Epitaxial growth of skutterudite (CoSb3) thin films on (001) InSb by pulsed laser deposition

2001 ◽  
Vol 16 (9) ◽  
pp. 2467-2470 ◽  
Author(s):  
J. C. Caylor ◽  
M. S. Sander ◽  
A. M. Stacy ◽  
J. S. Harper ◽  
R. Gronsky ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
Epitaxial Relationship ◽  
X Ray ◽  
Zinc Blende ◽  
Transmission Electron ◽  
Zinc Blende Structure

Heteroepitaxial growth of the cubic skutterudite phase CoSb3 on (001) InSb substrates was achieved by pulsed laser deposition using a substrate temperature of 270 °C and a bulk CoSb3 target with 0.75 at.% excess Sb. An InSb (a0 = 4 0.6478 nm) substrate was chosen for its lattice registry with the antimonide skutterudites (e.g., CoSb3 with a = 0 4 0.9034 nm) on the basis of a presumed 45° rotated relationship with the InSb zinc blende structure. X-ray diffraction and transmission electron microscopy confirmed both the structure of the films and their epitaxial relationship: (001)CoSb3 ∥ (001)InSb; [100]CoSb3 ∥ [110]InSb.

Epitaxial Pd-Doped LaFeO3 Films Grown on (100) SrTiO3 by Pulsed Laser Deposition

2014 ◽  
Vol 936 ◽  
pp. 282-286
Author(s):  
Ying Wen Duan
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Film Surface ◽  
Laser Deposition ◽  
Structural Quality ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
Orientation Relationships ◽  
X Ray ◽  
Transmission Electron

Single-crystalline, epitaxial LaFeO3 films with 5 at. % substitution of Pd on the Fe site are grown on (100) SrTiO3 substrate by pulsed-laser deposition technique. The epitaxial orientation relationships are (110)[001]LFPO||(100)[001]STO. X-ray diffraction and transmission electron microscopy reveal that the LFPO films have high structural quality and an atomically sharp LFPO/STO interface. After reduction treatments of as-grown LFPO films, very little Pd escaped the LFPO lattice onto the film surface, the formed Pd (100) particles are oriented epitaxially, and parallel to the LFPO films surface.

The effect of target crystallography on the growth of Pb(Mg1/3Nb2/3)O3 thin films using pulsed laser deposition

1999 ◽  
Vol 14 (6) ◽  
pp. 2355-2358 ◽  
Author(s):  
M. H. Corbett ◽  
G. Catalan ◽  
R. M. Bowman ◽  
J. M. Gregg
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Plan View ◽  
X Ray ◽  
Transmission Electron ◽  
Lead Magnesium

Pulsed laser deposition has been used to make two sets of lead magnesium niobate thin films grown on single-crystal h100j MgO substrates. One set was fabricated using a perovskite-rich target while the other used a pyrochlore-rich target. It was found that the growth conditions required to produce almost 100% perovskite Pb(Mg1/3Nb2/3)O3 (PMN) films were largely independent of target crystallography. Films were characterized crystallographically using x-ray diffraction and plan view transmission electron microscopy, chemically using energy dispersive x-ray analysis, and electrically by fabricating a planar thin film capacitor structure and monitoring capacitance as a function of temperature. All characterization techniques indicated that perovskite PMN thin films had been successfully fabricated.

Epitaxial Growth of 3C-SiC by Pulsed Laser Deposition

1995 ◽  
Vol 410 ◽  
Author(s):  
J. E. Cosgrove ◽  
P. A. Rosenthal ◽  
D. Hamblen ◽  
D. B. Fenner ◽  
C. Yang
Keyword(s):  
Electron Microscopy ◽  
Pulsed Laser Deposition ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Scanning Auger Microprobe ◽  
Substrate Types

ABSTRACTWe have grown thin films of SiC by pulsed laser deposition on silicon (100) and vicinal and non-vicinal 6H SiC (0001) substrates using a quadrupled YAG laser and a high purity dense polycrystalline SiC target. Epitaxy on all three substrate types was confirmed by x-ray diffraction, transmission electron microscopy and electron diffraction. Composition of the films was measured by Rutherford backscattering spectrometry and Scanning Auger Microprobe.

Heteroepitaxial growth of TaN on MgO(001) and TiN(001)/Si(001) by pulsed laser deposition

2001 ◽  
Vol 672 ◽  
Author(s):  
H. Y. Cheung ◽  
K.H. Wong
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Structural Quality ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Plan View ◽  
Diffraction Profile ◽  
X Ray

ABSTRACTEpitaxial TaN(001) films have been successfully grown on MgO(001) single crystal and TiN(001) buffered Si(001) substrates by pulsed laser deposition method. Crystalline TaN layers of about 100 nm thick were deposited under a base pressure of 5 × 10−6 Torr and at substrate temperatures ranging from 500°C to 700°C. X-ray diffraction results suggested that stoichiometric TaN films with cube-on-cube <001>TaN∥<001>MgO heteroepitaxy are obtained in this temperature range. Plan-view and cross-sectional electron microscopy analysis revealed excellent structural quality and sharp interface boundary. TaN films grown on TiN(001) buffered Si(001), however, showed a mixture of TaNx (with x ≤ 1) components. Although the (001)-orientated TaN is always present prominently, the nitrogen deficient TaNx components are often co-existed in the films and show up as a broad peak in the X-ray diffraction profile. Stoichiometric and single phase TaN(001) films can only be obtained in a narrow temperature window at around 550oC and heteroepitaxial relation <001>TaN∥<001>TiN∥<001>Si has been demonstrated.

Growth of Epitaxial Cu/TiN/6H-SiC(0001) Heterostructures by Pulsed Laser Deposition

1999 ◽  
Vol 580 ◽  
Author(s):  
A. Kvit ◽  
A.K. Sharma ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Transmission Electron Micrograph ◽  
X Ray Diffraction ◽  
Plan View ◽  
X Ray ◽  
Transmission Electron

AbstractEpitaxial Cu/TiN heterostructures were grown on hexagonal (6H)-SiC(0001) substrate by pulsed laser deposition using the domain epitaxy, where integral multiple of lattice constant or major planes match across the interface1. Such layers are needed for metallization of SiC bond integrated circuit devices. These Cu and TiN layers on SiC(0001) were grown at 600 degrees centigrade in a high vacuum (<10−6 Torr). This structure was characterized using X-ray diffraction technique and transmission electron microscopy. The X-ray diffraction recorded only (111) and (222) reflection of Cu and TiN. The full-width at half maximum of ω-rocking curve of (111) reflection of Cu (0.4 degree) and TEM results indicated a high epitaxial quality. The plan view transmission electron micrograph shows that Cu forms three-dimensional islands indicating that the Cu/TiN interface energy is very high. The island size varies from 0.2 to 2 μm. Analysis of selective aperture diffraction patterns and cross-sectional transmission electron microscopy, including high-resolution imaging, showed relationships Cu(111)//TiN(111)//6H-SiC(0001). The TiN/SiC an interface was locally atomically sharp and free from secondary phases or obvious interdiffusion. The typical defects in the TiN(111) layers consisted of threading domain boundaries. The mechanism of three-dimension growth of copper on TiN layers was discussed.

Study of Raman Spectrum of Fe Doped CeO2 Thin Films Grown by Pulsed Laser Deposition

2010 ◽  
Vol 123-125 ◽  
pp. 375-378 ◽  
Author(s):  
Ram Prakash ◽  
Shalendra Kumar ◽  
Chan Gyu Lee ◽  
S.K. Sharma ◽  
Marcelo Knobel ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Fe Doping ◽  
Full Width ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
X Ray

Ce1-xFexO2 (x=0, 0.01, 0.03 and 0.0 5) thin films were grown by pulsed laser deposition technique on Si and LaAlO3 (LAO) substrates. These films were deposited in vacuum and 200 mTorr oxygen partial pressure for both the substrates. These films were characterized by x-ray diffraction XRD and Raman spectroscopy measurements. XRD results reveal that these films are single phase. Raman results show F2g mode at ~466 cm-1 and defect peak at 489 cm-1 for film that deposited on LAO substrates, full width at half maximum (FWHM) is increasing with Fe doping for films deposited on both the substrates.

CRYSTALLINE SrTiO3 THIN FILMS ON SILICON BY PULSED LASER DEPOSITION

2005 ◽  
Vol 19 (01n03) ◽  
pp. 533-535
Author(s):  
J. H. HAO ◽  
J. GAO
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Perovskite Oxide ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Silicon Materials

We have developed a process to grow SrTiO 3 ( STO ) thin films showing single (110) orientation directly on Si by means of pulsed laser deposition technique. The growth of STO films directly on Si has been described. The crystallinity of the grown STO films was characterized by X-ray diffraction analysis of θ-2θ scan and rocking curve. Our results may be of interest for better understanding of the growth based on the perovskite oxide thin films on silicon materials.

The Optical and Electrical Properties of SiOx(x<2) Thin Films Prepared by Pulsed Laser Deposition Technique

2007 ◽  
Vol 997 ◽  
Author(s):  
Byoung Youl Park ◽  
Sol Lee ◽  
Chang Hyun Bae ◽  
Seung Min Park ◽  
Kyoungwan Park
Keyword(s):  
Pulsed Laser Deposition ◽  
Crystalline Silicon ◽  
Quantum Confinement Effect ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray ◽  
Post Annealing ◽  
Transmission Electron ◽  
Transmission Electron Microscope Analysis ◽  
Electron Microscope Analysis

AbstractSiOx (x<2) films were deposited in an O2 atmosphere using Si target in a pulsed laser deposition system. Post-annealing process was employed in an O2 atmosphere to form the nanometer-sized Si crystallites embedded in the SiO2 films. The transmission electron microscope analysis shows the existence of crystalline silicon nano-dots with diameters ranging from 2 to 4 nm. Also, the clear separation of Si and SiO2 phases can be seen in the X-ray photoemission spectra. Photoluminescence peak from the annealed films was obtained, which is attributed to the quantum confinement effect of the Si nano-dots. C-V measurements of the metal-oxide-silicon (MOS) structure containing the silicon nano-dots in the oxide layer were performed to investigate the charging/discharging behavior of the silicon nano-dots. The maximum program window of the MOS was measured to be4.1V under ±5V sweep.

Growth of Epitaxial a-Axis and c-Axis Oriented Sr2RuO4 Films

1995 ◽  
Vol 401 ◽  
Author(s):  
S. Madhavan ◽  
B. J. Gibbons ◽  
A. Dabkowski ◽  
H. A. Dabkowska ◽  
S. Trolier-Mckinstry ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Epitaxial Films ◽  
Temperature Measurements ◽  
Laser Deposition ◽  
Metallic Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Oriented Films

AbstractEpitaxial films of Sr2RuO4 have been grown in situ by pulsed laser deposition on (100) LaAlO3 and (100) LaSrGaO4 substrates. X-ray diffraction results show that the films are single domain and grow c-axis oriented on (100) LaAlO3 and a-axis oriented on (100) LaSrGaO4 substrates. X-ray ø-scans indicate epitaxial alignment of the film and substrate in-plane axes in both cases. Resistivity versus temperature measurements reveal that the as-grown c-axis oriented films are semiconducting and the a-axis oriented films are metallic. The metallic films grown so far were found to be non-superconducting down to 50 mK.

Growth of CaFeOX/LaFeO3 Superlattice on SrTiO3(100) Substrates

2011 ◽  
Vol 1292 ◽  
Author(s):  
Nobuyuki Iwata ◽  
Mark Huijben ◽  
Guus Rijnders ◽  
Hiroshi Yamamoto ◽  
Dave H. A. Blank
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Layer Growth ◽  
Laser Deposition ◽  
Growth Mode ◽  
Layer By Layer ◽  
X Ray Diffraction ◽  
Reciprocal Space Mapping ◽  
X Ray

ABSTRACTThe CaFeOX(CFO) and LaFeO3(LFO) thin films as well as superlattices were fabricated on SrTiO3(100) substrates by pulsed laser deposition (PLD) method. The tetragonal LFO film grew with layer-by-layer growth mode until approximately 40 layers. In the case of CFO, initial three layers showed layer-by-layer growth, and afterward the growth mode was transferred to two layers-by-two layers (TLTL) growth mode. The RHEED oscillation was observed until the end of the growth, approximately 50nm. Orthorhombic twin CaFeO2.5 (CFO2.5) structure was obtained. However, it is expected that the initial three CFO layers are CaFeO3 (CFO3) with the valence of Fe4+. The CFO and LFO superlattice showed a step-terraces surface, and the superlattice satellite peaks in a 2θ-θ and reciprocal space mapping (RSM) x-ray diffraction (XRD) measurements, indicating that the clear interfaces were fabricated.

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