Controlling film growth with selective excitation: Chemical vapor deposition growth of silicon

2004 ◽  
Vol 84 (12) ◽  
pp. 2175-2177 ◽  
Author(s):  
Biao Wu ◽  
Philip I. Cohen ◽  
L. C. Feldman ◽  
Zhenyu Zhang
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Selective Excitation ◽  
Chemical Vapor Deposition Growth

Atmospheric Pressure Chemical Vapor Deposition Growth Window for Undoped Gallium Antimonide

1999 ◽  
Vol 14 (4) ◽  
pp. 1238-1245 ◽  
Author(s):  
A. Subekti ◽  
E. M. Goldys ◽  
Melissa J. Paterson ◽  
K. Drozdowicz-Tomsia ◽  
T. L. Tansley
Keyword(s):  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Gallium Antimonide ◽  
Film Growth ◽  
Growth Parameters ◽  
Hole Concentration ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth

Metalorganic chemical vapor deposition (MOCVD) GaSb growth using trimethylgallium and trimethylantimony as a function of substrate temperature and V/III ratio was examined. These parameters were found to have a significant effect on the growth rate and surface morphology of the GaSb films. A phase diagram is used to interpret the effect of these growth parameters on the GaSb film growth. The region of single-phase growth was found to be narrow, falling between 540 and 560 °C. The optimum growth conditions for the MOCVD growth of GaSb have been determined for a TMGa flow rate of 20 sccm and a carrier gas flow of 8 l/min. The optimum substrate temperature and V/III ratio were found to be 540 °C and 0.72, respectively. In these conditions the lowest hole concentration of 5 × 1016 cm-3 and the highest room temperature mobility of 500 cm2 V-1 s-1 were achieved, accompanied by a steep, well-resolved band edge at 0.72 eV.

Direct chemical vapor deposition growth of tunable HfSiON films by a new precursor combination

2007 ◽  
Vol 22 (4) ◽  
pp. 1024-1028 ◽  
Author(s):  
Bin Xia ◽  
Matthew L. Fisher ◽  
Harold Stemper ◽  
Ashutosh Misra
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
High Growth ◽  
Single Step ◽  
Silicon Oxynitride ◽  
Chemical Vapor Deposition Growth ◽  
Nitrogen Incorporation ◽  
Pressure Chemical

Hafnium silicon oxynitride (HfSiON) films were deposited on 200-mm silicon substrates by low-pressure chemical vapor deposition (LPCVD) from a combination of trisilylamine (TSA) and tetrakis(diethylamido)hafnium(IV) (TDEAH) in the temperature range 450 to 575 °C. A highly volatile and carbon-free silicon precursor TSA was used to deposit HfSiON films for the first time. HfSiON films were deposited in a single step with no need of a post-treatment process for nitrogen incorporation. The film composition was tuned in a wide compositional range, and high growth rates were achieved. NH3 was found to have profound effects on film growth rate, metal ratio (Si% or Hf%), nitrogen incorporation, and carbon residue in the films.

Chemical vapor deposition growth and characterization of AlGaN nanowires

2015 ◽  
Vol 32 (6) ◽  
pp. 638
Author(s):  
Xingmin Cai ◽  
Xiaoqiang Su ◽  
Fan Ye ◽  
Huan Wang ◽  
Guangxing Liang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth

Epitaxial mist chemical vapor deposition growth and characterization of Cu3N films on (0001)α-Al2O3 substrates

2020 ◽  
Vol 13 (7) ◽  
pp. 075505
Author(s):  
Tomohiro Yamaguchi ◽  
Hiroki Nagai ◽  
Takanori Kiguchi ◽  
Nao Wakabayashi ◽  
Takuto Igawa ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth ◽  
Α Al2o3

Pre-Cracking and Plasma Enhanced Metalorganic Chemical Vapor Deposition Processes for Epitaxial Hg1−xCdxTe and HgTe-CdTe Superlattice Growth

1987 ◽  
Vol 102 ◽  
Author(s):  
P.-Y. Lu ◽  
L. M. Williams ◽  
C.-H. Wang ◽  
S. N. G. Chu ◽  
M. H. Ross
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Infrared Transmission ◽  
Chemical Vapor Deposition Growth ◽  
Deposition Processes ◽  
Cdznte Substrates ◽  
First Time ◽  
Metalorganic Chemical

ABSTRACTTwo low temperature metalorganic chemical vapor deposition growth techniques, the pre-cracking method and the plasma enhanced method, will be discussed. The pre-cracking technique enables one to grow high quality epitaxial Hg1−xCdxTe on CdTe or CdZnTe substrates at temperatures around 200–250°C. HgTe-CdTe superlattices with sharp interfaces have also been fabricated. Furthermore, for the first time, we have demonstrated that ternary Hg1−xCdTe compounds and HgTe-CdTe superlattices can be successfully grown by the plasma enhanced process at temperatures as low as 135 to 150°C. Material properties such as surface morphology, infrared transmission, Hall mobility, and interface sharpness will be presented.

Sign in / Sign up

Export Citation Format

Share Document