Thick Films with Nano-Sized Microstructure

MRS Proceedings ◽

10.1557/proc-748-u14.9 ◽

2002 ◽

Vol 748 ◽

Cited By ~ 1

Author(s):

C. L. Zhao ◽

Z. H. Wang ◽

W. Zhu ◽

O. K. Tan ◽

H. H. Hng

Keyword(s):

Lead Zirconate Titanate ◽

Electromechanical Coupling ◽

Thick Films ◽

Sol Gel ◽

Essential Element ◽

Processing Parameters ◽

Lead Zirconate ◽

Piezoelectric Response ◽

Coupling Coefficients ◽

Pzt Films

ABSTRACTLead zirconate titanate (PZT) films are promising for acoustic micro-devices applications because of their extremely high electromechanical coupling coefficients and excellent piezoelectric response. Thicker PZT films are crucial for these acoustic applications. A hybrid sol-gel technology has been developed as a new approach to realize simple and cost-effective fabrication of high quality PZT thick films. In this paper, PZT53/47 thick films with a thickness of 5–50 μm are successfully deposited on Pt-coated silicon wafer by using the hybrid sol-gel technology. The obtained PZT thick films are dense, crack-free, and have a nano-sized microstructure. The processing parameters of this technology have been evaluated. The microstructure of the film has been observed using field-emission scanning electron microscopy and the crystallization process has been monitored by the X-ray diffraction. The thick films thus made are good candidates for fabrication of piezoelectric diaphragm which will be an essential element of microspeaker and microphone arrays.

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