Electrical properties of highly oriented Pb(Mg1/3Nb2/3)O3–Pb(Zr,Ti)O3 thin films fabricated by the sol-gel method

2006 ◽  
Vol 21 (6) ◽  
pp. 1532-1536 ◽  
Author(s):  
Joon-Koo Kang ◽  
Chee-Sung Park ◽  
Jae-Wung Lee ◽  
Gun-Tae Park ◽  
Hyoun-Ee Kim ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Lead Zirconate Titanate ◽  
Crystallographic Orientation ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Molar Ratio ◽  
Si Substrates ◽  
Oriented Film ◽  
Oriented Films ◽  
Lead Magnesium

Highly (100)- and (111)-oriented lead magnesium niobate–lead zirconate titanate (PMN-PZT) films were deposited on Pt(111)/Ti/SiO2/Si substrates using a sol containing polyvinylpyrrolidone (PVP). The molar ratio of Zr/Ti in the PZT was fixed at 60/40, and the PMN content was changed in the range of 0–30 mol%. The films had a dense and columnar microstructure with a thickness of about 1 μm as a result of being spun four times. The crystallographic orientation of the films was controlled by adjusting the pyrolysis temperature; a (100) orientation was obtained by pyrolyzing at 300 °C and a (111) orientation by pyrolyzing at 350 °C. The electrical properties of the films were strongly dependent on the crystallographic orientation and PMN content. With increasing PMN content, the dielectric constant of all of the films increased. On the other hand, the remnant polarization of the (111)-oriented films decreased steadily with increasing PMN content, while that of the (100)-oriented films remained unchanged up to a PMN content of 20%. The piezoelectric coefficients of the (100)-oriented film were consistently higher than those of the (111)-oriented film with the same composition. The highest piezoelectric coefficient was observed for the (100)-oriented film with a composition of 0.2PMN–0.8PZT, indicating the morphotropic phase boundary between the rhombohedral PZT phase and the pseudocubic PMN phase is in the vicinity of this composition.

Orientation control of sol-gel-derived lead zirconate titanate film by addition of polyvinylpyrrolidone

2005 ◽  
Vol 20 (4) ◽  
pp. 882-888 ◽  
Author(s):  
Gun-Tae Park ◽  
Chee-Sung Park ◽  
Jong-Jin Choi ◽  
Hyoun-Ee Kim
Keyword(s):  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Organic Residues ◽  
Si Substrates ◽  
Pzt Film ◽  
Oriented Film ◽  
Zirconate Titanate ◽  
Nucleation Sites ◽  
Pzt Films

Highly (100)- and (111)-oriented lead zirconate titanate (PZT) films with a thickness of 350 nm were deposited on platinized Si substrates through a single spinning of a PZT sol containing polyvinylpyrrolidone (PVP) as an additive. The crystallographic orientation of the film was strongly influenced by pyrolysis conditions after spin coating. When the spin-coated sol was pyrolyzed at temperatures above 320 °C for relatively long periods of time (>5 min), (111)-oriented film was formed after annealing at 700 °C for 10 min. On the other hand, when the same sol was pyrolyzed at 320 °C for short periods of time (<5 min), the film was strongly oriented to the (100) direction after annealing. Organic residues derived from PVP decomposition acted as nucleation sites for the (100) oriented grains during annealing after the pyrolysis. The effective d33 of the (100)-oriented PZT film (100 pC/N) was much higher than that of the (111)-oriented film (62 pC/N) with the same thickness.

Electrical Properties of Perovskite-Based Ferroelectric Thin Films Modified Using Rare-Earth Elements

2006 ◽  
Vol 320 ◽  
pp. 49-52
Author(s):  
Hiroshi Uchida ◽  
Hiroshi Nakaki ◽  
Hiroshi Funakubo ◽  
Seiichiro Koda
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Electrical Properties ◽  
Lead Zirconate Titanate ◽  
Remanent Polarization ◽  
Lead Zirconate ◽  
Solution Deposition ◽  
Si Substrates ◽  
Crystal Anisotropy ◽  
Insulating Properties

The electrical properties of perovskite-based ferroelectric films were improved by ion modification using rare-earth cations. Thin films of rare-earth-modified lead zirconate titanate [Pb(Zr,Ti)O3] were fabricated on (111)Pt/Ti/SiO2/(100)Si substrates by a chemical solution deposition technique. The substitution of volatile cations in the simple-perovskite oxides, such as Pb2+ in Pb(Zr,Ti)O3 films, enhanced the insulating properties of the film. The crystal anisotropy of the Pb(Zr,Ti)O3 film could be controlled by varying the species and the amount of replacing cations to enhance the spontaneous polarization. Thus, ion modification using Dy3+ cation could enhance the remanent polarization of Pb(Zr,Ti)O3 film consequently.

Orientation Control of Lead Zirconate Titanate Film by Combination of Sol-Gel and Sputtering Deposition

2005 ◽  
Vol 20 (1) ◽  
pp. 243-246 ◽  
Author(s):  
Chee-Sung Park ◽  
Sang-Wook Kim ◽  
Gun-Tae Park ◽  
Jong-Jin Choi ◽  
Hyoun-Ee Kim
Keyword(s):  
Magnetron Sputtering ◽  
Lead Zirconate Titanate ◽  
Seed Layer ◽  
Sol Gel ◽  
Rf Magnetron Sputtering ◽  
Lead Zirconate ◽  
Preferred Orientation ◽  
Sputtering Deposition ◽  
Oriented Film ◽  
Zirconate Titanate

Highly oriented lead zirconate titanate (PZT) films were fabricated on a platinized silicon substrate using a combination of sol-gel and radio frequency (RF) magnetron sputtering deposition methods. A sol-gel derived PZT layer highly oriented to the (100) plane was deposited as a seed layer, and PZT with the same composition then was deposited on the seed layer by RF-magnetron sputtering. The film deposited on the seed layer showed a strong (100) preferred orientation, while the film deposited without the seed layer showed a (111) preferred orientation. Furthermore, a thick PZT film of up to 4 μm was able to be deposited without cracks by using the seed layer. The piezoelectric property of the (100) oriented film was much better than that of the (111) oriented film.

Effect of La Dopant on Electrical Properties of Pb(Zr,Ti)O3 Thin Film Capacitors

1999 ◽  
Vol 596 ◽  
Author(s):  
Chang Jung Kim ◽  
Ilsub Chung
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Lead Zirconate Titanate ◽  
Random Access ◽  
Lead Zirconate ◽  
Second Phase ◽  
Pzt Thin Films ◽  
Si Substrates ◽  
Thin Film Capacitors

AbstractLanthanum doped lead zirconate titanate (PZT) thin films have been prepared on Pt/IrO2/Ir/SiO2/Si substrates to improve the ferroelectric and retention properties. The microstructure and electrical properties of the PZT capacitors were evaluated as a function of La content. The crystalline orientation was appreciably influenced by the addition of La in PZT thin films. The microstructures of films containing 0 and 0.5 mol% La were single phase perovskite, but for La = 1 mol%, a second phase was detected by SEM observation. The 0.5 mol% La doped PZT thin film capacitor showed the best ferroelectric and retention properties for ferroelectric random access memory compared to non-doped PZT.

Layered Functional Ceramics via Misted Chemical Solution Deposition

2007 ◽  
Vol 333 ◽  
pp. 71-76 ◽  
Author(s):  
J.F. Scott ◽  
F.D. Morrison ◽  
M. Miyake ◽  
T. Tatsuta ◽  
O Tsuji
Keyword(s):  
Lead Zirconate Titanate ◽  
Porous Alumina ◽  
Sol Gel ◽  
Chemical Vapour ◽  
Lead Zirconate ◽  
Functionally Graded ◽  
Si Substrates ◽  
Graded Layers ◽  
Pyroelectric Detectors ◽  
Nano Wires

A review is given of "misted" CSD deposition. This technique uses stoichiometrically correct sol-gel solutions but is not a spin-on process. Instead a monodisperse mist of droplets as large as 3 microns in diameter or as small as 0.3 microns is deposited on a substrate. This technique has the great advantage over sol-gel spin-on processing in that it is suitable for nonplanar structures, including nanotubes and nano-wires. One could coat a variety of objects with this technique, including anything from non-planar flash-goggles to a parabolic mirror or focal-plane array of pyroelectric detectors. Yet it is much simpler and less expensive than conventional chemical vapour deposition (CVD). We illustrate its use with functionally graded layers on platinised silicon wafers, on nanotubes of piezoelectrics, and most recently [Pollard, Gregg, et al.] on 100 Gbit/cm2 arrays of Pt nanowires on Si substrates (the latter are 30-nm diameter, spaced 50 nm apart, embedded in porous alumina and capped with lead zirconate titanate capacitors).

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