Direct chemical vapor deposition growth of tunable HfSiON films by a new precursor combination

2007 ◽  
Vol 22 (4) ◽  
pp. 1024-1028 ◽  
Author(s):  
Bin Xia ◽  
Matthew L. Fisher ◽  
Harold Stemper ◽  
Ashutosh Misra
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
High Growth ◽  
Single Step ◽  
Silicon Oxynitride ◽  
Chemical Vapor Deposition Growth ◽  
Nitrogen Incorporation ◽  
Pressure Chemical

Hafnium silicon oxynitride (HfSiON) films were deposited on 200-mm silicon substrates by low-pressure chemical vapor deposition (LPCVD) from a combination of trisilylamine (TSA) and tetrakis(diethylamido)hafnium(IV) (TDEAH) in the temperature range 450 to 575 °C. A highly volatile and carbon-free silicon precursor TSA was used to deposit HfSiON films for the first time. HfSiON films were deposited in a single step with no need of a post-treatment process for nitrogen incorporation. The film composition was tuned in a wide compositional range, and high growth rates were achieved. NH3 was found to have profound effects on film growth rate, metal ratio (Si% or Hf%), nitrogen incorporation, and carbon residue in the films.

Chemical vapor deposition growth of few-layer graphene for transparent conductive films

RSC Advances ◽  
2015 ◽  
Vol 5 (55) ◽  
pp. 44142-44148 ◽  
Author(s):  
Jun Pu ◽  
Lei Tang ◽  
Chaowei Li ◽  
Taotao Li ◽  
Lin Ling ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth ◽  
Conductive Films ◽  
Layer Graphene ◽  
Pressure Chemical ◽  
Few Layer Graphene ◽  
Etching Effect

The facile and scalable technique is demonstrated, which grow graphene with controllable layers on copper foil substrates using the etching effect of H2 in atmospheric pressure chemical vapor deposition (APCVD).

Effects of Process Parameters on Graphene Growth Via Low-Pressure Chemical Vapor Deposition

2020 ◽  
Vol 8 (3) ◽  
Author(s):  
Byoungdo Lee ◽  
Weishen Chu ◽  
Wei Li
Keyword(s):  
Grain Size ◽  
Chemical Vapor Deposition ◽  
Process Parameters ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Growth ◽  
Low Pressure ◽  
Large Set ◽  
Graphene Growth ◽  
Pressure Chemical

Abstract Graphene has attracted enormous research interest due to its extraordinary material properties. Process control to achieve high-quality graphene is indispensable for graphene-based applications. This research investigates the effects of process parameters on graphene quality in a low-pressure chemical vapor deposition (LPCVD) graphene growth process. A fractional factorial design of experiment is conducted to provide understanding on not only the main effect of process parameters, but also the interaction effect among them. Graphene quality including the number of layers and grain size is analyzed. To achieve monolayer graphene with large grain size, a condition with low CH4–H2 ratio, short growth time, high growth pressure, high growth temperature, and slow cooling rate is recommended. This study considers a large set of process parameters with their interaction effects and provides guidelines to optimize graphene growth via LPCVD focusing on the number of graphene layers and the grain size.

A Study of Nucleation and Growth in MOCVD: The Growth of Thin Films of Alumina

2000 ◽  
Vol 648 ◽  
Author(s):  
M.P. Singh ◽  
S. Mukhopadhayay ◽  
Anjana Devi ◽  
S.A. Shivashankar
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Secondary Ion Mass Spectrometry ◽  
Film Growth ◽  
Depth Profiling ◽  
Chemical Vapor ◽  
Nucleation And Growth ◽  
Cross Sectional ◽  
Alumina Films ◽  
Pressure Chemical

AbstractWe have studied the nucleation and growth of alumina by metalorganic chemical vapor deposition (MOCVD). The deposition of alumina films was carried out on Si(100) in a horizontal, hot-wall, low pressure chemical vapor deposition (CVD) reactor, using aluminum acetylacetonate{Al(acac)3}as the CVD precursor. We have investigated growth of alumina films as a function of different CVD parameters such as substrate temperature and total reactor pressure during film growth. Films were characterized by optical microscopy, X-ray diffractometry (XRD), scanning electron microscopy (SEM), cross-sectional SEM, and secondary ion mass spectrometry (SIMS) compositional depth profiling. The chemical analysis reveals that the carbon is present throughout the depth of the films.

Atmospheric Pressure Chemical Vapor Deposition Growth Window for Undoped Gallium Antimonide

1999 ◽  
Vol 14 (4) ◽  
pp. 1238-1245 ◽  
Author(s):  
A. Subekti ◽  
E. M. Goldys ◽  
Melissa J. Paterson ◽  
K. Drozdowicz-Tomsia ◽  
T. L. Tansley
Keyword(s):  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Gallium Antimonide ◽  
Film Growth ◽  
Growth Parameters ◽  
Hole Concentration ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth

Metalorganic chemical vapor deposition (MOCVD) GaSb growth using trimethylgallium and trimethylantimony as a function of substrate temperature and V/III ratio was examined. These parameters were found to have a significant effect on the growth rate and surface morphology of the GaSb films. A phase diagram is used to interpret the effect of these growth parameters on the GaSb film growth. The region of single-phase growth was found to be narrow, falling between 540 and 560 °C. The optimum growth conditions for the MOCVD growth of GaSb have been determined for a TMGa flow rate of 20 sccm and a carrier gas flow of 8 l/min. The optimum substrate temperature and V/III ratio were found to be 540 °C and 0.72, respectively. In these conditions the lowest hole concentration of 5 × 1016 cm-3 and the highest room temperature mobility of 500 cm2 V-1 s-1 were achieved, accompanied by a steep, well-resolved band edge at 0.72 eV.

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