Elastic anisotropy of Cu and its impact on stress management for 3D IC: Nanoindentation and TCAD simulation study

2011 ◽  
Vol 27 (1) ◽  
pp. 339-348 ◽  
Author(s):  
Kong Boon Yeap ◽  
Ehrenfried Zschech ◽  
Ude D. Hangen ◽  
Thomas Wyrobek ◽  
Lay Wai Kong ◽  
...  
Keyword(s):  
Stress Management ◽  
Simulation Study ◽  
Elastic Anisotropy ◽  
3D Ic ◽  
Tcad Simulation ◽  
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Abstract

A TCAD simulation study of impact of strain engineering on nanoscale strained Si NMOSFETs with a silicon–carbon alloy stressor

2009 ◽  
Vol 518 (5) ◽  
pp. 1595-1598 ◽  
Author(s):  
Shu-Tong Chang ◽  
Wei-Ching Wang ◽  
Chang-Chun Lee ◽  
Jacky Huang
Keyword(s):  
Simulation Study ◽  
Strain Engineering ◽  
Strained Si ◽  
Silicon Carbon ◽  
Tcad Simulation

Design and fabrication of Low Gain Avalanche Detectors (LGAD): a TCAD simulation study

2020 ◽  
Vol 15 (03) ◽  
pp. C03008-C03008
Author(s):  
K. Wu ◽  
M. Zhao ◽  
T. Yang ◽  
João Guimarães da Costa ◽  
Z. Liang ◽  
...  
Keyword(s):  
Simulation Study ◽  
Tcad Simulation
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