Integration of InxGa1−xN Laser Diodes with Dissimilar Substrates by Laser Lift-off

2000 ◽  
Vol 639 ◽  
Author(s):  
William S. Wong ◽  
Michael Kneissl ◽  
Ping Mei ◽  
David W. Treat ◽  
Mark Teepe ◽  
...  
Keyword(s):  
Indium Gallium Nitride ◽  
Continuous Wave ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Light Output ◽  
Multiple Quantum ◽  
Maximum Output ◽  
Thermal Impedance ◽  
Indium Gallium ◽  
Lift Off

ABSTRACTContinuous-wave (cw) indium-gallium nitride (InGaN) multiple-quantum-well (MQW) laser diodes (LDs) were successfully transferred from sapphire onto copper and diamond substrates using a two-step laser lift-off (LLO) process. Reduced threshold currents and increased differential quantum efficiencies were measured for LDs on Cu due to a 50% reduction of the thermal impedance. Light output for LDs on Cu was three times greater than comparable LDs on sapphire with a maximum output of 30 mW. Increased light output for LDs on diamond were also measure with a maximum output of 80 mW.

scholarly journals Performance characteristics of cw InGaN multiple-quantum-well laser diodes

2000 ◽  
Vol 639 ◽  
Author(s):  
Michael Kneissl ◽  
William S. Wong ◽  
Chris. G. Van de Walle ◽  
John E. Northrup ◽  
David W. Treat ◽  
...  
Keyword(s):  
Quantum Well ◽  
Continuous Wave ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Chemical Vapor ◽  
Performance Characteristics ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Lift Off ◽  
Multiple Quantum Well Laser

ABSTRACTThe performance characteristics are reported for continuous-wave (cw) InGaN multiple-quantum-well laser diodes grown on epitaxially laterally overgrown GaN on sapphire substrates by metalorganic chemical vapor deposition. Room-temperature cw threshold currents as low as 41mA with operating voltages of 6.0V were obtained. The emission wavelength was near 400 nm with output powers greater than 20 mW per facet. Under cw conditions laser oscillation was observed up to 90°C. A significant reduction in thermal resistance was observed for laser diodes transferred from sapphire onto Cu substrates by excimer laser lift-off, resulting in increased cw output power of more than 100mW.

Continuous-wave InGaN laser diodes on copper and diamond substrates

2002 ◽  
Vol 17 (4) ◽  
pp. 890-894 ◽  
Author(s):  
William S. Wong ◽  
Michael Kneissl ◽  
David W. Treat ◽  
Mark Teepe ◽  
Naoko Miyashita ◽  
...  
Keyword(s):  
Thin Film ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Light Output ◽  
Maximum Output ◽  
Substrate Removal ◽  
Transparent Substrate ◽  
Before And After ◽  
Lift Off

InGaN-based optoelectronics were integrated with dissimilar substrate materials using a novel thin-film laser lift-off (LLO) process. The LLO process was employed to integrate InGaN-based laser diodes (LDs) with Cu and diamond substrates. Separation of InGaN-based thin-film devices from their typical sapphire growth substrates was accomplished using a pulsed excimer laser in the ultraviolet regime incident through the transparent substrate. Characterization of the LDs before and after the sapphire substrate removal revealed no measurable degradation in device performance. Reduced threshold currents and increased differential quantum efficiences were measured for LDs on Cu due to a 50% reduction of the thermal impedence. Light output for LDs on Cu was two times greater than comparable LDs on sapphire with a maximum output of 100 mW. Increased light output for LDs on diamond was also measured with a maximum output of 80 mW.

Characteristics of indium-gallium-nitride multiple-quantum-well blue laser diodes grown by MOCVD

1998 ◽  
Vol 189-190 ◽  
pp. 837-840 ◽  
Author(s):  
M.P. Mack ◽  
A.C. Abare ◽  
M. Hansen ◽  
P. Kozodoy ◽  
S. Keller ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Quantum Well ◽  
Indium Gallium Nitride ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Blue Laser ◽  
Multiple Quantum ◽  
Indium Gallium

Near-field scanning optical microscopy of indium gallium nitride multiple-quantum-well laser diodes

1999 ◽  
Vol 74 (16) ◽  
pp. 2349-2351 ◽  
Author(s):  
D. K. Young ◽  
M. P. Mack ◽  
A. C. Abare ◽  
M. Hansen ◽  
L. A. Coldren ◽  
...  
Keyword(s):  
Indium Gallium Nitride ◽  
Near Field ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Indium Gallium ◽  
Scanning Optical Microscopy ◽  
Multiple Quantum Well Laser ◽  
Near Field Scanning

High Power InAsSb/InAsSbP Laser Diodes Emitting at 3 ∼ 5 μm Range

1996 ◽  
Vol 450 ◽  
Author(s):  
M. Razeghi ◽  
J. Diaz ◽  
H. J. Yi ◽  
D. Wu ◽  
B. Lane ◽  
...  
Keyword(s):  
Active Region ◽  
Energy Gap ◽  
Maximum Output Power ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Chemical Vapor ◽  
Threshold Current ◽  
Multiple Quantum ◽  
Maximum Output ◽  
Double Heterostructure

ABSTRACTWe report metalorganic chemical vapor deposition-grown double heterostructure and multiple quantum well InAsSb/InAsSbP laser diodes emitting at 3 to 4 μm and light emitting diodes up to 5 μm. Maximum output power up to 1 W (from two facets) with differential efficiency above 70 % up to 150 K was obtained from a MQW laser with stripe width of 100 μm and cavity length of 700 μm for emitting wavelength of 3.6 μm at 90 K. Maximum operating temperature up to 220 K with threshold current density of 40 A/cm2 at 78 K were achieved from the double-heterostructure lasers emitting at 3.2 μm. The far-field beam divergence as narrow as 24° was achieved with the use of higher energy gap barrier layers, i.e., lower effective refractive index, in MQW active region. We also discuss the effect of composition-fluctuation in the InAsSb active region on the gain and threshold current of the lasers.

The Integration of InxGa1-xN Multiple-Quantum-Well Laser Diodes with Copper Substrates by Laser Lift-Off

2000 ◽  
Vol 39 (Part 2, No. 12A) ◽  
pp. L1203-L1205 ◽  
Author(s):  
William S. Wong ◽  
Michael Kneissl ◽  
Ping Mei ◽  
David W. Treat ◽  
Mark Teepe ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Lift Off ◽  
Multiple Quantum Well Laser

Continuous-wave operation of ultraviolet InGaN/InAlGaN multiple-quantum-well laser diodes

2003 ◽  
Vol 82 (15) ◽  
pp. 2386-2388 ◽  
Author(s):  
Michael Kneissl ◽  
David W. Treat ◽  
Mark Teepe ◽  
Naoko Miyashita ◽  
Noble M. Johnson
Keyword(s):  
Quantum Well ◽  
Continuous Wave ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Continuous Wave Operation ◽  
Multiple Quantum Well Laser

Continuous-wave operation of InGaN multiple quantum well laser diodes grown by molecular beam epitaxy

2005 ◽  
Vol 41 (13) ◽  
pp. 739 ◽  
Author(s):  
M. Kauer ◽  
S.E. Hooper ◽  
V. Bousquet ◽  
K. Johnson ◽  
C. Zellweger ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Continuous Wave ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Continuous Wave Operation ◽  
Multiple Quantum Well Laser

Continuous-Wave Operation ofm-Plane InGaN Multiple Quantum Well Laser Diodes

2007 ◽  
Vol 46 (No. 9) ◽  
pp. L187-L189 ◽  
Author(s):  
Kuniyoshi Okamoto ◽  
Hiroaki Ohta ◽  
Shigefusa F. Chichibu ◽  
Jun Ichihara ◽  
Hidemi Takasu
Keyword(s):  
Quantum Well ◽  
Continuous Wave ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Continuous Wave Operation ◽  
Multiple Quantum Well Laser
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