A TCAD simulation study of impact of strain engineering on nanoscale strained Si NMOSFETs with a silicon–carbon alloy stressor

Thin Solid Films ◽

10.1016/j.tsf.2009.09.078 ◽

2009 ◽

Vol 518 (5) ◽

pp. 1595-1598 ◽

Author(s):

Shu-Tong Chang ◽

Wei-Ching Wang ◽

Chang-Chun Lee ◽

Jacky Huang

Keyword(s):

Simulation Study ◽

Strain Engineering ◽

Strained Si ◽

Silicon Carbon ◽

Tcad Simulation

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2D-TCAD Simulation Study of Capture Layer and Repellent Layer of Current Filament in Trench-Gate IGBTs

10.1109/sispad54002.2021.9592570 ◽

2021 ◽

Author(s):

Takeshi Suwa

Keyword(s):

Simulation Study ◽

Current Filament ◽

Tcad Simulation

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A TCAD Simulation Study of Three-Independent-Gate Field-Effect Transistors at the 10-nm Node

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3089671 ◽

2021 ◽

pp. 1-7

Author(s):

Patsy Cadareanu ◽

Pierre-Emmanuel Gaillardon

Keyword(s):

Simulation Study ◽

Field Effect ◽

Field Effect Transistors ◽

Tcad Simulation ◽

Independent Gate

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Hydrogen storage on silicon, carbon, and silicon carbide nanotubes: A combined quantum mechanics and grand canonical Monte Carlo simulation study

International Journal of Hydrogen Energy ◽

10.1016/j.ijhydene.2013.11.037 ◽

2014 ◽

Vol 39 (4) ◽

pp. 1719-1731 ◽

Author(s):

S.J. Mahdizadeh ◽

E.K. Goharshadi

Keyword(s):

Monte Carlo Simulation ◽

Silicon Carbide ◽

Monte Carlo ◽

Quantum Mechanics ◽

Simulation Study ◽

Grand Canonical Monte Carlo ◽

Monte Carlo Simulation Study ◽

Silicon Carbide Nanotubes ◽

Silicon Carbon ◽

Grand Canonical

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TCAD simulation of hydrogenated amorphous silicon-carbon/microcrystalline-silicon/hydrogenated amorphous silicon-germanium PIN solar cells

Thin Solid Films ◽

10.1016/j.tsf.2009.10.100 ◽

2010 ◽

Vol 518 (6) ◽

pp. S250-S254 ◽

Author(s):

S.T. Chang ◽

M. Tang ◽

R.Y. He ◽

W.-C. Wang ◽

Z. Pei ◽

...

Keyword(s):

Solar Cells ◽

Amorphous Silicon ◽

Silicon Germanium ◽

Hydrogenated Amorphous Silicon ◽

Microcrystalline Silicon ◽

Silicon Carbon ◽

Tcad Simulation ◽

Amorphous Silicon Germanium ◽

Hydrogenated Amorphous

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TCAD simulation study of independent gate junctionless FET-based flash memory

2012 International Conference on Computing, Electronics and Electrical Technologies (ICCEET) ◽

10.1109/icceet.2012.6203927 ◽

2012 ◽

Author(s):

R. Srinivasan ◽

R. Ambika

Keyword(s):

Simulation Study ◽

Flash Memory ◽

Tcad Simulation ◽

Independent Gate

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TCAD simulation study of two bit storage flash memory using conventional FinFET and junctionless FET

2012 IEEE International Conference on Advanced Communication Control and Computing Technologies (ICACCCT) ◽

10.1109/icaccct.2012.6322909 ◽

2012 ◽

Author(s):

R. Srinivasan ◽

R. Ambika

Keyword(s):

Simulation Study ◽

Flash Memory ◽

Tcad Simulation

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Elastic anisotropy of Cu and its impact on stress management for 3D IC: Nanoindentation and TCAD simulation study

Journal of Materials Research ◽

10.1557/jmr.2011.323 ◽

2011 ◽

Vol 27 (1) ◽

pp. 339-348 ◽

Author(s):

Kong Boon Yeap ◽

Ehrenfried Zschech ◽

Ude D. Hangen ◽

Thomas Wyrobek ◽

Lay Wai Kong ◽

...

Keyword(s):

Stress Management ◽

Simulation Study ◽

Elastic Anisotropy ◽

3D Ic ◽

Tcad Simulation ◽

Abstract

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Process-strained Si (PSS) CMOS technology featuring 3D strain engineering

IEEE International Electron Devices Meeting 2003 ◽

10.1109/iedm.2003.1269169 ◽

2004 ◽

Author(s):

C.-H. Ge ◽

C.-C. Lin ◽

C.-H. Ko ◽

C.-C. Huang ◽

Y.-C. Huang ◽

...

Keyword(s):

Cmos Technology ◽

Strain Engineering ◽

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TCAD Simulation Study of Source and Gate Material-Engineered Double Gate Tunnel Field Effect Transistor

10.1109/phdedits53295.2021.9649483 ◽

2021 ◽

Author(s):

G H Nayana ◽

Sanjeev Sharma

Keyword(s):

Simulation Study ◽

Field Effect ◽

Field Effect Transistor ◽

Double Gate ◽

Effect Transistor ◽

Tunnel Field Effect Transistor ◽

Tcad Simulation

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Strained-Si heterostructure field effect devices: Strain-engineering in CMOS technology

2007 International Workshop on Physics of Semiconductor Devices ◽

10.1109/iwpsd.2007.4472453 ◽

2007 ◽

Author(s):

C. K. Maiti

Keyword(s):

Field Effect ◽

Cmos Technology ◽

Strain Engineering ◽

Strained Si ◽

Field Effect Devices

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