Characterization of NOx sensor using doped In2O3
2001 ◽
Vol 16
(5)
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pp. 1389-1395
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To develop a highly sensitive gas sensor monitoring NOx, various kinds of n-type semiconductors made of In2O3 were prepared, and the relations between doped elements and gas sensitivities or response times were studied. Consequently, it was found that the samples doped with less than 1 at.% alkali-earth metal components have high sensitivities and responsiveness. The gas-absorbing phenomena were investigated using highly sensitive thermal analysis. From the result, it was indicated that alkali-earth component-doped In2O3 materials have higher adsorption ability of NOx than pure In2O3 has.
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1962 ◽
Vol 65
(1)
◽
pp. 15-21
2012 ◽
Vol 29
◽
pp. 59-62
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