Quality control of epitaxial LiCoO2 thin films grown by pulsed laser deposition

Thin films of c-axis-oriented LiCoO2 were epitaxially grown by pulsed laser deposition (PLD). The ablation laser conditions greatly affect the crystal quality of the epitaxial LiCoO2 thin films. In addition, high-quality LiCoO2 thin films were found to grow without any impurity phases under relatively low oxygen partial pressure, although high pressure had been often selected to suppress the formation of Co3O4 with a lower valence state as an impurity. This result clearly indicates that the ablation laser conditions are an essential growth parameter, and that composition control is indispensable to grow high-quality complex compound thin films by PLD.

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Pulsed Laser Deposition of High-Quality Manganite Thin Films at Low Background Pressures with in-situ Reflection High Energy Electron Diffraction

ECS Transactions ◽

10.1149/1.2357097 ◽

2019 ◽

Vol 3 (9) ◽

pp. 55-63 ◽

Cited By ~ 1

Author(s):

Antonello Tebano ◽

Carmela Aruta ◽

Pier Gianni Medaglia ◽

Giuseppe Balestrino ◽

Norberto G. Boggio ◽

...

Keyword(s):

Thin Films ◽

Electron Diffraction ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

High Energy ◽

Laser Deposition ◽

High Energy Electron ◽

High Quality ◽

Low Background

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Low-temperature growth of high-quality indium tin oxide thin films by ultraviolet-assisted pulsed laser deposition

10.1117/12.432854 ◽

2001 ◽

Author(s):

Valentin Craciun ◽

Doina Craciun ◽

Z. Chen ◽

J. Hwang ◽

Rajiv K. Singh

Keyword(s):

Thin Films ◽

Low Temperature ◽

Pulsed Laser Deposition ◽

Tin Oxide ◽

Indium Tin Oxide ◽

Pulsed Laser ◽

Laser Deposition ◽

High Quality ◽

Temperature Growth ◽

Low Temperature Growth

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Pulsed laser deposition in a chemically reactive environment: application to the synthesis and deposition of high quality thin films

17th Congress of the International Commission for Optics: Optics for Science and New Technology ◽

10.1117/12.2298950 ◽

1996 ◽

Author(s):

I. N. Mihailescu

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

High Quality

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Epitaxial growth and characterization of high quality Bi2O2Se thin films on SrTiO3 substrates by pulsed laser deposition

Nanotechnology ◽

10.1088/1361-6528/ab6686 ◽

2020 ◽

Vol 31 (16) ◽

pp. 165704 ◽

Cited By ~ 4

Author(s):

Yekai Song ◽

Zhuojun Li ◽

Hui Li ◽

Shujie Tang ◽

Gang Mu ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Epitaxial Growth ◽

Pulsed Laser ◽

Laser Deposition ◽

High Quality

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Pulsed Laser Deposition and Characterization of InZnO Alloyed Thin Film

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.368-372.308 ◽

2008 ◽

Vol 368-372 ◽

pp. 308-311

Author(s):

F.K. Shan ◽

G.X. Liu ◽

Byoung Chul Shin ◽

Won Jae Lee ◽

W.T. Oh

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Atomic Ratio ◽

Laser Deposition ◽

Morphological Properties ◽

High Quality ◽

Atomic Force ◽

Different Temperatures ◽

Zno Powder

High-quality In2O3 powder and ZnO powder had been used to make the ceramic target and the atomic ratio of 1 to 1 of indium and zinc had been prepared in this study. The alloyed thin films had been deposited on sapphire (001) substrates at different temperatures (100–600°C) by using pulsed laser deposition (PLD) technique. An x-ray diffractometer and an atomic force microscope were used to investigate the structural and morphological properties of the alloyed thin films. It was observed that the alloyed thin films deposited at the temperatures lower than 300°C were amorphous, and the alloyed thin films deposited at high temperatures were crystallized. A spectrophotometer was used to investigate the transmittances of the alloyed thin films. It was found that the alloyed thin films were of high quality. The band gap energies of the alloys were calculated by linear fitting the sharp absorption edges of the transmittance spectra. The Hall measurements were also carried out to identify the electrical properties of the thin films.

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