Microstructure and misfit relaxation in SrTiO3/SrRuO3 bilayer films on LaAlO3(100) substrates

2001 ◽  
Vol 16 (12) ◽  
pp. 3443-3450 ◽  
Author(s):  
J. S. Wu ◽  
C. L. Jia ◽  
K. Urban ◽  
J. H. Hao ◽  
X. X. Xi
Keyword(s):  
Electron Microscopy ◽  
Elastic Strain ◽  
Stacking Faults ◽  
Structure Change ◽  
Complex Interaction ◽  
Planar Defects ◽  
Bilayer Films ◽  
Partial Dislocations ◽  
Transmission Electron ◽  
Misfit Accommodation

We studied the microstructure of SrTiO3/SrRuO3 bilayer films on (001) LaAlO3 substrates by high-resolution transmission electron microscopy. At the SrRuO3/LaAlO3 interface a defect configuration of stacking faults and nanotwins bounding either Frank partial dislocations or Shockley partial dislocations and complex interaction between these planar defects were found to be the dominant means of misfit accommodation. The misfit in the SrTiO3/SrRuO3 system, however, is mainly accommodated by elastic strain. Most of the observed defects in the SrTiO3 layer can be related to the [111] planar defects in the SrRuO3 layer propagating and reaching the SrTiO3/SrRuO3 interface. Furthermore, a [110] planar defect can also be introduced in the SrTiO3 layer due to the structure change of the SrTiO3/SrRuO3 interface.

Overlapping Shockley/Frank Faults in 4H-SiC PiN Diodes

2006 ◽  
Vol 527-529 ◽  
pp. 383-386 ◽  
Author(s):  
Mark E. Twigg ◽  
Robert E. Stahlbush ◽  
Peter A. Losee ◽  
Can Hua Li ◽  
I. Bhat ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Light Emission ◽  
Stacking Faults ◽  
Dark Field ◽  
Pin Diodes ◽  
Plan View ◽  
Planar Defects ◽  
Burgers Vector ◽  
Partial Dislocations ◽  
Transmission Electron

Using light emission imaging (LEI), we have determined that not all planar defects in 4H-SiC PiN diodes expand in response to bias. Accordingly, plan-view transmission electron microscopy (TEM) observations of these diodes indicate that these static planar defects are different in structure from the mobile stacking faults (SFs) that have been previously observed in 4H-SiC PiN diodes. Bright and dark field TEM observations reveal that such planar defects are bounded by partial dislocations, and that the SFs associated with these partials display both Frank and Shockley character. That is, the Burgers vector of such partial dislocations is 1/12<4-403>. For sessile Frank partial dislocations, glide is severely constrained by the need to inject either atoms or vacancies into the expanding faulted layer. Furthermore, these overlapping SFs are seen to be fundamentally different from other planar defects found in 4H-SiC.

Dislocations and stacking faults in stainless steel

1957 ◽  
Vol 240 (1223) ◽  
pp. 524-538 ◽  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Stainless Steel ◽  
Grain Boundaries ◽  
Stacking Faults ◽  
Stacking Fault ◽  
Stacking Fault Energy ◽  
Thin Sections ◽  
Partial Dislocations ◽  
Transmission Electron

Further experiments by transmission electron microscopy on thin sections of stainless steel deformed by small amounts have enabled extended dislocations to be observed directly. The arrangement and motion of whole and partial dislocations have been followed in detail. Many of the dislocations are found to have piled up against grain boundaries. Other observations include the formation of wide stacking faults, the interaction of dislocations with twin boundaries, and the formation of dislocations at thin edges of the foils. An estimate is made of the stacking-fault energy from a consideration of the stresses present, and the properties of the dislocations are found to be in agreement with those expected from a metal of low stacking-fault energy.

Defects in Germanium Nanocrystals Produced by Ion Implantation

2013 ◽  
Vol 709 ◽  
pp. 148-152
Author(s):  
Yu Juan Zhang ◽  
Lei Shang
Keyword(s):  
Electron Microscopy ◽  
Light Emission ◽  
Stacking Faults ◽  
Implantation Dose ◽  
Defect Structures ◽  
High Temperature Annealing ◽  
Planar Defects ◽  
Transmission Electron ◽  
Microstructural Defects ◽  
Germanium Nanocrystals

Germanium nanocrystals (Ge-nc) were produced by the implantation of Ge+ into a SiO2 film deposited on (100) Si, followed by a high-temperature annealing. High-resolution transmission electron microscopy (HRTEM) has been used to investigate the defect structures inside the Ge-nc produced by different implantation doses (1×1016, 2×1016, 4×1016 and 8×1016 cm-2). It has been found that the planar defects such as nanotwins and stacking faults (SFs) are dominant in Ge-nc (60%) for the samples with implantation doses higher than 2×1016 cm-2, while for the sample with an implantation dose lower than 1×1016 cm-2, fewer planar defects are observed in the Ge-nc (20%). The percentages of nanotwins in the planar defects are 87%, 77%, 67% and 60% in four samples, respectively. The twinning structures include single twins, double twins and multiple twins. We also found that there are only SFs in some nanocrystals, and in others the SFs coexist with twins. These microstructural defects are expected to play an important role in the light emission from the Ge-nc.

Dynamical Study of Dislocations and 4H → 3C Transformation Induced by Stress in (11-20) 4H-SiC

2005 ◽  
Vol 483-485 ◽  
pp. 299-302 ◽  
Author(s):  
Hosni Idrissi ◽  
Maryse Lancin ◽  
Joel Douin ◽  
G. Regula ◽  
Bernard Pichaud
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Etching ◽  
Stacking Faults ◽  
Sample Surface ◽  
Cubic Phase ◽  
Dynamical Study ◽  
Weak Beam ◽  
Partial Dislocations ◽  
Transmission Electron

4H-SiC samples were bent in compression mode at temperature ranging from 400°C to 700°C. The introduced-defects were identified by Weak Beam (WB) and High Resolution Transmission Electron Microscopy (HRTEM) techniques. They consist of double stacking faults bound by 30° Si(g) partial dislocations whose glide locally transforms the material in its cubic phase. The velocity of partial dislocations was measured after chemical etching of the sample surface. The formation and the expansion of the double stacking faults are discussed.

Transmission electron microscope investigation of indentation induced dislocation configurations on the (001) GaSb face

1994 ◽  
Vol 209 (3) ◽  
Author(s):  
J. Doerschel
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Room Temperature ◽  
Stacking Faults ◽  
Electron Microscope Investigation ◽  
Partial Dislocations ◽  
Transmission Electron ◽  
Induced Dislocation

AbstractDislocation configurations induced by room temperature microindentations on the (001) face of GaSb (undoped and Te-doped) have been studied using high voltage transmission electron microscopy. Perfect and partial dislocations could be found in all four arms of the dislocation rosette around the indent. Microtwins and rarely single stacking faults are associated with the partials. Contrary to other binary III–V compounds, an “inverse” glide prism along the [1[unk]0]/[[unk]10] rosette arms is created and it is bounded by {111}

Partial Dislocations and Critical Thicknesses for Strained Layer Relaxation

1992 ◽  
Vol 263 ◽  
Author(s):  
D. M. Hwang ◽  
R. Bhat ◽  
S. A. Schwarz ◽  
C. Y. Chen
Keyword(s):  
Electron Microscopy ◽  
Energy Minimization ◽  
Critical Thickness ◽  
Stacking Faults ◽  
Standard Free Energy ◽  
Strained Layers ◽  
Partial Dislocations ◽  
Transmission Electron ◽  
Perfect Dislocation ◽  
Fcc Structure

ABSTRACTPartial dislocations and their associated stacking faults are identified as the primary defects responsible for the initial relaxation of tensile-strained layers of fcc structure. The critical thickness for the formation of 90° partial dislocations at the strained interface is almost a factor of two smaller than that predicted for the formation of 60° perfect dislocation. Microstructures revealed by transmission electron microscopy from strained layers of various lattice mismatches and thicknesses agree with the prediction of the standard free-energy minimization model.

Planar defects in β-iron disilicide (β-FeSi2) analyzed by transmission electron microscopy and modeling

1992 ◽  
Vol 25 (2) ◽  
pp. 122-128 ◽  
Author(s):  
Y. Zheng ◽  
A. Taccoen ◽  
J. F. Petroff
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Structural Model ◽  
Stacking Faults ◽  
Planar Defects ◽  
Iron Disilicide ◽  
Defect Position ◽  
Transmission Electron ◽  
Lattice Images ◽  
Diffraction Patterns

Microplanar defects were observed in β-iron disilicide by transmission electron microscopy. They were identified as (100)[011]/2 intrinsic stacking faults by means of electron diffraction patterns and observed in high-resolution lattice images. A structural model of the faults is proposed here in setting the defect position at x = ¼ within the cell.

Stacking Fault Formation via 2D Nucleation in PVT Grown 4H-SiC

2015 ◽  
Vol 821-823 ◽  
pp. 85-89 ◽  
Author(s):  
Fang Zhen Wu ◽  
Huan Huan Wang ◽  
Yu Yang ◽  
Jian Qiu Guo ◽  
Balaji Raghothamachar ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Opposite Sign ◽  
Stacking Faults ◽  
Stacking Fault ◽  
X Ray ◽  
Partial Dislocations ◽  
Transmission Electron ◽  
Structure Simulation ◽  
Simulation Results ◽  
Polytype Structure

Synchrotron white beam x-ray topography (SWBXT), synchrotron monochromatic beam x-ray topography (SMBXT), and high resolution transmission electron microscopy (HRTEM) studies have been carried out on stacking faults in PVT grown 4H-SiC crystal. Their fault vectors were determined by SWBXT to be 1/3<-1100>, 1/2<0001>, 1/6<-2203>, 1/12<4-403>, 1/12<-4403>. HRTEM studies reveal their similarity in stacking sequences as limited numbers of bilayers of 6H polytype structure. Simulation results of the two partial dislocations associated with the stacking faults in SMBXT images reveal the opposite sign nature of their Burgers vectors. A mechanism for stacking fault formation via 2D nucleation is postulated.

Stress-induced C14→C15 phase transformation in a Zr(Fe,Cr)2 Laves structured nanophase

2020 ◽  
Vol 53 (1) ◽  
pp. 222-225 ◽  
Author(s):  
Fusen Yuan ◽  
Chengze Liu ◽  
Fuzhou Han ◽  
Yingdong Zhang ◽  
Ali Muhammad ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Phase Transformation ◽  
Phase Boundary ◽  
Shear Deformation ◽  
Orientation Relationship ◽  
Stacking Faults ◽  
Hexagonal Close Packed ◽  
Partial Dislocations ◽  
Transmission Electron

The C14 (hexagonal close-packed) and C15 (face-centred cubic) close-packed structures are found to coexist in an individual Zr(Fe,Cr)2 Laves structured nanophase in Zircaloy-4 alloy with shear deformation. The orientation relationship between C15 and C14 is [\bar 1 10]C15//[11\bar 20]C14 and (\bar 111)C15//(0001)C14. The stacking faults (SFs) in the C15 structure and the high-density SFs between C15 and C14 have been identified using transmission electron microscopy, which showed they originated on close-packed planes by emission of 1/6〈\bar 2 \bar 1\bar 1〉 Shockley partial dislocations from the phase boundary. Furthermore, the stress-induced C14→C15 phase transformation took place during the shear deformation.

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