A TCAD Simulation Study of Three-Independent-Gate Field-Effect Transistors at the 10-nm Node

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3089671 ◽

2021 ◽

pp. 1-7

Author(s):

Patsy Cadareanu ◽

Pierre-Emmanuel Gaillardon

Keyword(s):

Simulation Study ◽

Field Effect ◽

Field Effect Transistors ◽

Tcad Simulation ◽

Independent Gate

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A Comprehensive Evaluation of Integrated Circuits Side-Channel Resilience Utilizing Three-Independent-Gate Silicon NanoWire Field Effect Transistors based Current Mode Logic

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems ◽

10.1109/tcad.2021.3128364 ◽

2021 ◽

pp. 1-1

Author(s):

Yanjiang Liu ◽

Jiaji He ◽

Haocheng Ma ◽

Tongzhou Qu ◽

Zibin Dai

Keyword(s):

Integrated Circuits ◽

Field Effect ◽

Comprehensive Evaluation ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Current Mode ◽

Side Channel ◽

Current Mode Logic ◽

Independent Gate

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Corrections to “a three-dimensional simulation study of the performance of carbon nanotube field-effect transistors with doped reservoirs and realistic geometry” [Aug 06 1782-1788]

IEEE Transactions on Electron Devices ◽

10.1109/ted.2008.917329 ◽

2008 ◽

Vol 55 (4) ◽

pp. 1094-1095 ◽

Author(s):

Gianluca Fiori ◽

Giuseppe Iannaccone ◽

Gerhard Klimeck

Keyword(s):

Carbon Nanotube ◽

Simulation Study ◽

Field Effect ◽

Field Effect Transistors ◽

Three Dimensional ◽

Dimensional Simulation ◽

Realistic Geometry

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A Predictive Process Design Kit for Three-Independent-Gate Field-Effect Transistors

IFIP Advances in Information and Communication Technology - VLSI-SoC: New Technology Enabler ◽

10.1007/978-3-030-53273-4_14 ◽

2020 ◽

pp. 307-322

Author(s):

Patsy Cadareanu ◽

Ganesh Gore ◽

Edouard Giacomin ◽

Pierre-Emmanuel Gaillardon

Keyword(s):

Process Design ◽

Field Effect ◽

Field Effect Transistors ◽

Predictive Process ◽

Independent Gate

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TCAD simulation study of independent gate junctionless FET-based flash memory

2012 International Conference on Computing, Electronics and Electrical Technologies (ICCEET) ◽

10.1109/icceet.2012.6203927 ◽

2012 ◽

Author(s):

R. Srinivasan ◽

R. Ambika

Keyword(s):

Simulation Study ◽

Flash Memory ◽

Tcad Simulation ◽

Independent Gate

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Improved performance of sub-10-nm band-to-band tunneling n-i-n graphene nanoribbon field-effect transistors using underlap engineering: A quantum simulation study

Journal of Physics and Chemistry of Solids ◽

10.1016/j.jpcs.2021.110312 ◽

2021 ◽

pp. 110312

Author(s):

Khalil Tamersit ◽

Zeinab Ramezani ◽

I.S. Amiri

Keyword(s):

Simulation Study ◽

Field Effect ◽

Field Effect Transistors ◽

Quantum Simulation ◽

Graphene Nanoribbon ◽

Band To Band Tunneling ◽

Improved Performance

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Detailed simulation study of embedded SiGe and Si:C source/drain stressors in nanoscaled silicon on insulator metal oxide semiconductor field effect transistors

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3258631 ◽

2010 ◽

Vol 28 (1) ◽

pp. C1G12-C1G17 ◽

Author(s):

Stefan Flachowsky ◽

Ralf Illgen ◽

Tom Herrmann ◽

Wilfried Klix ◽

Roland Stenzel ◽

...

Keyword(s):

Metal Oxide ◽

Simulation Study ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Detailed Simulation

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Transition metal dichalcogenide MoS 2 field-effect transistors for analog circuits: A simulation study

AEU - International Journal of Electronics and Communications ◽

10.1016/j.aeue.2018.02.025 ◽

2018 ◽

Vol 88 ◽

pp. 110-119 ◽

Author(s):

Baolin Wei ◽

Chao Lu

Keyword(s):

Transition Metal ◽

Simulation Study ◽

Analog Circuits ◽

Field Effect ◽

Field Effect Transistors ◽

Transition Metal Dichalcogenide

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(Invited) Simulation Study of High Voltage Vertical GaN Nanowire Field Effect Transistors

ECS Meeting Abstracts ◽

10.1149/ma2017-02/31/1320 ◽

2017 ◽

Keyword(s):

High Voltage ◽

Simulation Study ◽

Field Effect ◽

Field Effect Transistors ◽

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TCAD Simulation Study of Source and Gate Material-Engineered Double Gate Tunnel Field Effect Transistor

10.1109/phdedits53295.2021.9649483 ◽

2021 ◽

Author(s):

G H Nayana ◽

Sanjeev Sharma

Keyword(s):

Simulation Study ◽

Field Effect ◽

Field Effect Transistor ◽

Double Gate ◽

Effect Transistor ◽

Tunnel Field Effect Transistor ◽

Tcad Simulation

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Simulation study of the electron mobility in few-layer MoS2 metal–insulator-semiconductor field-effect transistors

Solid-State Electronics ◽

10.1016/j.sse.2015.07.007 ◽

2015 ◽

Vol 114 ◽

pp. 30-34 ◽

Author(s):

J.M. Gonzalez-Medina ◽

F.G. Ruiz ◽

E.G. Marin ◽

A. Godoy ◽

F. Gámiz

Keyword(s):

Simulation Study ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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