Continuous-wave InGaN laser diodes on copper and diamond substrates

2002 ◽  
Vol 17 (4) ◽  
pp. 890-894 ◽  
Author(s):  
William S. Wong ◽  
Michael Kneissl ◽  
David W. Treat ◽  
Mark Teepe ◽  
Naoko Miyashita ◽  
...  
Keyword(s):  
Thin Film ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Light Output ◽  
Maximum Output ◽  
Substrate Removal ◽  
Transparent Substrate ◽  
Before And After ◽  
Lift Off

InGaN-based optoelectronics were integrated with dissimilar substrate materials using a novel thin-film laser lift-off (LLO) process. The LLO process was employed to integrate InGaN-based laser diodes (LDs) with Cu and diamond substrates. Separation of InGaN-based thin-film devices from their typical sapphire growth substrates was accomplished using a pulsed excimer laser in the ultraviolet regime incident through the transparent substrate. Characterization of the LDs before and after the sapphire substrate removal revealed no measurable degradation in device performance. Reduced threshold currents and increased differential quantum efficiences were measured for LDs on Cu due to a 50% reduction of the thermal impedence. Light output for LDs on Cu was two times greater than comparable LDs on sapphire with a maximum output of 100 mW. Increased light output for LDs on diamond was also measured with a maximum output of 80 mW.

Integration of InGaN-based Optoelectronics with Dissimilar Substrates by Wafer Bonding and Laser Lift-off

2001 ◽  
Vol 681 ◽  
Author(s):  
William S. Wong ◽  
Michael Kneissl ◽  
David W. Treat ◽  
Mark Teepe ◽  
Naoko Miyashita ◽  
...  
Keyword(s):  
Thin Film ◽  
Wafer Bonding ◽  
Device Performance ◽  
Light Emitting ◽  
Si Substrates ◽  
Substrate Removal ◽  
Transparent Substrate ◽  
Before And After ◽  
Lift Off

ABSTRACTInGaN-based optoelectronics have been integrated with dissimilar substrate materials using a novel thin-film laser lift-off process. By employing the LLO process with wafer-bonding techniques, InGaN-based light emitting diodes (LEDs) have been integrated with Si substrates, forming vertically structured LEDs. The LLO process has also been employed to integrate InGaN-based laser diodes (LDs) with Cu and diamond substrates. Separation of InGaN-based thin-film devices from their typical sapphire growth substrates is accomplished using a pulsed excimer laser in the ultraviolet regime incident through the transparent substrate. Characterization of the LEDs and LDs before and after the sapphire substrate removal revealed no measurable degradation in device performance.

Integration of InxGa1−xN Laser Diodes with Dissimilar Substrates by Laser Lift-off

2000 ◽  
Vol 639 ◽  
Author(s):  
William S. Wong ◽  
Michael Kneissl ◽  
Ping Mei ◽  
David W. Treat ◽  
Mark Teepe ◽  
...  
Keyword(s):  
Indium Gallium Nitride ◽  
Continuous Wave ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Light Output ◽  
Multiple Quantum ◽  
Maximum Output ◽  
Thermal Impedance ◽  
Indium Gallium ◽  
Lift Off

ABSTRACTContinuous-wave (cw) indium-gallium nitride (InGaN) multiple-quantum-well (MQW) laser diodes (LDs) were successfully transferred from sapphire onto copper and diamond substrates using a two-step laser lift-off (LLO) process. Reduced threshold currents and increased differential quantum efficiencies were measured for LDs on Cu due to a 50% reduction of the thermal impedance. Light output for LDs on Cu was three times greater than comparable LDs on sapphire with a maximum output of 30 mW. Increased light output for LDs on diamond were also measure with a maximum output of 80 mW.

scholarly journals Performance characteristics of cw InGaN multiple-quantum-well laser diodes

2000 ◽  
Vol 639 ◽  
Author(s):  
Michael Kneissl ◽  
William S. Wong ◽  
Chris. G. Van de Walle ◽  
John E. Northrup ◽  
David W. Treat ◽  
...  
Keyword(s):  
Quantum Well ◽  
Continuous Wave ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Chemical Vapor ◽  
Performance Characteristics ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Lift Off ◽  
Multiple Quantum Well Laser

ABSTRACTThe performance characteristics are reported for continuous-wave (cw) InGaN multiple-quantum-well laser diodes grown on epitaxially laterally overgrown GaN on sapphire substrates by metalorganic chemical vapor deposition. Room-temperature cw threshold currents as low as 41mA with operating voltages of 6.0V were obtained. The emission wavelength was near 400 nm with output powers greater than 20 mW per facet. Under cw conditions laser oscillation was observed up to 90°C. A significant reduction in thermal resistance was observed for laser diodes transferred from sapphire onto Cu substrates by excimer laser lift-off, resulting in increased cw output power of more than 100mW.

GaN-Based Blue Laser Diodes With 2.2 W of Light Output Power Under Continuous-Wave Operation

2017 ◽  
Vol 29 (24) ◽  
pp. 2203-2206 ◽  
Author(s):  
Jianping Liu ◽  
Liqun Zhang ◽  
Deyao Li ◽  
Kun Zhou ◽  
Yang Cheng ◽  
...  
Keyword(s):  
Output Power ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Light Output ◽  
Blue Laser ◽  
Light Output Power ◽  
Continuous Wave Operation

Fabrication and Characterization of Thin-Film Metal-Insulator-Metal Diode for use in Rectenna as Infrared Detector

2006 ◽  
Vol 935 ◽  
Author(s):  
Subramanian Krishnan ◽  
Shekhar Bhansali ◽  
Kenneth Buckle ◽  
Elias Stefanakos
Keyword(s):  
Thin Film ◽  
Infrared Detector ◽  
Forward Bias ◽  
Separation Distance ◽  
Bias Current ◽  
Insulator Layer ◽  
Metal Insulator Metal ◽  
Fabrication And Characterization ◽  
Lift Off

ABSTRACTUncooled Infrared detectors with high sensitivity and shorter response times are preferred as through the wall detection device. An alternate approach for making these sensors, being pursued by us is to use the concept of rectenna with tunnel diodes. Successful fabrication of such high frequency switching diodes with antenna as detectors, offer a much faster response time than existing bolometer. This paper presents the fabrication and characterization of thin-film MIM diode for use in rectenna as an Infrared detector. MIM diodes operate on the basis of quantum mechanical phenomenon, i.e., when a sufficiently thin barrier (<5nm) is sandwiched between two electrodes, current can flow between them by means of tunnelling. This tunnelling probability increases with a decrease in the dielectric barrier height and the separation distance. The MIM diodes were fabricated with asymmetric electrodes with 1μm2 contact areas with cut-off frequency ∼0.1THz. The electrodes of the Ni-NiO-Cr MIM diodes have been fabricated through Photolithography, e-beam lithography, followed by conventional lift-off process. The dielectric layer (NiO) was deposited through plasma oxidation to obtain 2nm thin films. The composition and the thickness of the insulator layer are characterized by metrological tools like SEM and Spectroscopic Ellipsometer. The diode characteristics presented in this paper have been found to be stable and reproducible with the established fabrication conditions. Electrical behaviour (I-V) of the MIM junctions were investigated and compared with the theoretical tunnelling characteristics of the Ni-NiO-Cr MIM diodes. For devices with such non-linear electrodes, excellent agreement is obtained between the measured and the calculated result with the forward bias current as 0.8mA at 0.2V and the reverse bias current as −0.2mA at −0.2V.

Wet Removal of Post-Etch Residues by a Combination of UV Irradiation and a SC1 Process

2012 ◽  
Vol 195 ◽  
pp. 114-118 ◽  
Author(s):  
Els Kesters ◽  
Q.T. Le ◽  
I. Simms ◽  
K. Nafus ◽  
H. Struyf ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Photoelectron Spectroscopy ◽  
Analytical Techniques ◽  
Critical Dimension ◽  
Treatment Conditions ◽  
High Adhesion ◽  
Patterned Structures ◽  
Before And After ◽  
Lift Off

In back-end of line processing (BEOL), the polymer deposited on the dielectric sidewalls during the etch process must be removed prior to subsequent processing steps to achieve high adhesion and good coverage of materials deposited in the etched features [1, . Typically, this is done by a combination of a short plasma treatment and a diluted wet clean, or by wet cleans alone. On the one hand, for porous dielectric stacks, a mild plasma treatment that preserves the integrity of the low-k dielectrics would not be sufficient to effectively remove this residue. With regard to wet clean, diluted aqueous solutions (e.g. HF-based) are not efficient for polymer removal without etching the underlying dielectric to lift off the polymer, leading to unacceptable critical dimension (CD) loss. In addition, analytical techniques available for direct characterization of sidewall residues are limited. For a fast screening of potential chemistries capable of dissolving/removing polymer residues generated during the low-k etch, a model fluoropolymer was deposited on a blanket, checkerboard low-k substrate. The present study mainly focused on the characterization of model polymer after deposition (as-deposited) and after immersion in aqueous and solvent-based cleaning solutions. The polymer removal efficiency was influenced/ improved by UV treatments prior to wet clean processes. In the second part of the study, selected UV treatment conditions and cleaning solutions were applied to low-k patterned structures using Angle-resolved X-ray photoelectron spectroscopy (AR-XPS) to characterize the dielectric sidewall before and after UV modification and the subsequent cleaning process.

STXM Characterization of Nanostructured Thin Film Anode Before and After Start-Up Shutdown and Reversal Tests

2013 ◽  
Vol 58 (1) ◽  
pp. 473-479 ◽  
Author(s):  
V. Lee ◽  
D. Susac ◽  
S. Kundu ◽  
V. Berejnov ◽  
R. T. Atanasoski ◽  
...  
Keyword(s):  
Thin Film ◽  
Nanostructured Thin Film ◽  
Start Up ◽  
Before And After
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